My Quote Request
No products added yet
5961-01-408-5036
20 Products
1N6102A-JANTXV
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014085036
NSN
5961-01-408-5036
1N6102A-JANTXV
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014085036
NSN
5961-01-408-5036
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 5 IN. BODY LG
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
IN6102A-JANTXV
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014085036
NSN
5961-01-408-5036
IN6102A-JANTXV
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014085036
NSN
5961-01-408-5036
MFG
SEMTECH CORPORATION
Description
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 5 IN. BODY LG
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
FN5410
TRANSISTOR
NSN, MFG P/N
5961014085187
NSN
5961-01-408-5187
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 78711-T235A438 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
MC8744-5099
TRANSISTOR
NSN, MFG P/N
5961014085187
NSN
5961-01-408-5187
MFG
BAE SYSTEMS INTEGRATED SYSTEM TECHNO LOGIES LTD
Description
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 78711-T235A438 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
T235A438-1
TRANSISTOR
NSN, MFG P/N
5961014085187
NSN
5961-01-408-5187
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 78711-T235A438 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
D235A139-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014085188
NSN
5961-01-408-5188
D235A139-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014085188
NSN
5961-01-408-5188
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
FUNCTION FOR WHICH DESIGNED: VARACTOR DIODE
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.102 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 78711-D235A139 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
MA45415
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014085188
NSN
5961-01-408-5188
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
FUNCTION FOR WHICH DESIGNED: VARACTOR DIODE
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.102 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 78711-D235A139 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
353-3781-042
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014085200
NSN
5961-01-408-5200
353-3781-042
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014085200
NSN
5961-01-408-5200
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
FUNCTION FOR WHICH DESIGNED: LIMITER
III END ITEM IDENTIFICATION: GPSMAGR RF
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 0.118 INCHES MINIMUM AND 0.124 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.161 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM CW POWER AND 300.0 WATTS MAXIMUM PEAK PULSE INPUT POWER OVER THE SPECIFIED OPERATING TEMPERATURE RANGE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 13499-353-3781 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MINIMUM REVERSE VOLTAGE, PEAK AND 60.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
A61071P135
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014085200
NSN
5961-01-408-5200
A61071P135
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014085200
NSN
5961-01-408-5200
MFG
SKYWORKS SOLUTIONS INC.
Description
FUNCTION FOR WHICH DESIGNED: LIMITER
III END ITEM IDENTIFICATION: GPSMAGR RF
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 0.118 INCHES MINIMUM AND 0.124 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.161 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM CW POWER AND 300.0 WATTS MAXIMUM PEAK PULSE INPUT POWER OVER THE SPECIFIED OPERATING TEMPERATURE RANGE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 13499-353-3781 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MINIMUM REVERSE VOLTAGE, PEAK AND 60.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
MA4P093S
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014085200
NSN
5961-01-408-5200
MFG
M/A-COM INC. DIV BURLINGTON SEMICONDUCTOR OPERATION
Description
FUNCTION FOR WHICH DESIGNED: LIMITER
III END ITEM IDENTIFICATION: GPSMAGR RF
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 0.118 INCHES MINIMUM AND 0.124 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.161 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM CW POWER AND 300.0 WATTS MAXIMUM PEAK PULSE INPUT POWER OVER THE SPECIFIED OPERATING TEMPERATURE RANGE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 13499-353-3781 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MINIMUM REVERSE VOLTAGE, PEAK AND 60.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
3191419-118-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014085229
NSN
5961-01-408-5229
3191419-118-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014085229
NSN
5961-01-408-5229
MFG
LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INFORMATION SYSTEMS & GLOBAL SOLUTIONS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
95-4893
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014085229
NSN
5961-01-408-5229
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
H980123-001B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014085244
NSN
5961-01-408-5244
H980123-001B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014085244
NSN
5961-01-408-5244
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 0.25 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 82577-H980123 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
SSR 123-001B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014085244
NSN
5961-01-408-5244
SSR 123-001B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014085244
NSN
5961-01-408-5244
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 0.25 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 82577-H980123 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
676-4983-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014086161
NSN
5961-01-408-6161
676-4983-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014086161
NSN
5961-01-408-6161
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
91724101
TRANSISTOR
NSN, MFG P/N
5961014086215
NSN
5961-01-408-6215
MFG
THALES AIR SYSTEMS SA
Description
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 NOMINAL DRAIN TO SOURCE VOLTAGE
Related Searches:
D2704-P70B
TRANSISTOR
NSN, MFG P/N
5961014086215
NSN
5961-01-408-6215
MFG
L-3 COMMUNICATIONS CORPORATION
Description
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 NOMINAL DRAIN TO SOURCE VOLTAGE
Related Searches:
AT41435-5
TRANSISTOR
NSN, MFG P/N
5961014086225
NSN
5961-01-408-6225
MFG
MUTRON CORP
Description
CURRENT RATING PER CHARACTERISTIC: 0.20 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
213011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014086777
NSN
5961-01-408-6777
MFG
WAVETEK RF PRODUCTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT
III END ITEM IDENTIFICATION: 6625-01-363-6212
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOD-27
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.85 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.25 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 330.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
BZV86-1V4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014086777
NSN
5961-01-408-6777
MFG
NORTH AMERICAN PHILIPS CORP PHILIPS COMPONENTS DISCRETE PRODUCTS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT
III END ITEM IDENTIFICATION: 6625-01-363-6212
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOD-27
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.85 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.25 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 330.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
