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5961-01-366-1047

20 Products

R5D11015

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013661047

NSN

5961-01-366-1047

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R5D11015

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013661047

NSN

5961-01-366-1047

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-30
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL DIAMETER: 1.047 INCHES NOMINAL
OVERALL LENGTH: 4.625 INCHES MINIMUM AND 5.625 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 180.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REVERSE VOLTAGE, PEAK

P-100-150L60

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013661048

NSN

5961-01-366-1048

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P-100-150L60

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013661048

NSN

5961-01-366-1048

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-30
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL DIAMETER: 1.047 INCHES NOMINAL
OVERALL LENGTH: 4.625 INCHES MINIMUM AND 5.625 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 180.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK

P17-600-150J1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013661048

NSN

5961-01-366-1048

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P17-600-150J1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013661048

NSN

5961-01-366-1048

MFG

LA MARCHE MFG. CO. DBA LA MARCHE

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-30
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL DIAMETER: 1.047 INCHES NOMINAL
OVERALL LENGTH: 4.625 INCHES MINIMUM AND 5.625 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 180.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK

R5D00615

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013661048

NSN

5961-01-366-1048

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R5D00615

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013661048

NSN

5961-01-366-1048

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-30
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL DIAMETER: 1.047 INCHES NOMINAL
OVERALL LENGTH: 4.625 INCHES MINIMUM AND 5.625 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 180.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK

P-750-12

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013661062

NSN

5961-01-366-1062

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P-750-12

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013661062

NSN

5961-01-366-1062

MFG

LA MARCHE MFG. CO. DBA LA MARCHE

D4701-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013661634

NSN

5961-01-366-1634

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D4701-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013661634

NSN

5961-01-366-1634

MFG

MARINE ELECTRIC SYSTEMS INC . DBA MESYS

DK6522-73

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013661875

NSN

5961-01-366-1875

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DK6522-73

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013661875

NSN

5961-01-366-1875

MFG

SKYWORKS SOLUTIONS INC.

1N5117

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013661988

NSN

5961-01-366-1988

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1N5117

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013661988

NSN

5961-01-366-1988

MFG

MICRO USPD INC

Description

OVERALL LENGTH: 1.620 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON

FS121-4001-504N

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013661988

NSN

5961-01-366-1988

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FS121-4001-504N

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013661988

NSN

5961-01-366-1988

MFG

BAE SYSTEMS INTEGRATED SYSTEM TECHNO LOGIES LTD

Description

OVERALL LENGTH: 1.620 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON

02000749-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013662959

NSN

5961-01-366-2959

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02000749-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013662959

NSN

5961-01-366-2959

MFG

LOCKHEED CORP

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN AND GOLD PLATED LEADS
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.017 INCHES MINIMUM AND 0.029 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM
OVERALL WIDTH: 0.040 INCHES MINIMUM AND 0.052 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 RIBBON AND 1 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 NOMINAL BREAKDOWN VOLTAGE, DC

CSG7204-95

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013662959

NSN

5961-01-366-2959

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CSG7204-95

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013662959

NSN

5961-01-366-2959

MFG

SKYWORKS SOLUTIONS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN AND GOLD PLATED LEADS
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.017 INCHES MINIMUM AND 0.029 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM
OVERALL WIDTH: 0.040 INCHES MINIMUM AND 0.052 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 RIBBON AND 1 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 NOMINAL BREAKDOWN VOLTAGE, DC

M5X-1462

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013662959

NSN

5961-01-366-2959

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M5X-1462

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013662959

NSN

5961-01-366-2959

MFG

AEROFLEX / METELICS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN AND GOLD PLATED LEADS
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.017 INCHES MINIMUM AND 0.029 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM
OVERALL WIDTH: 0.040 INCHES MINIMUM AND 0.052 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 RIBBON AND 1 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 NOMINAL BREAKDOWN VOLTAGE, DC

75F236D9

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013662961

NSN

5961-01-366-2961

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75F236D9

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013662961

NSN

5961-01-366-2961

MFG

MORRIS MATERIAL HANDLING INC.

Description

III END ITEM IDENTIFICATION: 979A105-202
MOUNTING METHOD: THREADED STUD
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 INSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1400.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE

6PH10

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013663264

NSN

5961-01-366-3264

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6PH10

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013663264

NSN

5961-01-366-3264

MFG

ELECTRONIC DEVICES INC DBA E D I

IRFK6H450

TRANSISTOR

NSN, MFG P/N

5961013663769

NSN

5961-01-366-3769

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IRFK6H450

TRANSISTOR

NSN, MFG P/N

5961013663769

NSN

5961-01-366-3769

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

63C519534G1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013663770

NSN

5961-01-366-3770

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63C519534G1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013663770

NSN

5961-01-366-3770

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN SIMULATION TRAINING & SUPPORT

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 63C519534G1
MANUFACTURERS CODE: 16331
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:

63D720295G1PC40

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013663770

NSN

5961-01-366-3770

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63D720295G1PC40

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013663770

NSN

5961-01-366-3770

MFG

NAVAL INVENTORY CONTROL POINT MECHANICSBURG

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 63C519534G1
MANUFACTURERS CODE: 16331
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:

171464G01

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961013663981

NSN

5961-01-366-3981

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171464G01

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961013663981

NSN

5961-01-366-3981

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: HAVE QUICK A NET
MAJOR COMPONENTS: 6 PIN DIODES TYPE 162977-4
SPECIAL FEATURES: ESD SENSITIVE

AD0042-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013664254

NSN

5961-01-366-4254

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AD0042-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013664254

NSN

5961-01-366-4254

MFG

NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES NOMINAL PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HCI
TERMINAL LENGTH: 0.357 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE

IRFM150

TRANSISTOR

NSN, MFG P/N

5961013665595

NSN

5961-01-366-5595

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IRFM150

TRANSISTOR

NSN, MFG P/N

5961013665595

NSN

5961-01-366-5595

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.