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5961-01-216-7267
20 Products
NTE152
TRANSISTOR
NSN, MFG P/N
5961012167267
NSN
5961-01-216-7267
MFG
NTE ELECTRONICS INC SUB OF SOLID STATE INC
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -3.00 AMPERES MAXIMUM EMITTER CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 300.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2N3906
TRANSISTOR
NSN, MFG P/N
5961012166475
NSN
5961-01-216-6475
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
TRANSISTOR
Related Searches:
SPS6868
TRANSISTOR
NSN, MFG P/N
5961012166475
NSN
5961-01-216-6475
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
10673229-015
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012166476
NSN
5961-01-216-6476
10673229-015
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012166476
NSN
5961-01-216-6476
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 9.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.571 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
SZG35010RL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012166477
NSN
5961-01-216-6477
SZG35010RL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012166477
NSN
5961-01-216-6477
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SZG35009K14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012166478
NSN
5961-01-216-6478
SZG35009K14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012166478
NSN
5961-01-216-6478
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
367634A-3
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012166479
NSN
5961-01-216-6479
367634A-3
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012166479
NSN
5961-01-216-6479
MFG
HOBART BROS CO
Description
RETAINER,SEMICONDUCTOR DEVICE
Related Searches:
036-001A001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012167192
NSN
5961-01-216-7192
036-001A001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012167192
NSN
5961-01-216-7192
MFG
NATIONAL FLUID SEPERATORS DBA NATIONAL FLUID SEPARATORS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
5741
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012167192
NSN
5961-01-216-7192
MFG
PHILIPS SEMICONDUCTORS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2SA838-B
TRANSISTOR
NSN, MFG P/N
5961012167263
NSN
5961-01-216-7263
MFG
MATSUSHITA DENKI SANGYO
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 220.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
30-10-8381
TRANSISTOR
NSN, MFG P/N
5961012167263
NSN
5961-01-216-7263
MFG
KIKUSUI INTL CORP
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 220.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2SA1015-Y
TRANSISTOR
NSN, MFG P/N
5961012167264
NSN
5961-01-216-7264
MFG
TOSHIBA SYOUJI
Description
CURRENT RATING PER CHARACTERISTIC: -150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 150.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 400.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
30-11-0151
TRANSISTOR
NSN, MFG P/N
5961012167264
NSN
5961-01-216-7264
MFG
KIKUSUI INTL CORP
Description
CURRENT RATING PER CHARACTERISTIC: -150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 150.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 400.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
503203016
TRANSISTOR
NSN, MFG P/N
5961012167264
NSN
5961-01-216-7264
MFG
GRAPHTEC AMERICA INC.
Description
CURRENT RATING PER CHARACTERISTIC: -150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 150.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 400.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2SB834-Y
TRANSISTOR
NSN, MFG P/N
5961012167265
NSN
5961-01-216-7265
MFG
TOSHIBA SYOJI
Description
CURRENT RATING PER CHARACTERISTIC: -3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -0.50 AMPERES MAXIMUM BASE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NIP
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
30-20-8341
TRANSISTOR
NSN, MFG P/N
5961012167265
NSN
5961-01-216-7265
MFG
KIKUSUI INTL CORP
Description
CURRENT RATING PER CHARACTERISTIC: -3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -0.50 AMPERES MAXIMUM BASE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NIP
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2SC1505-K
TRANSISTOR
NSN, MFG P/N
5961012167266
NSN
5961-01-216-7266
MFG
NIHON DENKI
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 1.230 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN AND 1 TAB, SOLDER LUG
TRANSFER RATIO: 40.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
30-31-5051
TRANSISTOR
NSN, MFG P/N
5961012167266
NSN
5961-01-216-7266
MFG
KIKUSUI INTL CORP
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 1.230 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN AND 1 TAB, SOLDER LUG
TRANSFER RATIO: 40.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2SD880-Y
TRANSISTOR
NSN, MFG P/N
5961012167267
NSN
5961-01-216-7267
MFG
TOSHIBA SYOUJI
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -3.00 AMPERES MAXIMUM EMITTER CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 300.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
30-40-8802
TRANSISTOR
NSN, MFG P/N
5961012167267
NSN
5961-01-216-7267
MFG
KIKUSUI INTL CORP
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -3.00 AMPERES MAXIMUM EMITTER CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 300.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
