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5961-00-116-1952
20 Products
531410-1
TRANSISTOR
NSN, MFG P/N
5961001161952
NSN
5961-00-116-1952
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: 531410-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 96214
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
21117
TRANSISTOR
NSN, MFG P/N
5961001162011
NSN
5961-00-116-2011
MFG
API ELECTRONICS INC.
Description
DESIGN CONTROL REFERENCE: 2950-165
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 11871
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
2950-165
TRANSISTOR
NSN, MFG P/N
5961001162011
NSN
5961-00-116-2011
MFG
RECON/OPTICAL INC .
Description
DESIGN CONTROL REFERENCE: 2950-165
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 11871
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
2N1117
TRANSISTOR
NSN, MFG P/N
5961001162011
NSN
5961-00-116-2011
MFG
TRANSLECTRONIC INC
Description
DESIGN CONTROL REFERENCE: 2950-165
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 11871
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1261915-167
TRANSISTOR
NSN, MFG P/N
5961001162034
NSN
5961-00-116-2034
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER GUIDANCE SYSTEMS DIV
Description
TRANSISTOR
Related Searches:
NSE4769
TRANSISTOR
NSN, MFG P/N
5961001162034
NSN
5961-00-116-2034
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
TRANSISTOR
Related Searches:
STC3600
TRANSISTOR
NSN, MFG P/N
5961001162034
NSN
5961-00-116-2034
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
TRANSISTOR
Related Searches:
479-1076-007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001162046
NSN
5961-00-116-2046
479-1076-007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001162046
NSN
5961-00-116-2046
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.062 INCHES NOMINAL
OVERALL LENGTH: 0.076 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 FERRULE
Related Searches:
D5780
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001162046
NSN
5961-00-116-2046
MFG
SKYWORKS SOLUTIONS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.062 INCHES NOMINAL
OVERALL LENGTH: 0.076 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 FERRULE
Related Searches:
MA40500
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001162046
NSN
5961-00-116-2046
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.062 INCHES NOMINAL
OVERALL LENGTH: 0.076 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 FERRULE
Related Searches:
472-0940-004
TRANSISTOR
NSN, MFG P/N
5961001162061
NSN
5961-00-116-2061
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94756
MFR SOURCE CONTROLLING REFERENCE: 472-0940-004
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
SJ1500H2
TRANSISTOR
NSN, MFG P/N
5961001162061
NSN
5961-00-116-2061
MFG
FREESCALE SEMICONDUCTOR INC.
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94756
MFR SOURCE CONTROLLING REFERENCE: 472-0940-004
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
SP7299
TRANSISTOR
NSN, MFG P/N
5961001162061
NSN
5961-00-116-2061
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94756
MFR SOURCE CONTROLLING REFERENCE: 472-0940-004
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
959791-1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001162222
NSN
5961-00-116-2222
959791-1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001162222
NSN
5961-00-116-2222
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS
Description
ACCOMMODATED ITEM SECURING DEVICE TYPE: SCREW FASTENER
OVERALL DIAMETER: 0.221 INCHES NOMINAL
OVERALL HEIGHT: 0.280 INCHES NOMINAL
SURFACE TREATMENT: CADMIUM
Related Searches:
TXBP019-028
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001162222
NSN
5961-00-116-2222
TXBP019-028
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001162222
NSN
5961-00-116-2222
MFG
CTS ELECTRONIC COMPONENTS CALIFORNIA INC DBA IERC DIV CTS ELECTRONIC COMPONENTS
Description
ACCOMMODATED ITEM SECURING DEVICE TYPE: SCREW FASTENER
OVERALL DIAMETER: 0.221 INCHES NOMINAL
OVERALL HEIGHT: 0.280 INCHES NOMINAL
SURFACE TREATMENT: CADMIUM
Related Searches:
1855-0390
TRANSISTOR
NSN, MFG P/N
5961001162695
NSN
5961-00-116-2695
MFG
HEWLETT PACKARD CO
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
2N3382
TRANSISTOR
NSN, MFG P/N
5961001162695
NSN
5961-00-116-2695
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
SU707
TRANSISTOR
NSN, MFG P/N
5961001162695
NSN
5961-00-116-2695
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
23306
TRANSISTOR
NSN, MFG P/N
5961001162736
NSN
5961-00-116-2736
MFG
KLEINSCHMIDT INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 3.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.490 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
2N2565
TRANSISTOR
NSN, MFG P/N
5961001162736
NSN
5961-00-116-2736
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 3.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.490 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
