My Quote Request
No products added yet
5961-01-451-7459
20 Products
P/N 5-0140
TRANSISTOR
NSN, MFG P/N
5961014517459
NSN
5961-01-451-7459
MFG
ELMAN SRL
Description
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC: 62.5 WATTS MAXIMUM OFF-STATE POWER DISSIPATION
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 6.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
Related Searches:
JANTXVIN5650A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014513297
NSN
5961-01-451-3297
JANTXVIN5650A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014513297
NSN
5961-01-451-3297
MFG
JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81350
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXVIN5650A
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
6749W10P012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014513498
NSN
5961-01-451-3498
6749W10P012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014513498
NSN
5961-01-451-3498
MFG
AMETEK INC. D IV AEROSPACE & DEFENSE
Description
III END ITEM IDENTIFICATION: NAV-8A/B/CDCN E/I FSCM 97424
Related Searches:
8517979-402
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014513644
NSN
5961-01-451-3644
8517979-402
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014513644
NSN
5961-01-451-3644
MFG
SOLID STATE DEVICES INC.
Description
III END ITEM IDENTIFICATION: C-17A AIRCRAFT E/I FSCM 30043
Related Searches:
381547-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014513648
NSN
5961-01-451-3648
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: C12391 RSC DA E/I FSCM 75976
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
MMBZ5V6AL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014513648
NSN
5961-01-451-3648
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
III END ITEM IDENTIFICATION: C12391 RSC DA E/I FSCM 75976
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
11457009
BLOCK,MOUNTING,SEMI
NSN, MFG P/N
5961014513857
NSN
5961-01-451-3857
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: 0.239/0.249 DIA 90 DEG PORM 5 DEG CSK NS AND FS 0.269/0.279 IN. DIA 2 HOLES, 0.113/0.119 DIA BEFORE PLATING CBORE .37/.38 DIA .22 DEEP 6 HOLES EQ SP
MATERIAL: ALUMINUM ALLOY
OVERALL HEIGHT: 0.310 INCHES NOMINAL
OVERALL LENGTH: 2.700 INCHES NOMINAL
OVERALL WIDTH: 0.560 INCHES NOMINAL
SURFACE TREATMENT: ANODIZE
Related Searches:
IRFPE40
TRANSISTOR
NSN, MFG P/N
5961014514294
NSN
5961-01-451-4294
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 5.40 AMPERES MAXIMUM DRAIN CURRENT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
JANTXV1N5806US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014515065
NSN
5961-01-451-5065
JANTXV1N5806US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014515065
NSN
5961-01-451-5065
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N5806US
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
910C352-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014515591
NSN
5961-01-451-5591
MFG
SUNDSTRAND CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
M5908ST
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014515596
NSN
5961-01-451-5596
M5908ST
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014515596
NSN
5961-01-451-5596
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES REVERSE CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.95 FORWARD VOLTAGE, PEAK
III END ITEM IDENTIFICATION: C130-J HERCULES AIRCRAFT
MATERIAL: SILICON
MOUNTING METHOD: BASE
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS AND -65.0 TO 150.0 DEG CELSIUS
OVERALL LENGTH: 1.175 INCHES MINIMUM AND 1.195 INCHES MAXIMUM
OVERALL WIDTH: 0.495 INCHES MINIMUM AND 0.505 INCHES MAXIMUM
PRECIOUS MATERIAL AND LOCATION: DISC SILVER
SPECIAL FEATURES: REVERSE CURRENT IS 100 UA (MAX) AT REVERSE VOLTAGE OF 400 VDC, TA=100 DEGREES CELSIUS; FORWARD VOLTAGE IS 0.95 VDC (MAX) AT FORWARD CURRENT=1.5A; DIE TYPE IS MPR080, POLARITY IS CATHODETO STUD; 400VDC RECTIFIER
TERMINAL TYPE AND QUANTITY: 1 TERMINAL LUG
Related Searches:
1N5968
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014515604
NSN
5961-01-451-5604
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
648982-901
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014515604
NSN
5961-01-451-5604
648982-901
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014515604
NSN
5961-01-451-5604
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
77A105259P001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014516075
NSN
5961-01-451-6075
77A105259P001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014516075
NSN
5961-01-451-6075
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
III END ITEM IDENTIFICATION: RADAR SYSTEM, RRP-117
Related Searches:
77A109714P001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014516086
NSN
5961-01-451-6086
77A109714P001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014516086
NSN
5961-01-451-6086
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
III END ITEM IDENTIFICATION: RADAR SYSTEM, RRP-117
OVERALL HEIGHT: 0.690 INCHES MINIMUM
OVERALL LENGTH: 1.197 INCHES NOMINAL
OVERALL WIDTH: 0.875 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
2001119-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014516162
NSN
5961-01-451-6162
2001119-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014516162
NSN
5961-01-451-6162
MFG
M P D TECHNOLOGIES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N5665AC
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014516176
NSN
5961-01-451-6176
MFG
SEMICON COMPONENTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
OVERALL WIDTH: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.025 INCHES MINIMUM AND 0.035 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
UES704HR2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014517326
NSN
5961-01-451-7326
MFG
MICRO USPD INC
Description
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.920 INCHES MINIMUM AND 0.935 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.420 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: HIGH RELIABILITY(HR) SCREENING PREFORMED ON 100 PCT OF THE DEVICES
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
91782073
TRANSISTOR
NSN, MFG P/N
5961014517459
NSN
5961-01-451-7459
MFG
THALES
Description
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC: 62.5 WATTS MAXIMUM OFF-STATE POWER DISSIPATION
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 6.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
Related Searches:
DU2820S
TRANSISTOR
NSN, MFG P/N
5961014517459
NSN
5961-01-451-7459
MFG
M/A-COM TECHNOLOGY SOLUTIONS INC. DBA COMMERCIAL ELECTRONICS PHO DIV POWER HYBRIDS OPERATION
Description
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC: 62.5 WATTS MAXIMUM OFF-STATE POWER DISSIPATION
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 6.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
