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5961-00-763-2753
20 Products
1N2989RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007632753
NSN
5961-00-763-2753
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2989RB TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
666096-232
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961007633051
NSN
5961-00-763-3051
666096-232
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961007633051
NSN
5961-00-763-3051
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
DESIGN CONTROL REFERENCE: 666096-232
MAJOR COMPONENTS: TERMINAL BOARD 1;MOUNTING POST 2;DIODES 4
MANUFACTURERS CODE: 12436
OVERALL HEIGHT: 0.687 INCHES NOMINAL
OVERALL LENGTH: 3.687 INCHES NOMINAL
OVERALL WIDTH: 1.343 INCHES NOMINAL
THE MANUFACTURERS DATA:
Related Searches:
2N3213
TRANSISTOR
NSN, MFG P/N
5961007633132
NSN
5961-00-763-3132
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.320 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 143.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE4665 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTO
Related Searches:
2N3213A
TRANSISTOR
NSN, MFG P/N
5961007633132
NSN
5961-00-763-3132
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.320 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 143.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE4665 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTO
Related Searches:
3005156-00
TRANSISTOR
NSN, MFG P/N
5961007633132
NSN
5961-00-763-3132
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.320 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 143.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE4665 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTO
Related Searches:
RT189
TRANSISTOR
NSN, MFG P/N
5961007633132
NSN
5961-00-763-3132
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.320 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 143.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE4665 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTO
Related Searches:
SS763
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007633312
NSN
5961-00-763-3312
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
DESIGN CONTROL REFERENCE: SS763
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: SH879
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
2N3214
TRANSISTOR
NSN, MFG P/N
5961007633415
NSN
5961-00-763-3415
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.320 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 14.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE4665 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-E
Related Searches:
2N3053/40053
TRANSISTOR
NSN, MFG P/N
5961007633417
NSN
5961-00-763-3417
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
51509101
TRANSISTOR
NSN, MFG P/N
5961007633417
NSN
5961-00-763-3417
MFG
SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
013-678
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007633603
NSN
5961-00-763-3603
MFG
AMPEX DATA SYSTEMS CORP COMPUTER PRODUCTS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
499-020-048
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007633603
NSN
5961-00-763-3603
499-020-048
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007633603
NSN
5961-00-763-3603
MFG
INTERSTATE ELECTRONICS CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
CD451
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007633603
NSN
5961-00-763-3603
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1510415-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007634026
NSN
5961-00-763-4026
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
DESIGN CONTROL REFERENCE: 1510415-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 56232
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DIODE MOUNTED IN A RING
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
PC4550
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007634026
NSN
5961-00-763-4026
MFG
NURAD TECHNOLOGIES INC.
Description
DESIGN CONTROL REFERENCE: 1510415-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 56232
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DIODE MOUNTED IN A RING
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
156H21
TRANSISTOR
NSN, MFG P/N
5961007634428
NSN
5961-00-763-4428
MFG
WESTINGHOUSE ELECTRIC CORP CONTROL BUSINESS UNIT
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
S2322
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961007634645
NSN
5961-00-763-4645
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TERMINAL QTY 3
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1855-0029
TRANSISTOR
NSN, MFG P/N
5961007634701
NSN
5961-00-763-4701
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.171 INCHES NOMINAL
OVERALL LENGTH: 0.187 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
PF445
TRANSISTOR
NSN, MFG P/N
5961007634701
NSN
5961-00-763-4701
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.171 INCHES NOMINAL
OVERALL LENGTH: 0.187 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
SFB4001
TRANSISTOR
NSN, MFG P/N
5961007634701
NSN
5961-00-763-4701
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.171 INCHES NOMINAL
OVERALL LENGTH: 0.187 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
