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5961-01-297-2412

20 Products

247AS-9965-006

TRANSISTOR

NSN, MFG P/N

5961012972412

NSN

5961-01-297-2412

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247AS-9965-006

TRANSISTOR

NSN, MFG P/N

5961012972412

NSN

5961-01-297-2412

MFG

NAVAL AIR SYSTEMS COMMAND

1-5KE6V8CA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012969086

NSN

5961-01-296-9086

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1-5KE6V8CA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012969086

NSN

5961-01-296-9086

MFG

GENERAL SEMICONDUCTOR INDUSTRIES INC

1.5KE6.8CA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012969086

NSN

5961-01-296-9086

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1.5KE6.8CA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012969086

NSN

5961-01-296-9086

MFG

PROTEK DEVICES LP DBA PROTEK DEVICES

95504091

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012969087

NSN

5961-01-296-9087

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95504091

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012969087

NSN

5961-01-296-9087

MFG

SKYWORKS SOLUTIONS INC.

J202

TRANSISTOR

NSN, MFG P/N

5961012969315

NSN

5961-01-296-9315

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J202

TRANSISTOR

NSN, MFG P/N

5961012969315

NSN

5961-01-296-9315

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92

SE9300

TRANSISTOR

NSN, MFG P/N

5961012969316

NSN

5961-01-296-9316

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SE9300

TRANSISTOR

NSN, MFG P/N

5961012969316

NSN

5961-01-296-9316

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

OVERALL HEIGHT: 0.165 INCHES NOMINAL
OVERALL LENGTH: 1.145 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
TERMINAL LENGTH: 0.540 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN

JANTX1N6145A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012969857

NSN

5961-01-296-9857

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JANTX1N6145A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012969857

NSN

5961-01-296-9857

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES NOMINAL REVERSE BREAKDOWN CURRENT, DC AND 20.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6145A
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TX AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: DATA MULTIPLEX SYSTEM AN/USQ-82C
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL DIAMETER: 0.135 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/516 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 NOMINAL BREAKDOWN VOLTAGE, DC AND 9.9 MAXIMUM WORKING PEAK REVERSE VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

JANTX2N3468S

TRANSISTOR

NSN, MFG P/N

5961012970257

NSN

5961-01-297-0257

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JANTX2N3468S

TRANSISTOR

NSN, MFG P/N

5961012970257

NSN

5961-01-297-0257

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: -1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3468S
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/348
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.016 INCHES MINIMUM AND 0.021 INCHES MAXIMUM
TERMINAL LENGTH: 0.250 INCHES MINIMUM AND 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN

2SD845

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961012970747

NSN

5961-01-297-0747

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2SD845

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961012970747

NSN

5961-01-297-0747

MFG

MITSUBISHI INTL CORP

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN

SK9446

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961012970747

NSN

5961-01-297-0747

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SK9446

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961012970747

NSN

5961-01-297-0747

MFG

LOCKHEED MARTIN CORP LOCKHEED MARTIN INFORMATION SYSTEMS AUTOMATED SPARES

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN

5N5995

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012970748

NSN

5961-01-297-0748

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5N5995

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012970748

NSN

5961-01-297-0748

MFG

CATERPILLAR INC. DBA CATERPILLAR DIV GOVERNMENTAL AND DEFENSE PRODUCTS

2W4899

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012970749

NSN

5961-01-297-0749

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2W4899

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012970749

NSN

5961-01-297-0749

MFG

CATERPILLAR INC. DBA CATERPILLAR DIV GOVERNMENTAL AND DEFENSE PRODUCTS

1857780

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012970750

NSN

5961-01-297-0750

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1857780

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012970750

NSN

5961-01-297-0750

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION

C7J007-1

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961012970770

NSN

5961-01-297-0770

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C7J007-1

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961012970770

NSN

5961-01-297-0770

MFG

EATON AEROSPACE LLC DBA STERER ENGINEERING DIV VALVE & ACTUATOR

1984638

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012970797

NSN

5961-01-297-0797

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1984638

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012970797

NSN

5961-01-297-0797

MFG

REMY INC.

Description

MOUNTING METHOD: CLIP
OVERALL HEIGHT: 27.97 MILLIMETERS MINIMUM AND 29.2 MILLIMETERS MAXIMUM
OVERALL LENGTH: 79.82 MILLIMETERS MINIMUM AND 82.04 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 THREADED STUD

BZX61C18

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012970837

NSN

5961-01-297-0837

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BZX61C18

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012970837

NSN

5961-01-297-0837

MFG

DLA LAND AND MARITIME

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-15
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.3 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

6196140

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961012970949

NSN

5961-01-297-0949

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6196140

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961012970949

NSN

5961-01-297-0949

MFG

NAVAL SEA SYSTEMS COMMAND

Description

CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN CONTROL REFERENCE: 6196140
III END ITEM IDENTIFICATION: MK 16 MOD 0 EOD UBA
MAJOR COMPONENTS: LED,GREEN 1; LED,RED 1; CONN,ELEC,RECPT 1
MANUFACTURERS CODE: 53711
SPECIAL FEATURES: ITEMS ARE BEING CODED AS CRITICAL TO INSURE SOURCE INSPECTION WILL BE PERFORMED AT THE POINT OF MANUFACTURE, PRIOR TO MATERIAL RECEIPT BY THE US NAVY OR OTHER DOD COMPONENTS. THESE ITEMS ARE PIECE PARTS OR END ITEMS IN SUPPORT OF VITAL MILITARY HARDWARE
THE MANUFACTURERS DATA:
~1: NECESSARY TO SUSTAIN THE SUCCESSFUL MISSION OF THE SHIPS, SUBMARINES, AND SHORE STATIONS OF THE US NAVY. CRITICAL FEATURES INCLUDING, BUT NOT LIMITED TO, DIMENSIONS, TOLERANCES/CLEARANCES, ELECTRONIC CHARACTERISTICS, AND METALLURGICAL PROPERTIES WILL
~2: BESPECIFIED FOR GOVERNMENT Q AR (QUALITY ASSURANCE REPRESENTATIVES) TO INSURE THE HIGHEST POSSIBLE DEGREE OF QUALITY AND RELIABILITY OF THESE PARTS BEING DELIVERED UNDER NAVICP CONTRACTS;EXPLOSIVE ORDNANCE DISPOSAL TOOLS/EQUIPMENT

2N6059

TRANSISTOR

NSN, MFG P/N

5961012972410

NSN

5961-01-297-2410

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2N6059

TRANSISTOR

NSN, MFG P/N

5961012972410

NSN

5961-01-297-2410

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.328 INCHES MAXIMUM
OVERALL LENGTH: 1.506 INCHES NOMINAL
OVERALL WIDTH: 1.020 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

3235704

TRANSISTOR

NSN, MFG P/N

5961012972410

NSN

5961-01-297-2410

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3235704

TRANSISTOR

NSN, MFG P/N

5961012972410

NSN

5961-01-297-2410

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.328 INCHES MAXIMUM
OVERALL LENGTH: 1.506 INCHES NOMINAL
OVERALL WIDTH: 1.020 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

247AS-C2216-001

TRANSISTOR

NSN, MFG P/N

5961012972411

NSN

5961-01-297-2411

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247AS-C2216-001

TRANSISTOR

NSN, MFG P/N

5961012972411

NSN

5961-01-297-2411

MFG

NAVAL AIR SYSTEMS COMMAND