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5961-01-210-5390
20 Products
20-00928-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012105390
NSN
5961-01-210-5390
20-00928-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012105390
NSN
5961-01-210-5390
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 2.500 OUNCES
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.375 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.400 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 225.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
GZ50205A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012105390
NSN
5961-01-210-5390
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 2.500 OUNCES
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.375 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.400 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 225.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
SL15380
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012105402
NSN
5961-01-210-5402
SL15380
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012105402
NSN
5961-01-210-5402
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.030 INCHES MINIMUM AND 1.150 INCHES MAXIMUM
OVERALL LENGTH: 1.480 INCHES MINIMUM AND 1.520 INCHES MAXIMUM
OVERALL WIDTH: 0.290 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
SM-A-920893
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012105402
NSN
5961-01-210-5402
SM-A-920893
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012105402
NSN
5961-01-210-5402
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.030 INCHES MINIMUM AND 1.150 INCHES MAXIMUM
OVERALL LENGTH: 1.480 INCHES MINIMUM AND 1.520 INCHES MAXIMUM
OVERALL WIDTH: 0.290 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
20-00925-106
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012105403
NSN
5961-01-210-5403
20-00925-106
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012105403
NSN
5961-01-210-5403
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 00724-20-00925 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 14.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.900 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 QUICK DISCONNECT, MALE
Related Searches:
655-941
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012105403
NSN
5961-01-210-5403
655-941
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012105403
NSN
5961-01-210-5403
MFG
MICRO USPD INC
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 00724-20-00925 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 14.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.900 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 QUICK DISCONNECT, MALE
Related Searches:
SA6155
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012105403
NSN
5961-01-210-5403
SA6155
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012105403
NSN
5961-01-210-5403
MFG
SEMTECH CORPORATION
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 00724-20-00925 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 14.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.900 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 QUICK DISCONNECT, MALE
Related Searches:
171-2147
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012105991
NSN
5961-01-210-5991
171-2147
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012105991
NSN
5961-01-210-5991
MFG
CONTINENTAL ELECTRONICS CORPORATION
Description
DESIGN CONTROL REFERENCE: 171-2147
MANUFACTURERS CODE: 52151
OVERALL HEIGHT: 2.500 INCHES NOMINAL
OVERALL LENGTH: 16.000 INCHES NOMINAL
OVERALL WIDTH: 5.250 INCHES NOMINAL
SPECIAL FEATURES: RECTIFIER ASSEMBLY: 3 PHASE,FULLWAVE BRIDEG. 4.5 KVDC PEAK REVERSE VOLTAGE PER HALF WAVE STACK. 9 AMPERES DC FORWARD CURRENT. CONVECTION COOLED
THE MANUFACTURERS DATA:
Related Searches:
SA 2559
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012105991
NSN
5961-01-210-5991
SA 2559
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012105991
NSN
5961-01-210-5991
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
DESIGN CONTROL REFERENCE: 171-2147
MANUFACTURERS CODE: 52151
OVERALL HEIGHT: 2.500 INCHES NOMINAL
OVERALL LENGTH: 16.000 INCHES NOMINAL
OVERALL WIDTH: 5.250 INCHES NOMINAL
SPECIAL FEATURES: RECTIFIER ASSEMBLY: 3 PHASE,FULLWAVE BRIDEG. 4.5 KVDC PEAK REVERSE VOLTAGE PER HALF WAVE STACK. 9 AMPERES DC FORWARD CURRENT. CONVECTION COOLED
THE MANUFACTURERS DATA:
Related Searches:
3279892-3
SEMICONDUCTOR
NSN, MFG P/N
5961012106004
NSN
5961-01-210-6004
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
SEMICONDUCTOR
Related Searches:
723097-20
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012106415
NSN
5961-01-210-6415
723097-20
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012106415
NSN
5961-01-210-6415
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
C159PBX181
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012106415
NSN
5961-01-210-6415
C159PBX181
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012106415
NSN
5961-01-210-6415
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
45610A
TERMINAL
NSN, MFG P/N
5961012107649
NSN
5961-01-210-7649
MFG
HEWLETT PACKARD CO
Description
III END ITEM IDENTIFICATION: OH-58D AHIP (ARMY HELICOPTER IMPROVEMENT PROGRAM), ROTARY WING AIRCRAFT
Related Searches:
11437066
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012107658
NSN
5961-01-210-7658
11437066
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012107658
NSN
5961-01-210-7658
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 18876-11437066 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45000.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -45.6 TO 71.0 DEG CELSIUS
OVERALL HEIGHT: 0.855 INCHES MAXIMUM
OVERALL LENGTH: 6.000 INCHES NOMINAL
OVERALL WIDTH: 4.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 6 THREADED HOLE
Related Searches:
652-911
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012107658
NSN
5961-01-210-7658
652-911
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012107658
NSN
5961-01-210-7658
MFG
MICRO USPD INC
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 18876-11437066 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45000.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -45.6 TO 71.0 DEG CELSIUS
OVERALL HEIGHT: 0.855 INCHES MAXIMUM
OVERALL LENGTH: 6.000 INCHES NOMINAL
OVERALL WIDTH: 4.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 6 THREADED HOLE
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RA3046
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012107658
NSN
5961-01-210-7658
RA3046
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012107658
NSN
5961-01-210-7658
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 18876-11437066 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45000.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -45.6 TO 71.0 DEG CELSIUS
OVERALL HEIGHT: 0.855 INCHES MAXIMUM
OVERALL LENGTH: 6.000 INCHES NOMINAL
OVERALL WIDTH: 4.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 6 THREADED HOLE
Related Searches:
450904-0082
TRANSISTOR
NSN, MFG P/N
5961012108473
NSN
5961-01-210-8473
MFG
NORTHROP GRUMMAN LITEF GMBH DBA LITEF
Description
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.295 INCHES MINIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.360 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 0.5 MAXIMUM COLLECTOR-TO-EMITTER VOLTAGE, INSTANTANEOUS
Related Searches:
SDT7A06
TRANSISTOR
NSN, MFG P/N
5961012108473
NSN
5961-01-210-8473
MFG
SOLITRON DEVICES INC.
Description
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.295 INCHES MINIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.360 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 0.5 MAXIMUM COLLECTOR-TO-EMITTER VOLTAGE, INSTANTANEOUS
Related Searches:
033758-3
TRANSISTOR
NSN, MFG P/N
5961012108892
NSN
5961-01-210-8892
MFG
SIMMONDS PRECISION PRODUCTS INC. DBA GOODRICH SENSORS AND INTERGRATED SYSTMES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 1.20 AMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.25 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 35.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
VA1127
TRANSISTOR
NSN, MFG P/N
5961012108892
NSN
5961-01-210-8892
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 1.20 AMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.25 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 35.0 MAXIMUM DRAIN TO GATE VOLTAGE
