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5961-01-477-5499
20 Products
T04MSC1400MH0
TRANSISTOR
NSN, MFG P/N
5961014775499
NSN
5961-01-477-5499
MFG
INDRA SISTEMAS S.A.
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: RADAR SYSTEM
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 250.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.900 INCHES NOMINAL
OVERALL WIDTH: 0.386 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 KILOWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 2 UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM COLLECTOR SUPPLY VOLTAGE
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MSC81400M
TRANSISTOR
NSN, MFG P/N
5961014775499
NSN
5961-01-477-5499
MFG
STMICROELECTRONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: RADAR SYSTEM
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 250.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.900 INCHES NOMINAL
OVERALL WIDTH: 0.386 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 KILOWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 2 UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM COLLECTOR SUPPLY VOLTAGE
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GBPC1504
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014776518
NSN
5961-01-477-6518
GBPC1504
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014776518
NSN
5961-01-477-6518
MFG
GENERAL SEMICONDUCTOR INC
Description
MATERIAL: PLASTIC EPOXY
OVERALL HEIGHT: 0.840 INCHES NOMINAL
OVERALL LENGTH: 1.135 INCHES NOMINAL
OVERALL WIDTH: 1.135 INCHES NOMINAL
Related Searches:
VZ3TM2250M16
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014776737
NSN
5961-01-477-6737
VZ3TM2250M16
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014776737
NSN
5961-01-477-6737
MFG
SCHNEIDER ELECTRIC USA INC.
Description
DESIGN CONTROL REFERENCE: VZ3TM2250M16
III END ITEM IDENTIFICATION: CONTROLLER,HPU-CRANE, P/N D1502100 ABOARD 225 FT "B" WLB COAST GUARD VESSELS
MANUFACTURERS CODE: 56365
SPECIAL FEATURES: MODULE,SCR
THE MANUFACTURERS DATA:
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ISOPAC0123
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014776883
NSN
5961-01-477-6883
ISOPAC0123
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014776883
NSN
5961-01-477-6883
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 9.00 AMPERES NOMINAL FORWARD CURRENT, DC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: G45
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.8 NOMINAL FORWARD VOLTAGE, DC AND 500.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 500.0 NOMINAL WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
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VSD422001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014776883
NSN
5961-01-477-6883
MFG
E2V TECHNOLOGIES UK LIMITED
Description
CURRENT RATING PER CHARACTERISTIC: 9.00 AMPERES NOMINAL FORWARD CURRENT, DC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: G45
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.8 NOMINAL FORWARD VOLTAGE, DC AND 500.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 500.0 NOMINAL WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
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UES1104SM
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014777995
NSN
5961-01-477-7995
MFG
MICRO USPD INC
Description
SEMICONDUCTOR DEVICE,DIODE
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1N6132A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014777999
NSN
5961-01-477-7999
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
SEMICONDUCTOR DEVICE,DIODE
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6356000190
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014778425
NSN
5961-01-477-8425
6356000190
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014778425
NSN
5961-01-477-8425
MFG
GROVE U.S. L.L.C
Description
III END ITEM IDENTIFICATION: DIRECT VENDOR DELIVERY (DVD), ATEC AT422-T, NSN: 3810-01-448-2619, CAGE 12361, PART NUMBER 1-140-0-00513, TM5-3810-307-24P, CONTRACT DAAE07-97-D-X001
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20106600
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014779047
NSN
5961-01-477-9047
MFG
BAE SYSTEMS DEFENCE SYSTEMS LTD
Description
CAPACITANCE RATING IN PICOFARADS: 10.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.35 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.55 MILLIMETERS MINIMUM AND 3.85 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.40 MILLIMETERS MINIMUM AND 1.70 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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BAT43W
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014779047
NSN
5961-01-477-9047
MFG
DIODES INC
Description
CAPACITANCE RATING IN PICOFARADS: 10.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.35 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.55 MILLIMETERS MINIMUM AND 3.85 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.40 MILLIMETERS MINIMUM AND 1.70 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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141505PC78
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014779142
NSN
5961-01-477-9142
141505PC78
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014779142
NSN
5961-01-477-9142
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N2818RB
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
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JANTX1N2818RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014779142
NSN
5961-01-477-9142
JANTX1N2818RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014779142
NSN
5961-01-477-9142
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N2818RB
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
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22200 ITEM NO. 17
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014779479
NSN
5961-01-477-9479
22200 ITEM NO. 17
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014779479
NSN
5961-01-477-9479
MFG
MORPAC INDUSTRIES INC. DIV ACTUATOR
Description
III END ITEM IDENTIFICATION: E/IFSCM NAVY EQUIPMENT
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37394-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014779720
NSN
5961-01-477-9720
37394-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014779720
NSN
5961-01-477-9720
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
III END ITEM IDENTIFICATION: ROTOR BLADE,DE ICE SUPPORT EQUIPMENT FOR H60,MODEL DCHS
MAJOR COMPONENTS: DIODE 10, PRINTED WIRING BOARD 1
Related Searches:
2SC5129
TRANSISTOR
NSN, MFG P/N
5961014779809
NSN
5961-01-477-9809
MFG
TOSHIBA AMERICA INC ELECTRONICS COMPONENTS DIV
Description
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-247VAR
MOUNTING METHOD: UNTHREADED HOLE
SEMICONDUCTOR MATERIAL: SILICON
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532014000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014780173
NSN
5961-01-478-0173
MFG
BOONTON ELECTRONICS CORPORATION DBA ALLTEL
Description
III END ITEM IDENTIFICATION: USED ON MODEL 4220 POWER METER
Related Searches:
2931120-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014781750
NSN
5961-01-478-1750
MFG
RAYTHEON COMPANY
Description
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: END TERMINALS SILVER
OVERALL DIAMETER: 0.070 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
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1N4938UR-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014781755
NSN
5961-01-478-1755
1N4938UR-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014781755
NSN
5961-01-478-1755
MFG
MICROSEMI CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: AGAV
III END ITEM IDENTIFICATION: FIGHTER AIRCRAFT F18 E/F
Related Searches:
3133300-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014781755
NSN
5961-01-478-1755
3133300-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014781755
NSN
5961-01-478-1755
MFG
RAYTHEON COMPANY
Description
CRITICALITY CODE JUSTIFICATION: AGAV
III END ITEM IDENTIFICATION: FIGHTER AIRCRAFT F18 E/F
