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5961-01-312-8266
20 Products
112121P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013128266
NSN
5961-01-312-8266
MFG
VARO LLC
Description
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: POWER SUPPLY MODULE 4385
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2SD560-L
TRANSISTOR
NSN, MFG P/N
5961013127566
NSN
5961-01-312-7566
MFG
NEC ELECTRONICS U S A INC ELECTRON DIV
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 6625-01-230-7325 RECORDER,TAPE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.8 MILLIMETERS MAXIMUM
OVERALL LENGTH: 15.5 MILLIMETERS MAXIMUM
OVERALL WIDTH: 10.6 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 12.7 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
503200028
TRANSISTOR
NSN, MFG P/N
5961013127566
NSN
5961-01-312-7566
MFG
GRAPHTEC AMERICA INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 6625-01-230-7325 RECORDER,TAPE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.8 MILLIMETERS MAXIMUM
OVERALL LENGTH: 15.5 MILLIMETERS MAXIMUM
OVERALL WIDTH: 10.6 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 12.7 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
2SB601-L
TRANSISTOR
NSN, MFG P/N
5961013127567
NSN
5961-01-312-7567
MFG
NEC ELECTRONICS U S A INC ELECTRON DIV
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 6625-01-230-7325 RECORDER,TAPE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.8 MILLIMETERS MAXIMUM
OVERALL LENGTH: 15.5 MILLIMETERS MAXIMUM
OVERALL WIDTH: 10.6 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 12.7 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
503203018
TRANSISTOR
NSN, MFG P/N
5961013127567
NSN
5961-01-312-7567
MFG
GRAPHTEC AMERICA INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 6625-01-230-7325 RECORDER,TAPE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.8 MILLIMETERS MAXIMUM
OVERALL LENGTH: 15.5 MILLIMETERS MAXIMUM
OVERALL WIDTH: 10.6 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 12.7 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
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2SB675
TRANSISTOR
NSN, MFG P/N
5961013127568
NSN
5961-01-312-7568
MFG
TOSHIBA SYOUJI
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 6625-01-230-7325 RECORDER,TAPE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES NOMINAL
OVERALL LENGTH: 1.145 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.381 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
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503203020
TRANSISTOR
NSN, MFG P/N
5961013127568
NSN
5961-01-312-7568
MFG
GRAPHTEC AMERICA INC.
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 6625-01-230-7325 RECORDER,TAPE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES NOMINAL
OVERALL LENGTH: 1.145 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.381 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
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088-20130
MOUNTING KIT,TRANSI
NSN, MFG P/N
5961013127905
NSN
5961-01-312-7905
MFG
POWER-ONE DC POWER SUPPLIES
Description
MOUNTING KIT,TRANSI
Related Searches:
151-0770-01
TRANSISTOR
NSN, MFG P/N
5961013127978
NSN
5961-01-312-7978
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
Related Searches:
151-0559-00
TRANSISTOR
NSN, MFG P/N
5961013127979
NSN
5961-01-312-7979
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
Related Searches:
AQ-EBR-109
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013127981
NSN
5961-01-312-7981
AQ-EBR-109
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013127981
NSN
5961-01-312-7981
MFG
INSTITUTE OF MANAGEMENT INSTRUCTION INC DBA INTL MANAGEMENT INSTITUTE
Description
SPECIAL FEATURES: FLYBACK DIODE
Related Searches:
152-0327-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013127982
NSN
5961-01-312-7982
152-0327-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013127982
NSN
5961-01-312-7982
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
152-0932-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013127983
NSN
5961-01-312-7983
152-0932-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013127983
NSN
5961-01-312-7983
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
152-0832-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013127984
NSN
5961-01-312-7984
152-0832-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013127984
NSN
5961-01-312-7984
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
11062
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013127985
NSN
5961-01-312-7985
MFG
TRIMBLE MILITARY AND ADVANCED SYSTEMS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
173-10837
COVER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013128010
NSN
5961-01-312-8010
MFG
POWER-ONE DC POWER SUPPLIES
Description
COVER,SEMICONDUCTOR DEVICE
Related Searches:
AQ-EBR-100
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013128035
NSN
5961-01-312-8035
AQ-EBR-100
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013128035
NSN
5961-01-312-8035
MFG
INSTITUTE OF MANAGEMENT INSTRUCTION INC DBA INTL MANAGEMENT INSTITUTE
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
127-0991
TRANSISTOR
NSN, MFG P/N
5961013128265
NSN
5961-01-312-8265
MFG
RADIOSPARES SAS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 1.30 AMPERES NOMINAL DRAIN CURRENT AND 250.00 MICROAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 1.30 AMPERES MINIMUM ON-STATE DRAIN CURRENT AND 1.30 AMPERES MAXIMUM SOURCE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.124 INCHES MINIMUM AND 0.134 INCHES MAXIMUM
OVERALL LENGTH: 0.188 INCHES MINIMUM AND 0.198 INCHES MAXIMUM
OVERALL WIDTH: 0.238 INCHES MINIMUM AND 0.248 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION
TERMINAL LENGTH: 0.256 INCHES MINIMUM AND 0.306 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND -20.0 MINIMUM GATE TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 100.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 2.0 MINIMUM GATE TO SOURCE
~1: THRESHOLD VOLTAGE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
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IRFD120
TRANSISTOR
NSN, MFG P/N
5961013128265
NSN
5961-01-312-8265
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 1.30 AMPERES NOMINAL DRAIN CURRENT AND 250.00 MICROAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 1.30 AMPERES MINIMUM ON-STATE DRAIN CURRENT AND 1.30 AMPERES MAXIMUM SOURCE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.124 INCHES MINIMUM AND 0.134 INCHES MAXIMUM
OVERALL LENGTH: 0.188 INCHES MINIMUM AND 0.198 INCHES MAXIMUM
OVERALL WIDTH: 0.238 INCHES MINIMUM AND 0.248 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION
TERMINAL LENGTH: 0.256 INCHES MINIMUM AND 0.306 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND -20.0 MINIMUM GATE TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 100.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 2.0 MINIMUM GATE TO SOURCE
~1: THRESHOLD VOLTAGE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
Related Searches:
RAR4494
TRANSISTOR
NSN, MFG P/N
5961013128265
NSN
5961-01-312-8265
MFG
DCNS NAVIRES ARMES LORIENT
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 1.30 AMPERES NOMINAL DRAIN CURRENT AND 250.00 MICROAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 1.30 AMPERES MINIMUM ON-STATE DRAIN CURRENT AND 1.30 AMPERES MAXIMUM SOURCE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.124 INCHES MINIMUM AND 0.134 INCHES MAXIMUM
OVERALL LENGTH: 0.188 INCHES MINIMUM AND 0.198 INCHES MAXIMUM
OVERALL WIDTH: 0.238 INCHES MINIMUM AND 0.248 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION
TERMINAL LENGTH: 0.256 INCHES MINIMUM AND 0.306 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND -20.0 MINIMUM GATE TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 100.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 2.0 MINIMUM GATE TO SOURCE
~1: THRESHOLD VOLTAGE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
