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5961-01-484-3148

20 Products

Q25-0019-004

TRANSISTOR

NSN, MFG P/N

5961014843148

NSN

5961-01-484-3148

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Q25-0019-004

TRANSISTOR

NSN, MFG P/N

5961014843148

NSN

5961-01-484-3148

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
SPECIAL FEATURES: 550 VOLTS, 6 AMP.

13496558

TRANSISTOR

NSN, MFG P/N

5961014837653

NSN

5961-01-483-7653

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13496558

TRANSISTOR

NSN, MFG P/N

5961014837653

NSN

5961-01-483-7653

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 1240-01-460-6103
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 1.010 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

CTJ420E100

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014838240

NSN

5961-01-483-8240

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CTJ420E100

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014838240

NSN

5961-01-483-8240

MFG

DEUTSCH ENGINEERED CONNECTING DEVICES INC DBA DEFENSE AEROSPACE OPERATIONS DIV DEFENSE AEROSPACE OPERATIONS

Description

COMPONENT NAME AND QUANTITY: 6 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 50.00 AMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE ALL SEMICONDUCTOR DEVICE DIODE
III END ITEM IDENTIFICATION: WAVEGUIDE PRE
III PRECIOUS MATERIAL AND LOCATION: CONTACTS GOLD
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: CLIP
OVERALL HEIGHT: 1.170 INCHES NOMINAL
OVERALL LENGTH: 1.020 INCHES NOMINAL
OVERALL WIDTH: 0.672 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 15 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 420.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS ALL SEMICONDUCTOR DEVICE DIODE

0021306Z00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014839161

NSN

5961-01-483-9161

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0021306Z00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014839161

NSN

5961-01-483-9161

MFG

EADS DEFENSE SECURITY AND SYSTEMS SA - EADS DS FRANCE

Description

SPECIAL FEATURES: OPERATING TEMPERATURE -55/+125 DEGREES C
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.495 MINIMUM REGULATOR VOLTAGE, DC AND 2.505 MAXIMUM REGULATOR VOLTAGE, DC

LT1009MH

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014839161

NSN

5961-01-483-9161

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LT1009MH

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014839161

NSN

5961-01-483-9161

MFG

LINEAR TECHNOLOGY CORPORATION DBA LINEAR TECHNOLOGY

Description

SPECIAL FEATURES: OPERATING TEMPERATURE -55/+125 DEGREES C
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.495 MINIMUM REGULATOR VOLTAGE, DC AND 2.505 MAXIMUM REGULATOR VOLTAGE, DC

11443673-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014840148

NSN

5961-01-484-0148

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11443673-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014840148

NSN

5961-01-484-0148

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG
THREAD QUANTITY PER INCH: 28
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.65 MAXIMUM FORWARD VOLTAGE, DC

7534241P1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014840284

NSN

5961-01-484-0284

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7534241P1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014840284

NSN

5961-01-484-0284

MFG

LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS

HF3470

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014840284

NSN

5961-01-484-0284

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HF3470

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014840284

NSN

5961-01-484-0284

MFG

GENERAL INSTRUMENT CORP RECTIFIER DIV

JANTX1N6476

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014841238

NSN

5961-01-484-1238

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JANTX1N6476

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014841238

NSN

5961-01-484-1238

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6476
SPEC/STD CONTROLLING DATA:

HSMS-2802A2

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961014841291

NSN

5961-01-484-1291

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HSMS-2802A2

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961014841291

NSN

5961-01-484-1291

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CAPACITANCE RATING IN PICOFARADS: 2.0 MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: DETECTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL HEIGHT: 0.028 INCHES MINIMUM AND 0.037 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL WIDTH: 0.047 INCHES MINIMUM AND 0.055 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 3 PIN ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE

356A1450P60

TRANSISTOR

NSN, MFG P/N

5961014841351

NSN

5961-01-484-1351

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356A1450P60

TRANSISTOR

NSN, MFG P/N

5961014841351

NSN

5961-01-484-1351

MFG

BAE SYSTEMS CONTROLS INC.

Description

SPECIAL FEATURES: SURFACE MOUNT; LOGIC-LEVEL GATE DRIVE; RUGGEDIZED DEVICE DESIGN

IRLL110

TRANSISTOR

NSN, MFG P/N

5961014841351

NSN

5961-01-484-1351

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IRLL110

TRANSISTOR

NSN, MFG P/N

5961014841351

NSN

5961-01-484-1351

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

SPECIAL FEATURES: SURFACE MOUNT; LOGIC-LEVEL GATE DRIVE; RUGGEDIZED DEVICE DESIGN

MTC100N10EWP DIE

TRANSISTOR

NSN, MFG P/N

5961014841397

NSN

5961-01-484-1397

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MTC100N10EWP DIE

TRANSISTOR

NSN, MFG P/N

5961014841397

NSN

5961-01-484-1397

MFG

SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS

940-30720

TRANSISTOR

NSN, MFG P/N

5961014841539

NSN

5961-01-484-1539

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940-30720

TRANSISTOR

NSN, MFG P/N

5961014841539

NSN

5961-01-484-1539

MFG

POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 940-30720
MANUFACTURERS CODE: 04801
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:

JANTX2N6438

TRANSISTOR

NSN, MFG P/N

5961014841582

NSN

5961-01-484-1582

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JANTX2N6438

TRANSISTOR

NSN, MFG P/N

5961014841582

NSN

5961-01-484-1582

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6438
SPEC/STD CONTROLLING DATA:

2SD1330

TRANSISTOR

NSN, MFG P/N

5961014841713

NSN

5961-01-484-1713

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2SD1330

TRANSISTOR

NSN, MFG P/N

5961014841713

NSN

5961-01-484-1713

MFG

MATSUSHITA ELECTRIC CORP OF AMERICA M/S 7H-4

Description

CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 6.900 INCHES NOMINAL
OVERALL LENGTH: 8.600 INCHES NOMINAL
OVERALL WIDTH: 2.500 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM FORWARD POWER DISSIPATION, AVERAGE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 4.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN

300-6395495 ITEM 36

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014841729

NSN

5961-01-484-1729

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300-6395495 ITEM 36

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014841729

NSN

5961-01-484-1729

MFG

NAVAL SEA SYSTEMS COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 150.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.050 INCHES NOMINAL
OVERALL LENGTH: 2.285 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 0.55 MAXIMUM FORWARD VOLTAGE, DC AND 28.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS

SB540

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014841729

NSN

5961-01-484-1729

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SB540

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014841729

NSN

5961-01-484-1729

MFG

GENERAL INSTRUMENT CORP CORPORATE HEADQUARTERS

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 150.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.050 INCHES NOMINAL
OVERALL LENGTH: 2.285 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 0.55 MAXIMUM FORWARD VOLTAGE, DC AND 28.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS

48-02-122651

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014841874

NSN

5961-01-484-1874

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48-02-122651

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014841874

NSN

5961-01-484-1874

MFG

BOSCH SECURITY SYSTEMS INC D IV COMMUNICATIONS DIVISION USE CAGE CODE 25734 FOR CATALOGING.

Description

III END ITEM IDENTIFICATION: AMPLIFIER
SPECIAL FEATURES: FULL WAVE BRIDGE; 200 V; 25 AMP

Q20-0001-000

TRANSISTOR

NSN, MFG P/N

5961014843136

NSN

5961-01-484-3136

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Q20-0001-000

TRANSISTOR

NSN, MFG P/N

5961014843136

NSN

5961-01-484-3136

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION