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5961-01-545-0497
20 Products
SA10438
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015450497
NSN
5961-01-545-0497
SA10438
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015450497
NSN
5961-01-545-0497
MFG
D W S INC
Description
CRITICALITY CODE JUSTIFICATION: AGAV
III END ITEM IDENTIFICATION: MV-22 AIRCRAFT
SPECIAL FEATURES: INAVY - RECTIFIER; SCREENED RECTIFIER; DIODES FABRICATED UTILIZING HIGH TEMPERATURE METALLURGICAL BONDING BETWEEN BOTH SIDES OF SILICONE DIE AND TERMINAL PINS; DIODES HERMETICALLY SEALED; TERMINAL FINISH SHALL BE SOLDERABLE
Related Searches:
61050
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961015450651
NSN
5961-01-545-0651
MFG
EXCELTEC INTL CORP
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SILICON CONTROLLED RECTIFIER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: THREADED STUD
Related Searches:
N105PH08
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961015450651
NSN
5961-01-545-0651
N105PH08
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961015450651
NSN
5961-01-545-0651
MFG
IXYS LONG BEACH INC.
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SILICON CONTROLLED RECTIFIER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: THREADED STUD
Related Searches:
5082-3654
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015450821
NSN
5961-01-545-0821
MFG
HEWLETT PACKARD CO
Description
CAPACITANCE RATING IN PICOFARADS: 0.3 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
III END ITEM IDENTIFICATION: NIMITZ CLASS CVN R-2199A/SPS-49(V), RECEIVER, RADAR
III PART NAME ASSIGNED BY CONTROLLING AGENCY: PIN DIODE FOR RF SWITCHING AND ATTENUATING
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: 15
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.064 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS NOMINAL FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LEAD FINISH IS 95-5 TIN-LEAD; LEADS ARE RESTRICTED SO THAT THE BEND STARTS AT LEAST 1/16 IN. FROM THE GLASS BODY; EFFECTIVE CARRIER LIFETIME: 100 NS (MIN); MAX. RESIDUAL SERIES RESISTANCE: 15 OHMS; HIGH RESISTANCE LIMIT: 1100-1660 OHMS; LOW RESISTANCE
TERMINAL CIRCLE DIAMETER: 0.4 MILLIMETERS NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
~1: LIMIT: 10-24 OHMS; MAX. SOLDERING TEMP: 250 DEG C FOR 5 SEC
Related Searches:
855489-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015450821
NSN
5961-01-545-0821
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CAPACITANCE RATING IN PICOFARADS: 0.3 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
III END ITEM IDENTIFICATION: NIMITZ CLASS CVN R-2199A/SPS-49(V), RECEIVER, RADAR
III PART NAME ASSIGNED BY CONTROLLING AGENCY: PIN DIODE FOR RF SWITCHING AND ATTENUATING
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: 15
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.064 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS NOMINAL FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LEAD FINISH IS 95-5 TIN-LEAD; LEADS ARE RESTRICTED SO THAT THE BEND STARTS AT LEAST 1/16 IN. FROM THE GLASS BODY; EFFECTIVE CARRIER LIFETIME: 100 NS (MIN); MAX. RESIDUAL SERIES RESISTANCE: 15 OHMS; HIGH RESISTANCE LIMIT: 1100-1660 OHMS; LOW RESISTANCE
TERMINAL CIRCLE DIAMETER: 0.4 MILLIMETERS NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
~1: LIMIT: 10-24 OHMS; MAX. SOLDERING TEMP: 250 DEG C FOR 5 SEC
Related Searches:
M5X3115
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015450821
NSN
5961-01-545-0821
MFG
AEROFLEX / METELICS INC.
Description
CAPACITANCE RATING IN PICOFARADS: 0.3 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
III END ITEM IDENTIFICATION: NIMITZ CLASS CVN R-2199A/SPS-49(V), RECEIVER, RADAR
III PART NAME ASSIGNED BY CONTROLLING AGENCY: PIN DIODE FOR RF SWITCHING AND ATTENUATING
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: 15
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.064 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS NOMINAL FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LEAD FINISH IS 95-5 TIN-LEAD; LEADS ARE RESTRICTED SO THAT THE BEND STARTS AT LEAST 1/16 IN. FROM THE GLASS BODY; EFFECTIVE CARRIER LIFETIME: 100 NS (MIN); MAX. RESIDUAL SERIES RESISTANCE: 15 OHMS; HIGH RESISTANCE LIMIT: 1100-1660 OHMS; LOW RESISTANCE
TERMINAL CIRCLE DIAMETER: 0.4 MILLIMETERS NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
~1: LIMIT: 10-24 OHMS; MAX. SOLDERING TEMP: 250 DEG C FOR 5 SEC
Related Searches:
142-4452
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015450939
NSN
5961-01-545-0939
142-4452
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015450939
NSN
5961-01-545-0939
MFG
CATERPILLAR INC. DBA CATERPILLAR DIV GOVERNMENTAL AND DEFENSE PRODUCTS
Description
III END ITEM IDENTIFICATION: CATERPILLAR MULTIPLE ENGINE MODELS
Related Searches:
A26853
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015451001
NSN
5961-01-545-1001
MFG
MBDA UK LTD
Description
CURRENT RATING PER CHARACTERISTIC: 38.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4104C1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JANTX1N4104C1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015451001
NSN
5961-01-545-1001
JANTX1N4104C1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015451001
NSN
5961-01-545-1001
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 38.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4104C1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
61060
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015451564
NSN
5961-01-545-1564
MFG
SEVERN TRENT DENORA LLC
Description
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL LENGTH: 5.110 INCHES NOMINAL
THREAD QUANTITY PER INCH: 24
THREAD SERIES DESIGNATOR: UNF
Related Searches:
A180M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015451564
NSN
5961-01-545-1564
MFG
POWEREX INC
Description
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL LENGTH: 5.110 INCHES NOMINAL
THREAD QUANTITY PER INCH: 24
THREAD SERIES DESIGNATOR: UNF
Related Searches:
925434-9B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015452333
NSN
5961-01-545-2333
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: PROCESSOR, RADAR TAR
Related Searches:
SA 10713
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015452333
NSN
5961-01-545-2333
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: PROCESSOR, RADAR TAR
Related Searches:
SA10713
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015452333
NSN
5961-01-545-2333
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: PROCESSOR, RADAR TAR
Related Searches:
SEN-B-315-9B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015452333
NSN
5961-01-545-2333
SEN-B-315-9B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015452333
NSN
5961-01-545-2333
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: PROCESSOR, RADAR TAR
Related Searches:
SCPND5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015452411
NSN
5961-01-545-2411
MFG
SEMTECH CORPORATION
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: HIGH VOLTAGE RECOVERY DOUPLER
SPECIAL FEATURES: 5000 V TO 15000 V; LENGTH 5.53
Related Searches:
49-9316-000
TRANSISTOR
NSN, MFG P/N
5961015453096
NSN
5961-01-545-3096
MFG
PRIME TECHNOLOGY LLC
Description
III END ITEM IDENTIFICATION: PANEL, IND TANK LVL
III PART NAME ASSIGNED BY CONTROLLING AGENCY: 250 VOLT TL 39
Related Searches:
JANTX1N829UR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015455635
NSN
5961-01-545-5635
JANTX1N829UR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015455635
NSN
5961-01-545-5635
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N829UR-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/159
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.9 MINIMUM NOMINAL REGULATOR VOLTAGE AND 6.5 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
12993554
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015456286
NSN
5961-01-545-6286
12993554
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015456286
NSN
5961-01-545-6286
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
III END ITEM IDENTIFICATION: ELECTRONIC UNIT FIRE CONTROL COMPUTER M1A2 ABRAMS FOV NSN 1220-01-531-5874
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE DIODE ARRAY
OVERALL LENGTH: 0.750 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
SPECIAL FEATURES: SEMICONDUCTOR DEVICE DIODE ARRAY WORKING PEAK REVERSE VOLTAGE 75 V, DC FORWARD CURRENT 400 MA, PEAK FORWARD SURGE CURRENT 2.0A, POWER DISSIPATAION PER JUNCTION AT 25 DEGREES C 500 MW
Related Searches:
FSA2501P
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015456286
NSN
5961-01-545-6286
FSA2501P
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015456286
NSN
5961-01-545-6286
MFG
AMERICAN MICROSEMICONDUCTOR INC
Description
III END ITEM IDENTIFICATION: ELECTRONIC UNIT FIRE CONTROL COMPUTER M1A2 ABRAMS FOV NSN 1220-01-531-5874
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE DIODE ARRAY
OVERALL LENGTH: 0.750 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
SPECIAL FEATURES: SEMICONDUCTOR DEVICE DIODE ARRAY WORKING PEAK REVERSE VOLTAGE 75 V, DC FORWARD CURRENT 400 MA, PEAK FORWARD SURGE CURRENT 2.0A, POWER DISSIPATAION PER JUNCTION AT 25 DEGREES C 500 MW
