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5961-01-378-9836
20 Products
2SB822Q/R
TRANSISTOR
NSN, MFG P/N
5961013789836
NSN
5961-01-378-9836
MFG
TOSHIBA INTERNATIONAL CORPORATION DBA TOSHIBA INTERNATIONAL
Description
TRANSISTOR
Related Searches:
30477-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013787318
NSN
5961-01-378-7318
30477-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013787318
NSN
5961-01-378-7318
MFG
UNITRON INC
Description
III END ITEM IDENTIFICATION: ECU-108/E
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 INSULATED WIRE LEAD W/TERMINAL LUG AND 1 INSULATED WIRE LEAD
Related Searches:
1901-1344
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013787662
NSN
5961-01-378-7662
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 450.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-34
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.062 INCHES NOMINAL
OVERALL LENGTH: 0.120 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
200025
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013787662
NSN
5961-01-378-7662
MFG
WAVETEK RF PRODUCTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 450.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-34
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.062 INCHES NOMINAL
OVERALL LENGTH: 0.120 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
BAS45
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013787662
NSN
5961-01-378-7662
MFG
PHILIPS ELECTRONICS NEDERLAND BV
Description
CURRENT RATING PER CHARACTERISTIC: 450.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-34
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.062 INCHES NOMINAL
OVERALL LENGTH: 0.120 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
205052P2
TRANSISTOR
NSN, MFG P/N
5961013787857
NSN
5961-01-378-7857
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
JANTX1N3439
TRANSISTOR
NSN, MFG P/N
5961013787857
NSN
5961-01-378-7857
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
ST1114H
TRANSISTOR
NSN, MFG P/N
5961013787857
NSN
5961-01-378-7857
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
85HFR60
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013788090
NSN
5961-01-378-8090
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 85.00 AMPERES NOMINAL FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 180.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
OVERALL LENGTH: 1.000 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD QUANTITY PER INCH: 28
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM EMITTER TO COLLECTOR VOLTAGE, FLOATING POTENTIAL, DC WITH BASE BIASED IN REVERSE DIRECTION WITH RESPECT TO THE COLLECTOR
Related Searches:
MBR030
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013788500
NSN
5961-01-378-8500
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: PACER DAWN
SPECIAL FEATURES: MAY BE MBR030A RECTIFIER
Related Searches:
89108802-01
TRANSISTOR
NSN, MFG P/N
5961013789595
NSN
5961-01-378-9595
MFG
OGDEN AIR LOGISTICS CENTER
Description
CRITICALITY CODE JUSTIFICATION: FEAT
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: PNP GERMANIUN TRANSISTOR SELECT FROM 89108801-01, REPLACES 99240-160 AND BACT1S1, ANY QUESTIONS TO DWIGHT MARTIN DSN458-3229, APPLICATIONMSPP 1GM030G
SPECIAL TEST FEATURES: TESTED TO OOALC DRAWING 89108802 FOR HCI
Related Searches:
NH89108802-01
TRANSISTOR
NSN, MFG P/N
5961013789595
NSN
5961-01-378-9595
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: PNP GERMANIUN TRANSISTOR SELECT FROM 89108801-01, REPLACES 99240-160 AND BACT1S1, ANY QUESTIONS TO DWIGHT MARTIN DSN458-3229, APPLICATIONMSPP 1GM030G
SPECIAL TEST FEATURES: TESTED TO OOALC DRAWING 89108802 FOR HCI
Related Searches:
352-1557-010
TRANSISTOR
NSN, MFG P/N
5961013789812
NSN
5961-01-378-9812
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
TRANSISTOR
Related Searches:
P6 KE 13A
TRANSISTOR
NSN, MFG P/N
5961013789828
NSN
5961-01-378-9828
MFG
GSI CORPORATION
Description
TRANSISTOR
Related Searches:
P6 KE 24A
TRANSISTOR
NSN, MFG P/N
5961013789830
NSN
5961-01-378-9830
MFG
GSI CORPORATION
Description
TRANSISTOR
Related Searches:
2SC2021-S
TRANSISTOR
NSN, MFG P/N
5961013789831
NSN
5961-01-378-9831
MFG
TOSHIBA INTERNATIONAL CORPORATION DBA TOSHIBA INTERNATIONAL
Description
TRANSISTOR
Related Searches:
P6 KE 100A
TRANSISTOR
NSN, MFG P/N
5961013789832
NSN
5961-01-378-9832
MFG
GSI CORPORATION
Description
TRANSISTOR
Related Searches:
2SA937-S
TRANSISTOR
NSN, MFG P/N
5961013789833
NSN
5961-01-378-9833
MFG
TOSHIBA INTERNATIONAL CORPORATION DBA TOSHIBA INTERNATIONAL
Description
TRANSISTOR
Related Searches:
2SD1226M-Q
TRANSISTOR
NSN, MFG P/N
5961013789834
NSN
5961-01-378-9834
MFG
TOSHIBA INTERNATIONAL CORPORATION DBA TOSHIBA INTERNATIONAL
Description
TRANSISTOR
Related Searches:
2SB822Q
TRANSISTOR
NSN, MFG P/N
5961013789835
NSN
5961-01-378-9835
MFG
TOSHIBA INTERNATIONAL CORPORATION DBA TOSHIBA INTERNATIONAL
Description
TRANSISTOR
