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5961-01-236-0976
20 Products
8-729-383-03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012360976
NSN
5961-01-236-0976
8-729-383-03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012360976
NSN
5961-01-236-0976
MFG
SONY ELECTRONICS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
13-1345237-1
TRANSISTOR
NSN, MFG P/N
5961012361098
NSN
5961-01-236-1098
MFG
GTE GOVERNMENT SYSTEMS CORP STRATEGIC SYSTEMS DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
Related Searches:
13-1345241-1
TRANSISTOR
NSN, MFG P/N
5961012361099
NSN
5961-01-236-1099
MFG
GTE GOVERNMENT SYSTEMS CORP STRATEGIC SYSTEMS DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.8 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE
Related Searches:
3T0044H-001
TRANSISTOR
NSN, MFG P/N
5961012361100
NSN
5961-01-236-1100
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.6 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE
Related Searches:
105462-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012361101
NSN
5961-01-236-1101
105462-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012361101
NSN
5961-01-236-1101
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV CUSTOMER SERVICES
Description
SPECIAL FEATURES: ITEM CONSISTS OF HEATSINK,ONE DIODE RECTIFIER,TWO WASHERS,ONE LUG AND ONE NUT
Related Searches:
13-1319516-7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012361102
NSN
5961-01-236-1102
13-1319516-7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012361102
NSN
5961-01-236-1102
MFG
GTE GOVERNMENT SYSTEMS CORP STRATEGIC SYSTEMS DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 11293
MFR SOURCE CONTROLLING REFERENCE: 13-1319516-7
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.9 NOMINAL REGULATOR VOLTAGE, DC AT MAXIMUM RATED CURRENT
Related Searches:
1N752A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012361102
NSN
5961-01-236-1102
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 11293
MFR SOURCE CONTROLLING REFERENCE: 13-1319516-7
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.9 NOMINAL REGULATOR VOLTAGE, DC AT MAXIMUM RATED CURRENT
Related Searches:
DZ841115C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012361102
NSN
5961-01-236-1102
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CRITICALITY CODE JUSTIFICATION: FEAT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 11293
MFR SOURCE CONTROLLING REFERENCE: 13-1319516-7
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.9 NOMINAL REGULATOR VOLTAGE, DC AT MAXIMUM RATED CURRENT
Related Searches:
JANTXV1N752A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012361102
NSN
5961-01-236-1102
JANTXV1N752A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012361102
NSN
5961-01-236-1102
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CRITICALITY CODE JUSTIFICATION: FEAT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 11293
MFR SOURCE CONTROLLING REFERENCE: 13-1319516-7
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.9 NOMINAL REGULATOR VOLTAGE, DC AT MAXIMUM RATED CURRENT
Related Searches:
13-1319516-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012361103
NSN
5961-01-236-1103
13-1319516-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012361103
NSN
5961-01-236-1103
MFG
GTE GOVERNMENT SYSTEMS CORP STRATEGIC SYSTEMS DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE, MX PEACEKEEPER; AIRCRAFT, EAGLE F-15
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 11293
MFR SOURCE CONTROLLING REFERENCE: 13-1319516-6
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.9 NOMINAL REGULATOR VOLTAGE, DC AT MAXIMUM RATED CURRENT
Related Searches:
1N751A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012361103
NSN
5961-01-236-1103
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE, MX PEACEKEEPER; AIRCRAFT, EAGLE F-15
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 11293
MFR SOURCE CONTROLLING REFERENCE: 13-1319516-6
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.9 NOMINAL REGULATOR VOLTAGE, DC AT MAXIMUM RATED CURRENT
Related Searches:
DZ841113B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012361103
NSN
5961-01-236-1103
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE, MX PEACEKEEPER; AIRCRAFT, EAGLE F-15
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 11293
MFR SOURCE CONTROLLING REFERENCE: 13-1319516-6
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.9 NOMINAL REGULATOR VOLTAGE, DC AT MAXIMUM RATED CURRENT
Related Searches:
NH13-1319516-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012361103
NSN
5961-01-236-1103
NH13-1319516-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012361103
NSN
5961-01-236-1103
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE, MX PEACEKEEPER; AIRCRAFT, EAGLE F-15
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 11293
MFR SOURCE CONTROLLING REFERENCE: 13-1319516-6
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.9 NOMINAL REGULATOR VOLTAGE, DC AT MAXIMUM RATED CURRENT
Related Searches:
1508460
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012361491
NSN
5961-01-236-1491
1508460
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012361491
NSN
5961-01-236-1491
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
ACCOMMODATED ITEM SECURING DEVICE TYPE: BRACKET
FEATURES PROVIDED: BASE PLATE AND BRACKET
MATERIAL: FIBER AND METAL
MOUNTING FACILITY TYPE AND QUANTITY: 4 UNTHREADED HOLE ALL MOUNTING FACILITIES
OVERALL HEIGHT: 0.120 INCHES NOMINAL
OVERALL LENGTH: 2.380 INCHES NOMINAL
OVERALL WIDTH: 1.880 INCHES NOMINAL
SPECIAL FEATURES: ITEM C/O CIRCUIT CARD AS DESCRIBED W/BRACKET AND TWO TURRET CONNECTORS FOR COMPONET MOUNTING.
STYLE DESIGNATOR: 12C IRREGULAR
UNTHREADED MOUNTING HOLE DIAMETER: 0.189 INCHES MINIMUM AND 0.192 INCHES MAXIMUM ALL MOUNTING FACILITIES
Related Searches:
44A258953P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012361502
NSN
5961-01-236-1502
44A258953P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012361502
NSN
5961-01-236-1502
MFG
BAE SYSTEMS CONTROLS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
DT505
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012361502
NSN
5961-01-236-1502
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
3700310
TRANSISTOR
NSN, MFG P/N
5961012362700
NSN
5961-01-236-2700
MFG
ITT TELECOM PRODUCTS CORP NETWORK SYSTEMS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
Related Searches:
SVT6766
TRANSISTOR
NSN, MFG P/N
5961012362700
NSN
5961-01-236-2700
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
Related Searches:
13-1319566-1
TRANSISTOR
NSN, MFG P/N
5961012363420
NSN
5961-01-236-3420
MFG
GTE GOVERNMENT SYSTEMS CORP STRATEGIC SYSTEMS DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
L532001109
TRANSISTOR
NSN, MFG P/N
5961012363421
NSN
5961-01-236-3421
MFG
LOCKHEED MARTIN LIBRASCOPE CORP
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
SPECIAL FEATURES: ELECTROSTATIC SENSITIVE DEVICE
