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5961-00-064-2379
20 Products
1301313&4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER GUIDANCE SYSTEMS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
353-2952-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000641424
NSN
5961-00-064-1424
353-2952-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000641424
NSN
5961-00-064-1424
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
PS6903
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000641424
NSN
5961-00-064-1424
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1N1205A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000641588
NSN
5961-00-064-1588
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N1205A TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
0C201
TRANSISTOR
NSN, MFG P/N
5961000642108
NSN
5961-00-064-2108
MFG
AMPEREX ELECTRONIC CORP
Description
TRANSISTOR
Related Searches:
472-0434-001
TRANSISTOR
NSN, MFG P/N
5961000642109
NSN
5961-00-064-2109
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM PEAK POINT CURRENT AND 200.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.300 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 18.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 4.0 M
Related Searches:
504A
TRANSISTOR
NSN, MFG P/N
5961000642109
NSN
5961-00-064-2109
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM PEAK POINT CURRENT AND 200.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.300 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 18.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 4.0 M
Related Searches:
2N1022A
TRANSISTOR
NSN, MFG P/N
5961000642209
NSN
5961-00-064-2209
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM BASE CURRENT, DC AND 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE3811 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 55.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMI
Related Searches:
074-30745-05
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642214
NSN
5961-00-064-2214
074-30745-05
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642214
NSN
5961-00-064-2214
MFG
GTE COMMUNICATION SYSTEMS CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.324 INCHES MINIMUM AND 0.410 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
1N23C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642214
NSN
5961-00-064-2214
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.324 INCHES MINIMUM AND 0.410 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
1450085-14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642325
NSN
5961-00-064-2325
1450085-14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642325
NSN
5961-00-064-2325
MFG
SENSOR AND ANTENNA SYSTEMS LANSDALE INC.
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.062 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
99-3344-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642325
NSN
5961-00-064-2325
99-3344-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642325
NSN
5961-00-064-2325
MFG
MAS COMPONENTS AND COATINGS LLC
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.062 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
UZ5840
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642325
NSN
5961-00-064-2325
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.062 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1301313-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1585242-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
MFG
ALLIED SIGNAL INC AEROSPACE EQUIPMENT SYSTEMS EATONTOWN SITE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
16100-0007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
16100-0007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
MFG
DYNALEC CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N649
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
MFG
UNION TECHNIQUE ELECTRICITE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2088156-0007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
2088156-0007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
21804-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
255254
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000642379
NSN
5961-00-064-2379
MFG
KIDDE-FENWAL INC DBA CHEMTRON KIDDE FIRE SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
