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5961-01-397-1291
20 Products
CD2221-CM2528A
TRANSISTOR
NSN, MFG P/N
5961013971291
NSN
5961-01-397-1291
MFG
RF PRODUCTS INC
Description
TRANSISTOR
Related Searches:
SB3050
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013971310
NSN
5961-01-397-1310
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
5906190
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013971500
NSN
5961-01-397-1500
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 1.35 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 50.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III PRECIOUS MATERIAL: GOLD OR SILVER
III PRECIOUS MATERIAL AND LOCATION: PLATED TERMINALS GOLD OR PLATED TERMINALS SILVER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 0.830 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 SOLDER STUD
TEST DATA DOCUMENT: 53711-5906190 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 NOMINAL NOMINAL REGULATOR VOLTAGE
Related Searches:
SA10750
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013971500
NSN
5961-01-397-1500
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CURRENT RATING PER CHARACTERISTIC: 1.35 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 50.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III PRECIOUS MATERIAL: GOLD OR SILVER
III PRECIOUS MATERIAL AND LOCATION: PLATED TERMINALS GOLD OR PLATED TERMINALS SILVER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 0.830 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 SOLDER STUD
TEST DATA DOCUMENT: 53711-5906190 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 NOMINAL NOMINAL REGULATOR VOLTAGE
Related Searches:
SEN-1164
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013971500
NSN
5961-01-397-1500
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
CURRENT RATING PER CHARACTERISTIC: 1.35 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 50.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III PRECIOUS MATERIAL: GOLD OR SILVER
III PRECIOUS MATERIAL AND LOCATION: PLATED TERMINALS GOLD OR PLATED TERMINALS SILVER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 0.830 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 SOLDER STUD
TEST DATA DOCUMENT: 53711-5906190 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 NOMINAL NOMINAL REGULATOR VOLTAGE
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UZZ9080
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013971500
NSN
5961-01-397-1500
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.35 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 50.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III PRECIOUS MATERIAL: GOLD OR SILVER
III PRECIOUS MATERIAL AND LOCATION: PLATED TERMINALS GOLD OR PLATED TERMINALS SILVER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 0.830 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 SOLDER STUD
TEST DATA DOCUMENT: 53711-5906190 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 NOMINAL NOMINAL REGULATOR VOLTAGE
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94-5622
TRANSISTOR
NSN, MFG P/N
5961013971555
NSN
5961-01-397-1555
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
TRANSISTOR
Related Searches:
G531928-1
TRANSISTOR
NSN, MFG P/N
5961013971555
NSN
5961-01-397-1555
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
TRANSISTOR
Related Searches:
G645758-1
TRANSISTOR
NSN, MFG P/N
5961013971555
NSN
5961-01-397-1555
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
TRANSISTOR
Related Searches:
OM11957NK
TRANSISTOR
NSN, MFG P/N
5961013971555
NSN
5961-01-397-1555
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
TRANSISTOR
Related Searches:
V13428
TRANSISTOR
NSN, MFG P/N
5961013971555
NSN
5961-01-397-1555
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
TRANSISTOR
Related Searches:
BZX84C2V7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013971586
NSN
5961-01-397-1586
MFG
NORTH AMERICAN PHILIPS CORP PHILIPS COMPONENTS DISCRETE PRODUCTS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
T610041504BT
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013971976
NSN
5961-01-397-1976
T610041504BT
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013971976
NSN
5961-01-397-1976
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
DESIGN CONTROL REFERENCE: T610041504BT
III END ITEM IDENTIFICATION: 6130-01-260-9053 CHARGER, BATTERY ONBOARD 110 FT WPB "B" CLASS COAST GUARD VESSELS
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 05277
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CONVERT ALTERNATING CURRENT TO UNIDIRECTIONAL CURRENT; 125 TO 175 AMP-AVG CURRENT
TERMINAL TYPE AND QUANTITY: 3 TAB W/WIRE LEAD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
352-1265-010
TRANSISTOR
NSN, MFG P/N
5961013972043
NSN
5961-01-397-2043
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.00 AMPERES MAXIMUM BASE CURRENT, DC
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.990 INCHES NOMINAL
OVERALL WIDTH: 0.865 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 117.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 FLANGE
TEST DATA DOCUMENT: 13499-352-1265 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 33.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE
Related Searches:
C5072689
TRANSISTOR
NSN, MFG P/N
5961013972738
NSN
5961-01-397-2738
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM DRAIN CURRENT AND 10.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 8.33 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 57957-C5072689 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 50.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 10.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
RFL2N05L
TRANSISTOR
NSN, MFG P/N
5961013972738
NSN
5961-01-397-2738
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM DRAIN CURRENT AND 10.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 8.33 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 57957-C5072689 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 50.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 10.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
0442520000
TRANSISTOR
NSN, MFG P/N
5961013974427
NSN
5961-01-397-4427
MFG
SUNAIR ELECTRONICS LLC
Description
TRANSISTOR
Related Searches:
863-005-004
TRANSISTOR
NSN, MFG P/N
5961013974462
NSN
5961-01-397-4462
MFG
PARKER-HANNIFIN CORPORATION DBA CUSTOMER SUPPORT MILITARY DIVISION DIV CUSTOMER SUPPORT OPERATIONS
Description
III END ITEM IDENTIFICATION: CH 47 AIRCRAFT
Related Searches:
353-1282-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013974498
NSN
5961-01-397-4498
353-1282-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013974498
NSN
5961-01-397-4498
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0405100004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013974582
NSN
5961-01-397-4582
0405100004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013974582
NSN
5961-01-397-4582
MFG
SUNAIR ELECTRONICS LLC
Description
SEMICONDUCTOR DEVICE,DIODE
