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5961-01-313-2459
20 Products
2SC2876
TRANSISTOR
NSN, MFG P/N
5961013132459
NSN
5961-01-313-2459
MFG
TOSHIBA SYOUJI
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 6625-01-251-9860 COUNTER,ELECTRONIC,DIGITAL
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.093 INCHES NOMINAL
OVERALL LENGTH: 0.062 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 PIN
TRANSFER RATIO: 30.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
948E246G1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013128268
NSN
5961-01-312-8268
948E246G1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013128268
NSN
5961-01-312-8268
MFG
GENERAL ELECTRIC CO GE DRIVE SYSTEMS GOVERNMENT BUSINESS OPN
Description
DESIGN CONTROL REFERENCE: 948E246G1
III END ITEM IDENTIFICATION: MG SET REGULATING AND STARTING SYSTEM
MANUFACTURERS CODE: 02989
SPECIAL FEATURES: MOTOR START
THE MANUFACTURERS DATA:
Related Searches:
948E500 PIECE 27
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013128268
NSN
5961-01-312-8268
948E500 PIECE 27
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013128268
NSN
5961-01-312-8268
MFG
BAE SYSTEMS CONTROLS INC.
Description
DESIGN CONTROL REFERENCE: 948E246G1
III END ITEM IDENTIFICATION: MG SET REGULATING AND STARTING SYSTEM
MANUFACTURERS CODE: 02989
SPECIAL FEATURES: MOTOR START
THE MANUFACTURERS DATA:
Related Searches:
3513 793 03593
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013128407
NSN
5961-01-312-8407
3513 793 03593
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013128407
NSN
5961-01-312-8407
MFG
THALES UK LIMITED, AEROSPACE DIVISION
Description
SPECIAL FEATURES: SINGLE PHASE;FULL-WAVE BRIDGE;METAL BASE PLATE;600V;12 AMPS;HEAT SINK AND CHASSIS MOUNTING;FOUR TAB TERMINALS;0.890 IN. MAX DIA;0.300 IN. MAX LG
Related Searches:
PK60F
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013128407
NSN
5961-01-312-8407
PK60F
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013128407
NSN
5961-01-312-8407
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
SPECIAL FEATURES: SINGLE PHASE;FULL-WAVE BRIDGE;METAL BASE PLATE;600V;12 AMPS;HEAT SINK AND CHASSIS MOUNTING;FOUR TAB TERMINALS;0.890 IN. MAX DIA;0.300 IN. MAX LG
Related Searches:
019-005539-001
TRANSISTOR
NSN, MFG P/N
5961013131429
NSN
5961-01-313-1429
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CRITICALITY CODE JUSTIFICATION: CBBL
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 26916-019-005539 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
2N4351
TRANSISTOR
NSN, MFG P/N
5961013131429
NSN
5961-01-313-1429
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CRITICALITY CODE JUSTIFICATION: CBBL
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 26916-019-005539 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
UT1572
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013131430
NSN
5961-01-313-1430
MFG
MICRO USPD INC
Description
III END ITEM IDENTIFICATION: SEAHAWK HELICOPTER S70B-2
Related Searches:
1N517A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013131432
NSN
5961-01-313-1432
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
(NON-CORE DATA) SPECIFICATION/STANDARD DATA: 80131-RELEASE NO. 1620 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.138 INCHES
OVERALL DIAMETER: 0.300 INCHES NOMINAL
OVERALL LENGTH: 2.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL FORWARD VOLTAGE, AVERAGE
Related Searches:
1N514
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013131433
NSN
5961-01-313-1433
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
(NON-CORE DATA) SPECIFICATION/STANDARD DATA: 80131-RELEASE NO. 1620 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.138 INCHES
OVERALL DIAMETER: 0.300 INCHES NOMINAL
OVERALL LENGTH: 2.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
119387-1
HV-BRIDGE ASSEMBLY
NSN, MFG P/N
5961013131461
NSN
5961-01-313-1461
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
III END ITEM IDENTIFICATION: AIRCRAFT AN/APX-77
Related Searches:
F21000179
TRANSISTOR
NSN, MFG P/N
5961013131605
NSN
5961-01-313-1605
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
III END ITEM IDENTIFICATION: FLIGHT DATA INPUT OUTPUT, FDIO, CONTRACT FA01-84-C-00002
Related Searches:
H2572LCD
TRANSISTOR
NSN, MFG P/N
5961013131605
NSN
5961-01-313-1605
MFG
HITACHI MAGNETICS CORP DIV OF HITACHI METALS INTERNATIONAL LTD
Description
III END ITEM IDENTIFICATION: FLIGHT DATA INPUT OUTPUT, FDIO, CONTRACT FA01-84-C-00002
Related Searches:
226-10400070
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013131606
NSN
5961-01-313-1606
226-10400070
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013131606
NSN
5961-01-313-1606
MFG
ASTEC INDUSTRIES INC. DIV ASTEC IND.
Description
III END ITEM IDENTIFICATION: FLIGHT DATA INPUT OUTPUT, FDIO, CONTRACT FA01-84-C-00002
Related Searches:
F52005402
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013131606
NSN
5961-01-313-1606
MFG
WESPERCORP FSG INC
Description
III END ITEM IDENTIFICATION: FLIGHT DATA INPUT OUTPUT, FDIO, CONTRACT FA01-84-C-00002
Related Searches:
RGP10B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013131606
NSN
5961-01-313-1606
MFG
GENERAL SEMICONDUCTOR INC
Description
III END ITEM IDENTIFICATION: FLIGHT DATA INPUT OUTPUT, FDIO, CONTRACT FA01-84-C-00002
Related Searches:
A3012701-2
TRANSISTOR
NSN, MFG P/N
5961013132003
NSN
5961-01-313-2003
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
TRANSISTOR
Related Searches:
RF2252
TRANSISTOR
NSN, MFG P/N
5961013132003
NSN
5961-01-313-2003
MFG
M/A-COM TECHNOLOGY SOLUTIONS INC. DBA COMMERCIAL ELECTRONICS PHO DIV POWER HYBRIDS OPERATION
Description
TRANSISTOR
Related Searches:
ST1038
TRANSISTOR
NSN, MFG P/N
5961013132003
NSN
5961-01-313-2003
MFG
SEMETEX CORP
Description
TRANSISTOR
Related Searches:
1854-1003
TRANSISTOR
NSN, MFG P/N
5961013132459
NSN
5961-01-313-2459
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 6625-01-251-9860 COUNTER,ELECTRONIC,DIGITAL
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.093 INCHES NOMINAL
OVERALL LENGTH: 0.062 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 PIN
TRANSFER RATIO: 30.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
