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5961-01-016-1936
20 Products
UM9327
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010161936
NSN
5961-01-016-1936
MFG
MICRO USPD INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: SPRUANCE CLASS DD (963); AUSTIN SHIP CLASS LPD-4 AMPHIBIOUS TRANSPORT DOCKS; AIRBORNE MOBILE DIR AIR SPT CTL (21D), (02 JUL 83) (AN/UYQ-3A); VIRGINIA CLASS CGN (41); T-AKR 310 CLASS; FORRESTAL CLASS CV; SIRIUS CLASS T-AFS 8; DEFENSE COMMUNICATIONS RADIO
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK
~1: (9 SYSTEMS); TICONDEROGA CLASS CG (47); TACTICAL AIR OPNS MODULE (AN/TYQ-(23)
Related Searches:
922-6251-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010161936
NSN
5961-01-016-1936
922-6251-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010161936
NSN
5961-01-016-1936
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: SPRUANCE CLASS DD (963); AUSTIN SHIP CLASS LPD-4 AMPHIBIOUS TRANSPORT DOCKS; AIRBORNE MOBILE DIR AIR SPT CTL (21D), (02 JUL 83) (AN/UYQ-3A); VIRGINIA CLASS CGN (41); T-AKR 310 CLASS; FORRESTAL CLASS CV; SIRIUS CLASS T-AFS 8; DEFENSE COMMUNICATIONS RADIO
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK
~1: (9 SYSTEMS); TICONDEROGA CLASS CG (47); TACTICAL AIR OPNS MODULE (AN/TYQ-(23)
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A5X387
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010161936
NSN
5961-01-016-1936
MFG
FEI MICROWAVE INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: SPRUANCE CLASS DD (963); AUSTIN SHIP CLASS LPD-4 AMPHIBIOUS TRANSPORT DOCKS; AIRBORNE MOBILE DIR AIR SPT CTL (21D), (02 JUL 83) (AN/UYQ-3A); VIRGINIA CLASS CGN (41); T-AKR 310 CLASS; FORRESTAL CLASS CV; SIRIUS CLASS T-AFS 8; DEFENSE COMMUNICATIONS RADIO
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK
~1: (9 SYSTEMS); TICONDEROGA CLASS CG (47); TACTICAL AIR OPNS MODULE (AN/TYQ-(23)
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MA47872
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010161936
NSN
5961-01-016-1936
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: SPRUANCE CLASS DD (963); AUSTIN SHIP CLASS LPD-4 AMPHIBIOUS TRANSPORT DOCKS; AIRBORNE MOBILE DIR AIR SPT CTL (21D), (02 JUL 83) (AN/UYQ-3A); VIRGINIA CLASS CGN (41); T-AKR 310 CLASS; FORRESTAL CLASS CV; SIRIUS CLASS T-AFS 8; DEFENSE COMMUNICATIONS RADIO
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK
~1: (9 SYSTEMS); TICONDEROGA CLASS CG (47); TACTICAL AIR OPNS MODULE (AN/TYQ-(23)
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A710668
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010161938
NSN
5961-01-016-1938
MFG
ROHDE & SCHWARZ INC
Description
DESIGN CONTROL REFERENCE: A710668
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 82199
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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2N3955
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010162714
NSN
5961-01-016-2714
2N3955
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010162714
NSN
5961-01-016-2714
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT 5TH TRANSISTOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-71
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR
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403714
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010162714
NSN
5961-01-016-2714
403714
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010162714
NSN
5961-01-016-2714
MFG
TARGET CORPORATION DBA TARGET
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT 5TH TRANSISTOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-71
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR
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2N5137
TRANSISTOR
NSN, MFG P/N
5961010162777
NSN
5961-01-016-2777
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.222 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5137 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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SC5961-0033-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010162779
NSN
5961-01-016-2779
SC5961-0033-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010162779
NSN
5961-01-016-2779
MFG
DRS ICAS, LLC
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.280 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 71.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
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TZV68A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010162779
NSN
5961-01-016-2779
MFG
SEMICON COMPONENTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.280 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 71.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
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40942
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010162781
NSN
5961-01-016-2781
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 33.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-8
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 MILLIWATTS MAXIMUM AVERAGE GATE POWER-FORWARD
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.136 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
TERMINAL LENGTH: 0.360 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE
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720025
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010162781
NSN
5961-01-016-2781
720025
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010162781
NSN
5961-01-016-2781
MFG
ENGINEERED MAGNETICS INC DBA AAP DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 33.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-8
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 MILLIWATTS MAXIMUM AVERAGE GATE POWER-FORWARD
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.136 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
TERMINAL LENGTH: 0.360 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
2N6336
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010162782
NSN
5961-01-016-2782
2N6336
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010162782
NSN
5961-01-016-2782
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 30043-RELEASE6355 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM OFF-STATE VOLTAGE, RMS TOTAL
Related Searches:
RELEASE6355
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010162782
NSN
5961-01-016-2782
RELEASE6355
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010162782
NSN
5961-01-016-2782
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 30043-RELEASE6355 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM OFF-STATE VOLTAGE, RMS TOTAL
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3111382-1
TRANSISTOR
NSN, MFG P/N
5961010163335
NSN
5961-01-016-3335
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: 3111382-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 82577
OVERALL DIAMETER: 0.234 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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SRF166H1
TRANSISTOR
NSN, MFG P/N
5961010163335
NSN
5961-01-016-3335
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: 3111382-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 82577
OVERALL DIAMETER: 0.234 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
7904386-00
TRANSISTOR
NSN, MFG P/N
5961010163336
NSN
5961-01-016-3336
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: UNIJUNCTION
MANUFACTURERS CODE: 90536
MFR SOURCE CONTROLLING REFERENCE: 7904386-00
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.237 INCHES MINIMUM AND 0.278 INCHES MAXIMUM
OVERALL WIDTH: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
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SPU22H
TRANSISTOR
NSN, MFG P/N
5961010163336
NSN
5961-01-016-3336
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: UNIJUNCTION
MANUFACTURERS CODE: 90536
MFR SOURCE CONTROLLING REFERENCE: 7904386-00
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.237 INCHES MINIMUM AND 0.278 INCHES MAXIMUM
OVERALL WIDTH: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
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3110281-2
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010163337
NSN
5961-01-016-3337
3110281-2
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010163337
NSN
5961-01-016-3337
MFG
RAYTHEON COMPANY
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL HEIGHT: 0.830 INCHES MAXIMUM
OVERALL LENGTH: 1.540 INCHES MAXIMUM
OVERALL WIDTH: 1.010 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 PIN
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JAN1N3016B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010163680
NSN
5961-01-016-3680
JAN1N3016B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010163680
NSN
5961-01-016-3680
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 37.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH RQMT OF DESC PRODUCTION STD NO. L01895, FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY
TERMINAL LENGTH: 1.000 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
