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5961-01-409-1939
20 Products
BZV85C10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014091939
NSN
5961-01-409-1939
MFG
NORTH AMERICAN PHILIPS CORP PHILIPS COMPONENTS DISCRETE PRODUCTS DIV
Description
III END ITEM IDENTIFICATION: 6625-01-363-6212, E/I CAGE 34280
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 4.8 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2000.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
8878800004-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014092673
NSN
5961-01-409-2673
8878800004-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014092673
NSN
5961-01-409-2673
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: APN232,RDR TRANSMITTER
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.005 INCHES MAXIMUM
OVERALL LENGTH: 0.020 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, WITH SPECIFIED VOLTAGE BETWEEN BASE AND EMITTER
Related Searches:
CKV2010-30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014092673
NSN
5961-01-409-2673
CKV2010-30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014092673
NSN
5961-01-409-2673
MFG
SKYWORKS SOLUTIONS INC.
Description
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: APN232,RDR TRANSMITTER
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.005 INCHES MAXIMUM
OVERALL LENGTH: 0.020 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, WITH SPECIFIED VOLTAGE BETWEEN BASE AND EMITTER
Related Searches:
8878800006-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014092678
NSN
5961-01-409-2678
8878800006-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014092678
NSN
5961-01-409-2678
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
CAPACITANCE RATING IN PICOFARADS: 0.15 MAXIMUM
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: APN232,RDR TRANSMITTER
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.006 INCHES MAXIMUM
OVERALL LENGTH: 0.016 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
8878800003-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014092680
NSN
5961-01-409-2680
8878800003-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014092680
NSN
5961-01-409-2680
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: APN232,RDR TRANSMITTER
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 37.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 37.0 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
232267-1
TRANSISTOR
NSN, MFG P/N
5961014102818
NSN
5961-01-410-2818
MFG
CUBIC DEFENSE APPLICATIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.030 INCHES NOMINAL
OVERALL LENGTH: 0.495 INCHES NOMINAL
OVERALL WIDTH: 0.495 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 94987-232267 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 1.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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HRT-41410TX
TRANSISTOR
NSN, MFG P/N
5961014102818
NSN
5961-01-410-2818
MFG
AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.030 INCHES NOMINAL
OVERALL LENGTH: 0.495 INCHES NOMINAL
OVERALL WIDTH: 0.495 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 94987-232267 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 1.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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CDLL5234B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014102824
NSN
5961-01-410-2824
MFG
COMPENSATED DEVICES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
D235A128-7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014102824
NSN
5961-01-410-2824
D235A128-7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014102824
NSN
5961-01-410-2824
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MLL5234B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014102824
NSN
5961-01-410-2824
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
40RBF100W30
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014102826
NSN
5961-01-410-2826
40RBF100W30
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014102826
NSN
5961-01-410-2826
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 63.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 40.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
III END ITEM IDENTIFICATION: AC-130H, MC-130H, EC-130E, HC-130 AIRCRAFT.
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-65
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 1.772 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.676 INCHES MINIMUM AND 0.684 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 20418-ES4631 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1100.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MAXI
Related Searches:
68-7034
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014102826
NSN
5961-01-410-2826
68-7034
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014102826
NSN
5961-01-410-2826
MFG
DRS SUSTAINMENT SYSTEMS INC. DIV DRS SUSTAINMENT SYSTEMS INC. USE CAGE CODE 98255 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 63.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 40.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
III END ITEM IDENTIFICATION: AC-130H, MC-130H, EC-130E, HC-130 AIRCRAFT.
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-65
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 1.772 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.676 INCHES MINIMUM AND 0.684 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 20418-ES4631 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1100.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MAXI
Related Searches:
45619445
TRANSISTOR
NSN, MFG P/N
5961014102856
NSN
5961-01-410-2856
MFG
THALES UNDERWATER SYSTEMS S.A.S
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
III END ITEM IDENTIFICATION: 6625-01-363-6212 MULTIMETER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-71
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -2.5 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE
Related Searches:
91464446
TRANSISTOR
NSN, MFG P/N
5961014102856
NSN
5961-01-410-2856
MFG
THALES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
III END ITEM IDENTIFICATION: 6625-01-363-6212 MULTIMETER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-71
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -2.5 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE
Related Searches:
U401
TRANSISTOR
NSN, MFG P/N
5961014102856
NSN
5961-01-410-2856
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
III END ITEM IDENTIFICATION: 6625-01-363-6212 MULTIMETER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-71
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -2.5 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE
Related Searches:
0191A0109
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014102865
NSN
5961-01-410-2865
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
60KS200C/H3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014102865
NSN
5961-01-410-2865
60KS200C/H3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014102865
NSN
5961-01-410-2865
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
J509
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014102866
NSN
5961-01-410-2866
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
III END ITEM IDENTIFICATION: 6625-01-363-6212 E/I CAGE 34280
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
1N4448
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014102910
NSN
5961-01-410-2910
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CAPACITANCE RATING IN PICOFARADS: 4.0 NOMINAL
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 30003-2037AS755 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
2037AS755-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014102910
NSN
5961-01-410-2910
2037AS755-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014102910
NSN
5961-01-410-2910
MFG
NAVAL AIR SYSTEMS COMMAND
Description
CAPACITANCE RATING IN PICOFARADS: 4.0 NOMINAL
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 30003-2037AS755 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 NOMINAL REVERSE VOLTAGE, PEAK
