Featured Products

My Quote Request

No products added yet

5961-01-216-7267

20 Products

NTE152

TRANSISTOR

NSN, MFG P/N

5961012167267

NSN

5961-01-216-7267

View More Info

NTE152

TRANSISTOR

NSN, MFG P/N

5961012167267

NSN

5961-01-216-7267

MFG

NTE ELECTRONICS INC SUB OF SOLID STATE INC

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -3.00 AMPERES MAXIMUM EMITTER CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 300.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

2N3906

TRANSISTOR

NSN, MFG P/N

5961012166475

NSN

5961-01-216-6475

View More Info

2N3906

TRANSISTOR

NSN, MFG P/N

5961012166475

NSN

5961-01-216-6475

MFG

NATIONAL SEMICONDUCTOR CORPORATION

SPS6868

TRANSISTOR

NSN, MFG P/N

5961012166475

NSN

5961-01-216-6475

View More Info

SPS6868

TRANSISTOR

NSN, MFG P/N

5961012166475

NSN

5961-01-216-6475

MFG

FREESCALE SEMICONDUCTOR INC.

10673229-015

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012166476

NSN

5961-01-216-6476

View More Info

10673229-015

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012166476

NSN

5961-01-216-6476

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 9.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.571 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

SZG35010RL

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012166477

NSN

5961-01-216-6477

View More Info

SZG35010RL

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012166477

NSN

5961-01-216-6477

MFG

FREESCALE SEMICONDUCTOR INC.

SZG35009K14

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012166478

NSN

5961-01-216-6478

View More Info

SZG35009K14

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012166478

NSN

5961-01-216-6478

MFG

FREESCALE SEMICONDUCTOR INC.

367634A-3

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012166479

NSN

5961-01-216-6479

View More Info

367634A-3

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012166479

NSN

5961-01-216-6479

MFG

HOBART BROS CO

036-001A001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012167192

NSN

5961-01-216-7192

View More Info

036-001A001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012167192

NSN

5961-01-216-7192

MFG

NATIONAL FLUID SEPERATORS DBA NATIONAL FLUID SEPARATORS

5741

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012167192

NSN

5961-01-216-7192

View More Info

5741

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012167192

NSN

5961-01-216-7192

MFG

PHILIPS SEMICONDUCTORS INC

2SA838-B

TRANSISTOR

NSN, MFG P/N

5961012167263

NSN

5961-01-216-7263

View More Info

2SA838-B

TRANSISTOR

NSN, MFG P/N

5961012167263

NSN

5961-01-216-7263

MFG

MATSUSHITA DENKI SANGYO

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 220.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

30-10-8381

TRANSISTOR

NSN, MFG P/N

5961012167263

NSN

5961-01-216-7263

View More Info

30-10-8381

TRANSISTOR

NSN, MFG P/N

5961012167263

NSN

5961-01-216-7263

MFG

KIKUSUI INTL CORP

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 220.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

2SA1015-Y

TRANSISTOR

NSN, MFG P/N

5961012167264

NSN

5961-01-216-7264

View More Info

2SA1015-Y

TRANSISTOR

NSN, MFG P/N

5961012167264

NSN

5961-01-216-7264

MFG

TOSHIBA SYOUJI

Description

CURRENT RATING PER CHARACTERISTIC: -150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 150.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 400.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

30-11-0151

TRANSISTOR

NSN, MFG P/N

5961012167264

NSN

5961-01-216-7264

View More Info

30-11-0151

TRANSISTOR

NSN, MFG P/N

5961012167264

NSN

5961-01-216-7264

MFG

KIKUSUI INTL CORP

Description

CURRENT RATING PER CHARACTERISTIC: -150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 150.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 400.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

503203016

TRANSISTOR

NSN, MFG P/N

5961012167264

NSN

5961-01-216-7264

View More Info

503203016

TRANSISTOR

NSN, MFG P/N

5961012167264

NSN

5961-01-216-7264

MFG

GRAPHTEC AMERICA INC.

Description

CURRENT RATING PER CHARACTERISTIC: -150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 150.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 400.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

2SB834-Y

TRANSISTOR

NSN, MFG P/N

5961012167265

NSN

5961-01-216-7265

View More Info

2SB834-Y

TRANSISTOR

NSN, MFG P/N

5961012167265

NSN

5961-01-216-7265

MFG

TOSHIBA SYOJI

Description

CURRENT RATING PER CHARACTERISTIC: -3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -0.50 AMPERES MAXIMUM BASE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NIP
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

30-20-8341

TRANSISTOR

NSN, MFG P/N

5961012167265

NSN

5961-01-216-7265

View More Info

30-20-8341

TRANSISTOR

NSN, MFG P/N

5961012167265

NSN

5961-01-216-7265

MFG

KIKUSUI INTL CORP

Description

CURRENT RATING PER CHARACTERISTIC: -3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -0.50 AMPERES MAXIMUM BASE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NIP
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

2SC1505-K

TRANSISTOR

NSN, MFG P/N

5961012167266

NSN

5961-01-216-7266

View More Info

2SC1505-K

TRANSISTOR

NSN, MFG P/N

5961012167266

NSN

5961-01-216-7266

MFG

NIHON DENKI

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 1.230 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN AND 1 TAB, SOLDER LUG
TRANSFER RATIO: 40.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

30-31-5051

TRANSISTOR

NSN, MFG P/N

5961012167266

NSN

5961-01-216-7266

View More Info

30-31-5051

TRANSISTOR

NSN, MFG P/N

5961012167266

NSN

5961-01-216-7266

MFG

KIKUSUI INTL CORP

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 1.230 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN AND 1 TAB, SOLDER LUG
TRANSFER RATIO: 40.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

2SD880-Y

TRANSISTOR

NSN, MFG P/N

5961012167267

NSN

5961-01-216-7267

View More Info

2SD880-Y

TRANSISTOR

NSN, MFG P/N

5961012167267

NSN

5961-01-216-7267

MFG

TOSHIBA SYOUJI

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -3.00 AMPERES MAXIMUM EMITTER CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 300.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

30-40-8802

TRANSISTOR

NSN, MFG P/N

5961012167267

NSN

5961-01-216-7267

View More Info

30-40-8802

TRANSISTOR

NSN, MFG P/N

5961012167267

NSN

5961-01-216-7267

MFG

KIKUSUI INTL CORP

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -3.00 AMPERES MAXIMUM EMITTER CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 300.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN