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5961-01-311-1772
20 Products
FBL-00-204
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013111772
NSN
5961-01-311-1772
FBL-00-204
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013111772
NSN
5961-01-311-1772
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
151-0798-00
TRANSISTOR
NSN, MFG P/N
5961013110630
NSN
5961-01-311-0630
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
Related Searches:
2SB826Q OR R
TRANSISTOR
NSN, MFG P/N
5961013110630
NSN
5961-01-311-0630
MFG
SANYO ELECTRIC CO. LTD
Description
TRANSISTOR
Related Searches:
89300416
TRANSISTOR
NSN, MFG P/N
5961013110630
NSN
5961-01-311-0630
MFG
THALES AIR DEFENCE
Description
TRANSISTOR
Related Searches:
151-0797-00
TRANSISTOR
NSN, MFG P/N
5961013110631
NSN
5961-01-311-0631
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
Related Searches:
2SD1062Q OR R
TRANSISTOR
NSN, MFG P/N
5961013110631
NSN
5961-01-311-0631
MFG
SANYO ELECTRIC CO. LTD
Description
TRANSISTOR
Related Searches:
89300415
TRANSISTOR
NSN, MFG P/N
5961013110631
NSN
5961-01-311-0631
MFG
THALES AIR DEFENCE
Description
TRANSISTOR
Related Searches:
151-0816-00
TRANSISTOR
NSN, MFG P/N
5961013110632
NSN
5961-01-311-0632
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
Related Searches:
2SA1264R
TRANSISTOR
NSN, MFG P/N
5961013110632
NSN
5961-01-311-0632
MFG
TOSHIBA AMERICAN INFORMATION SYSTEMS INC COMPUTER SYSTEMS DIV
Description
TRANSISTOR
Related Searches:
89300417
TRANSISTOR
NSN, MFG P/N
5961013110632
NSN
5961-01-311-0632
MFG
THALES AIR DEFENCE
Description
TRANSISTOR
Related Searches:
JAN2N3507L
TRANSISTOR
NSN, MFG P/N
5961013110633
NSN
5961-01-311-0633
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N3507L
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL S
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-05
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/349
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/349 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.1414 INCHES NOMINAL
TERMINAL LENGTH: 1.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
TRANSFER RATIO: 3.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 15.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
507749-13
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013110634
NSN
5961-01-311-0634
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 3.500 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 2.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
RA2652
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013110634
NSN
5961-01-311-0634
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 3.500 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 2.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
60224-400
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013110660
NSN
5961-01-311-0660
60224-400
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013110660
NSN
5961-01-311-0660
MFG
DLA LAND AND MARITIME
Description
MAJOR COMPONENTS: DIODE 7; PRINTED WIRING BOARD 1
Related Searches:
2BK-511321
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013110865
NSN
5961-01-311-0865
2BK-511321
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013110865
NSN
5961-01-311-0865
MFG
BAE SYSTEMS INTEGRATED SYSTEM TECHNO LOGIES LTD
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6064A
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.025 INCHES MINIMUM AND 0.035 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 105.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 16.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
JANTX1N6064A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013110865
NSN
5961-01-311-0865
JANTX1N6064A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013110865
NSN
5961-01-311-0865
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6064A
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.025 INCHES MINIMUM AND 0.035 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 105.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 16.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
G-909
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013111253
NSN
5961-01-311-1253
MFG
HENSCHEL INC. DBA L-3 HENSCHEL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1002113-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013111353
NSN
5961-01-311-1353
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 140.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.3 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 30881-1002113 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.0 MINIMUM NOMINAL REGULATOR VOLTAGE AND 7.9 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
3246159-0002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013111353
NSN
5961-01-311-1353
3246159-0002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013111353
NSN
5961-01-311-1353
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 140.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.3 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 30881-1002113 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.0 MINIMUM NOMINAL REGULATOR VOLTAGE AND 7.9 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
BZX85C7V5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013111353
NSN
5961-01-311-1353
MFG
THALES COMPONENTS CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 140.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.3 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 30881-1002113 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.0 MINIMUM NOMINAL REGULATOR VOLTAGE AND 7.9 MAXIMUM NOMINAL REGULATOR VOLTAGE
