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5961-01-337-6449

20 Products

BYV10-30

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013376449

NSN

5961-01-337-6449

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BYV10-30

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013376449

NSN

5961-01-337-6449

MFG

PHILIPS CIRCUIT ASSEMBLIES

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS MODULE
INCLOSURE MATERIAL: GLASS OR CERAMIC OR METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 2.6 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.8 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 28.0 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

C52D

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013373976

NSN

5961-01-337-3976

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C52D

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013373976

NSN

5961-01-337-3976

MFG

POWEREX INC

C385

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013373977

NSN

5961-01-337-3977

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C385

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013373977

NSN

5961-01-337-3977

MFG

POWEREX INC

6N511PC47

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013373978

NSN

5961-01-337-3978

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6N511PC47

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013373978

NSN

5961-01-337-3978

MFG

EATON AEROSPACE LLC DIV ELECTRICAL SENSING & CONTROLS

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KL357A
MANUFACTURERS CODE: 02750
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:

KL357A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013373978

NSN

5961-01-337-3978

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KL357A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013373978

NSN

5961-01-337-3978

MFG

DRS POWER & CONTROL TECHNOLOGIES INC.

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KL357A
MANUFACTURERS CODE: 02750
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:

6N511PC97

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013373979

NSN

5961-01-337-3979

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6N511PC97

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013373979

NSN

5961-01-337-3979

MFG

EATON AEROSPACE LLC DIV ELECTRICAL SENSING & CONTROLS

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KL357B
MANUFACTURERS CODE: 02750
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:

KL357B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013373979

NSN

5961-01-337-3979

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KL357B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013373979

NSN

5961-01-337-3979

MFG

DRS POWER & CONTROL TECHNOLOGIES INC.

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KL357B
MANUFACTURERS CODE: 02750
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:

2SD879

TRANSISTOR

NSN, MFG P/N

5961013375002

NSN

5961-01-337-5002

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2SD879

TRANSISTOR

NSN, MFG P/N

5961013375002

NSN

5961-01-337-5002

MFG

SANYO ELECTRIC CO

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 6625-01-212-3585 INSTRUMENT CONTROLLER
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 4.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 5.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 5.0 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 14.0 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER AND 30.0 MAXIMUM COLLECTOR TO BASE
~1: VOLTAGE/STATIC/EMITTER OPEN

922-6518-042

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013375003

NSN

5961-01-337-5003

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922-6518-042

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013375003

NSN

5961-01-337-5003

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

MA4P446

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013375003

NSN

5961-01-337-5003

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MA4P446

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013375003

NSN

5961-01-337-5003

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

UM9664

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013375003

NSN

5961-01-337-5003

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UM9664

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013375003

NSN

5961-01-337-5003

MFG

MICRO USPD INC

Description

FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

GZA20Z

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013375004

NSN

5961-01-337-5004

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GZA20Z

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013375004

NSN

5961-01-337-5004

MFG

SANYO ELECTRIC CO

Description

CURRENT RATING PER CHARACTERISTIC: 22.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
III END ITEM IDENTIFICATION: 6625-01-212-3585 INSTRUMENT CONTROLLER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 2.0 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.0 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 25.0 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 19.5 MINIMUM NOMINAL REGULATOR VOLTAGE AND 20.5 MAXIMUM NOMINAL REGULATOR VOLTAGE

P6KE39

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013375005

NSN

5961-01-337-5005

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P6KE39

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013375005

NSN

5961-01-337-5005

MFG

PROTEK DEVICES LP DBA PROTEK DEVICES

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL ON-STATE CURRENT, DC
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: 6625-01-212-3585 INSTRUMENT CONTROLLER
INCLOSURE MATERIAL: PLASTIC OR GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.165 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.315 INCHES MINIMUM AND 0.355 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.1 MINIMUM BREAKDOWN VOLTAGE, DC AND 42.9 MAXIMUM BREAKDOWN VOLTAGE, DC

1901-0896

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013375007

NSN

5961-01-337-5007

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1901-0896

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013375007

NSN

5961-01-337-5007

MFG

HEWLETT PACKARD CO

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 50.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: 6625-01-212-3585 INSTRUMENT CONTROLLER
INCLOSURE MATERIAL: GLASS OR PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REVERSE VOLTAGE, PEAK

RC100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013375007

NSN

5961-01-337-5007

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RC100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013375007

NSN

5961-01-337-5007

MFG

ELECTRONIC DEVICES INC DBA E D I

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 50.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: 6625-01-212-3585 INSTRUMENT CONTROLLER
INCLOSURE MATERIAL: GLASS OR PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REVERSE VOLTAGE, PEAK

96603

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013375008

NSN

5961-01-337-5008

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96603

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013375008

NSN

5961-01-337-5008

MFG

PRESTOLITE ELECTRIC INCORPORATED

Description

COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
III END ITEM IDENTIFICATION: 2320-01-318-9902 TRUCK,TRACTOR

96852

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013375009

NSN

5961-01-337-5009

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96852

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013375009

NSN

5961-01-337-5009

MFG

PRESTOLITE ELECTRIC INCORPORATED

Description

FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: 2320-01-318-9902 TRUCK,TRACTOR

Z4835

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013375736

NSN

5961-01-337-5736

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Z4835

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013375736

NSN

5961-01-337-5736

MFG

KROHN-HITE CORPORATION

Description

DESIGN CONTROL REFERENCE: Z4835
MANUFACTURERS CODE: 88865
SPECIAL FEATURES: DIODE,TC; END ITEM APPLICATION 7050-01-160-0154; SEMICONDUCTOR DEVICE,DIODE; CAGE 88865; P/N Z4835
THE MANUFACTURERS DATA:

ULS2021R-883

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013376136

NSN

5961-01-337-6136

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ULS2021R-883

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013376136

NSN

5961-01-337-6136

MFG

SPRAGUE ELECTRIC CO WORLD HQS

Description

III END ITEM IDENTIFICATION: RECEIVER-TRANSMITTER,RT-1476A/ ARC-201

101-9466

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013376449

NSN

5961-01-337-6449

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101-9466

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013376449

NSN

5961-01-337-6449

MFG

BEHLMAN ELECTRONICS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS MODULE
INCLOSURE MATERIAL: GLASS OR CERAMIC OR METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 2.6 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.8 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 28.0 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE