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5961-01-351-4619
20 Products
2SC2592
TRANSISTOR
NSN, MFG P/N
5961013514619
NSN
5961-01-351-4619
MFG
PANASONIC AVIONICS CORPORATION
Description
TRANSISTOR
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2SA1112
TRANSISTOR
NSN, MFG P/N
5961013514620
NSN
5961-01-351-4620
MFG
PANASONIC AVIONICS CORPORATION
Description
TRANSISTOR
Related Searches:
2N6788
TRANSISTOR
NSN, MFG P/N
5961013514853
NSN
5961-01-351-4853
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES NOMINAL ZERO-GATE-VOLTAGE DRAIN CURRENT
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 9.4 MILLIMETERS NOMINAL
OVERALL LENGTH: 4.6 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 20.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION
TERMINAL LENGTH: 19.1 MILLIMETERS NOMINAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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99180334
TRANSISTOR
NSN, MFG P/N
5961013514853
NSN
5961-01-351-4853
MFG
THALES UNDERWATER SYSTEMS S.A.S
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES NOMINAL ZERO-GATE-VOLTAGE DRAIN CURRENT
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 9.4 MILLIMETERS NOMINAL
OVERALL LENGTH: 4.6 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 20.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION
TERMINAL LENGTH: 19.1 MILLIMETERS NOMINAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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230065
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013514854
NSN
5961-01-351-4854
MFG
WAVETEK RF PRODUCTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 4.70 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM FORWARD VOLTAGE, DC
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300526040
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013514854
NSN
5961-01-351-4854
MFG
SCHLUMBERGER TECHNOLOGIES INC AUTOMATIC TEST EQUIPMENT
Description
CURRENT RATING PER CHARACTERISTIC: 4.70 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM FORWARD VOLTAGE, DC
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J511
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013514854
NSN
5961-01-351-4854
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
CURRENT RATING PER CHARACTERISTIC: 4.70 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM FORWARD VOLTAGE, DC
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MMD-837-C11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013514855
NSN
5961-01-351-4855
MMD-837-C11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013514855
NSN
5961-01-351-4855
MFG
AEROFLEX / METELICS INC.
Description
CAPACITANCE RATING IN PICOFARADS: 0.4 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MINIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FUNCTION FOR WHICH DESIGNED: FREQUENCY MULTIPLIER
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.13 MILLIMETERS NOMINAL
OVERALL LENGTH: 0.38 MILLIMETERS NOMINAL
OVERALL WIDTH: 0.38 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MINIMUM BREAKDOWN VOLTAGE, DC
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1332974
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013514856
NSN
5961-01-351-4856
MFG
ITT INDUSTRIES INC ITT AEROSPACE COMMUNICATIONS DIV EAST
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: 5805-01-187-9399 TELEPHONE SWITCHBOARD GROUP
INCLOSURE MATERIAL: GLASS OR PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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200986-002
TRANSISTOR
NSN, MFG P/N
5961013515374
NSN
5961-01-351-5374
MFG
PHYSIO-CONTROL INC .
Description
DESIGN CONTROL REFERENCE: 200986-002
III END ITEM IDENTIFICATION: 6515-01-305-1157
III PURCHASE DESCRIPTION IDENTIFICATION: 28494-200986-00
MANUFACTURERS CODE: 28494
SPECIAL FEATURES: REPAIR PART FOR DEFIBRILLATOR/MONITOR MDL
THE MANUFACTURERS DATA:
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REPAIR PART
TRANSISTOR
NSN, MFG P/N
5961013515374
NSN
5961-01-351-5374
MFG
DEFENSE MEDICAL STANDARDIZATION BOARD
Description
DESIGN CONTROL REFERENCE: 200986-002
III END ITEM IDENTIFICATION: 6515-01-305-1157
III PURCHASE DESCRIPTION IDENTIFICATION: 28494-200986-00
MANUFACTURERS CODE: 28494
SPECIAL FEATURES: REPAIR PART FOR DEFIBRILLATOR/MONITOR MDL
THE MANUFACTURERS DATA:
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183-4214
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013515746
NSN
5961-01-351-5746
183-4214
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013515746
NSN
5961-01-351-5746
MFG
RS COMPONENTS LIMITED
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL LENGTH: 1.760 INCHES NOMINAL
OVERALL WIDTH: 0.895 INCHES MINIMUM AND 0.935 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
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300510340
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013515746
NSN
5961-01-351-5746
300510340
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013515746
NSN
5961-01-351-5746
MFG
SCHLUMBERGER TECHNOLOGIES INC AUTOMATIC TEST EQUIPMENT
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL LENGTH: 1.760 INCHES NOMINAL
OVERALL WIDTH: 0.895 INCHES MINIMUM AND 0.935 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
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GBU4B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013515746
NSN
5961-01-351-5746
GBU4B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013515746
NSN
5961-01-351-5746
MFG
GENERAL SEMICONDUCTOR INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL LENGTH: 1.760 INCHES NOMINAL
OVERALL WIDTH: 0.895 INCHES MINIMUM AND 0.935 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
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94-7149
TRANSISTOR
NSN, MFG P/N
5961013516074
NSN
5961-01-351-6074
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT OR UNIJUNCTION
MANUFACTURERS CODE: 3B150
MFR SOURCE CONTROLLING REFERENCE: G293528-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES NOMINAL
OVERALL LENGTH: 0.170 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 SOLDER STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 2.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
Related Searches:
G293528-1
TRANSISTOR
NSN, MFG P/N
5961013516074
NSN
5961-01-351-6074
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT OR UNIJUNCTION
MANUFACTURERS CODE: 3B150
MFR SOURCE CONTROLLING REFERENCE: G293528-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES NOMINAL
OVERALL LENGTH: 0.170 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 SOLDER STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 2.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
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JANTX2N6851
TRANSISTOR
NSN, MFG P/N
5961013516074
NSN
5961-01-351-6074
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT OR UNIJUNCTION
MANUFACTURERS CODE: 3B150
MFR SOURCE CONTROLLING REFERENCE: G293528-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES NOMINAL
OVERALL LENGTH: 0.170 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 SOLDER STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 2.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
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DAA3233A055-013
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013516075
NSN
5961-01-351-6075
DAA3233A055-013
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013516075
NSN
5961-01-351-6075
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV INTEGRATED SYSTEMS SECTOR
Description
III END ITEM IDENTIFICATION: PACER SPECIAL
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41787-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013516076
NSN
5961-01-351-6076
MFG
DATRON SYSTEMS INC
Description
III END ITEM IDENTIFICATION: AN/FSQ-15V
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ME700803
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013516076
NSN
5961-01-351-6076
MFG
POWEREX INC
Description
III END ITEM IDENTIFICATION: AN/FSQ-15V
