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5961-01-422-2875
20 Products
BYV28-150
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014222875
NSN
5961-01-422-2875
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
5322 130 80406
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014222876
NSN
5961-01-422-2876
5322 130 80406
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014222876
NSN
5961-01-422-2876
MFG
PHILIPS ELECTRONICS NEDERLAND BV
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
918941
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014222876
NSN
5961-01-422-2876
MFG
FLUKE CORPORATION
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
BZX84-C6V8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014222876
NSN
5961-01-422-2876
BZX84-C6V8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014222876
NSN
5961-01-422-2876
MFG
PHILIPS COMPONENTS
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
BZX84C6V8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014222876
NSN
5961-01-422-2876
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
918383
TRANSISTOR
NSN, MFG P/N
5961014222877
NSN
5961-01-422-2877
MFG
FLUKE CORPORATION
Description
TRANSISTOR
Related Searches:
BC858
TRANSISTOR
NSN, MFG P/N
5961014222877
NSN
5961-01-422-2877
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
TRANSISTOR
Related Searches:
BC858B
TRANSISTOR
NSN, MFG P/N
5961014222877
NSN
5961-01-422-2877
MFG
BC COMPONENTS
Description
TRANSISTOR
Related Searches:
5322 130 32835
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014222878
NSN
5961-01-422-2878
5322 130 32835
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014222878
NSN
5961-01-422-2878
MFG
PHILIPS ELECTRONICS NEDERLAND BV
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
861182
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014222878
NSN
5961-01-422-2878
MFG
FLUKE CORPORATION
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
BZX84-C5V1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014222878
NSN
5961-01-422-2878
BZX84-C5V1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014222878
NSN
5961-01-422-2878
MFG
PHILIPS SEMICONDUCTORS INC
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
BZX84C5V1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014222878
NSN
5961-01-422-2878
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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7548629P0001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014222926
NSN
5961-01-422-2926
7548629P0001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014222926
NSN
5961-01-422-2926
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
94-7313
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014222926
NSN
5961-01-422-2926
94-7313
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014222926
NSN
5961-01-422-2926
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
1345-613
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014222940
NSN
5961-01-422-2940
1345-613
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014222940
NSN
5961-01-422-2940
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
DESIGN CONTROL REFERENCE: 7555832P0613
III NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
MANUFACTURERS CODE: 99971
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEMS
THE MANUFACTURERS DATA:
Related Searches:
7555832P0613
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014222940
NSN
5961-01-422-2940
7555832P0613
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014222940
NSN
5961-01-422-2940
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 7555832P0613
III NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
MANUFACTURERS CODE: 99971
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEMS
THE MANUFACTURERS DATA:
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152-5083-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014222964
NSN
5961-01-422-2964
152-5083-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014222964
NSN
5961-01-422-2964
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
M4X1051-0805
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014222964
NSN
5961-01-422-2964
M4X1051-0805
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014222964
NSN
5961-01-422-2964
MFG
AEROFLEX / METELICS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MA4P7006B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014223794
NSN
5961-01-422-3794
MFG
M/A-COM INC. DIV BURLINGTON SEMICONDUCTOR OPERATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.190 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS NOMINAL OFF-STATE POWER DISSIPATION
TERMINAL CIRCLE DIAMETER: 0.029 INCHES MAXIMUM
TERMINAL LENGTH: 0.975 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
VA-70-0473-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014223794
NSN
5961-01-422-3794
VA-70-0473-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014223794
NSN
5961-01-422-3794
MFG
SELEX GALILEO LTD
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.190 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS NOMINAL OFF-STATE POWER DISSIPATION
TERMINAL CIRCLE DIAMETER: 0.029 INCHES MAXIMUM
TERMINAL LENGTH: 0.975 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, DC
