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5961-01-535-3871
20 Products
DSS2X61-0045A
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015353871
NSN
5961-01-535-3871
DSS2X61-0045A
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015353871
NSN
5961-01-535-3871
MFG
IXYS CORPORATION
Description
III END ITEM IDENTIFICATION: RADAR AN/FPS-77
TERMINAL TYPE AND QUANTITY: 1 TAB
Related Searches:
JANTX2N2619A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961015342313
NSN
5961-01-534-2313
JANTX2N2619A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961015342313
NSN
5961-01-534-2313
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 4.70 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N2619A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: NSN 1140-01-087-9844; LAUNCHING STATION, GUIDED MISSILE, SEMITRAILER MOUNCTER; W/S: MISSILE, PATROIT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/168
OVERALL LENGTH: 1.124 INCHES MINIMUM AND 1.308 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD QUANTITY PER INCH: 32
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
MMSZ4681T1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015342394
NSN
5961-01-534-2394
MMSZ4681T1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015342394
NSN
5961-01-534-2394
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
SPECIAL FEATURES: 2.4 ACTIVE V SOD-123
Related Searches:
1N4005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015342667
NSN
5961-01-534-2667
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES NOMINAL PEAK NONREPETITIVE SURGE CURRENT
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: JET ENGINE TEST INSTRUMENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: INAVY: DIODE; CAGE: 1A 50V AXIAL LEAD STANDARD RECOVERY RECTIFIER
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.079 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.161 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.028 INCHES MINIMUM AND 0.034 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 60.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
568-0141
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015342667
NSN
5961-01-534-2667
MFG
ALLIED ELECTRONICS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES NOMINAL PEAK NONREPETITIVE SURGE CURRENT
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: JET ENGINE TEST INSTRUMENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: INAVY: DIODE; CAGE: 1A 50V AXIAL LEAD STANDARD RECOVERY RECTIFIER
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.079 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.161 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.028 INCHES MINIMUM AND 0.034 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 60.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE
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LEX-8526-01
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015344580
NSN
5961-01-534-4580
LEX-8526-01
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015344580
NSN
5961-01-534-4580
MFG
L-3 COMMUNICATIONS INTEGRATED SYSTEMS L.P. DBA INTEGRATED SYSTEMS-SPECIAL SUPPORT PROGRAMS DIVISION DIV SSPD ADVANCED TECHNICAL SYSTEMS SUPPORT
Description
III END ITEM IDENTIFICATION: ALE47CMDSMC10
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TERMINAL BLOCK DIODE
MAJOR COMPONENTS: DIODES 4
MOUNTING CONFIGURATION: PLUG IN MOUNTING
OVERALL HEIGHT: 1.310 INCHES NOMINAL
OVERALL LENGTH: 0.850 INCHES NOMINAL
OVERALL WIDTH: 0.390 INCHES NOMINAL
SPECIAL FEATURES: HOUSING POLYETHERMIDE,COLOR:BLACK
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TJE120916
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015344580
NSN
5961-01-534-4580
TJE120916
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015344580
NSN
5961-01-534-4580
MFG
AMPHENOL PCD INC.
Description
III END ITEM IDENTIFICATION: ALE47CMDSMC10
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TERMINAL BLOCK DIODE
MAJOR COMPONENTS: DIODES 4
MOUNTING CONFIGURATION: PLUG IN MOUNTING
OVERALL HEIGHT: 1.310 INCHES NOMINAL
OVERALL LENGTH: 0.850 INCHES NOMINAL
OVERALL WIDTH: 0.390 INCHES NOMINAL
SPECIAL FEATURES: HOUSING POLYETHERMIDE,COLOR:BLACK
Related Searches:
1N4002
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015344860
NSN
5961-01-534-4860
1N4002
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015344860
NSN
5961-01-534-4860
MFG
SEMICONDUCTOR COMPONENTS INC DBA SCI
Description
III END ITEM IDENTIFICATION: POWER DISTRIBUTION MODULE
Related Searches:
11472223-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015345078
NSN
5961-01-534-5078
11472223-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015345078
NSN
5961-01-534-5078
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 88.00 AMPERES NOMINAL DETECTOR SIGNAL CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: PATRIOT GUIDED MISSILE SYSTEM
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 2.000 INCHES NOMINAL
OVERALL WIDTH: 1.500 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 595.0 WATTS NOMINAL ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 1000.0 NOMINAL DRAIN TO GATE VOLTAGE
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ECG5529
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015346483
NSN
5961-01-534-6483
MFG
DIGITRON ELECTRONIC CORP
Description
III END ITEM IDENTIFICATION: AIRPORT SURVEILLANCE RADAR 9 (ASR9)
Related Searches:
SS7048-5
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015346930
NSN
5961-01-534-6930
SS7048-5
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015346930
NSN
5961-01-534-6930
MFG
SIKORSKY AIRCRAFT CORPORATION
Description
III END ITEM IDENTIFICATION: NSN 1520-01-492-6324; HELICOPTER, UTILITY; W/S: HELICOPTER, BLACKHAWK AH-60
III PART NAME ASSIGNED BY CONTROLLING AGENCY: IN-LINE SUPPRESSOR ASSEMBLY
III USAGE DESIGN: SUPPRESS VOLTAGE TRANSLENTS PRODUCED WHEN SWITCHING INDUCTIVE DEVICES
MAJOR COMPONENTS: ZENER DIODE AND BLOCKING DIODE
SPECIAL FEATURES: HEAT SHINK SPLICE CAP AFTER SOLDERING SEMICONDUCTOR TWISTED WIRES; USE ZENER DIODE: P/N UZ836HR AND BLOCKING DIODE P/N JANTX1N649-1
Related Searches:
11477185
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015349492
NSN
5961-01-534-9492
11477185
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015349492
NSN
5961-01-534-9492
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
III END ITEM IDENTIFICATION: PART NO. 11472076 FOR PATRIOT
MATERIAL: ALUMINUM ALLOY 5052
MATERIAL DOCUMENT AND CLASSIFICATION: ASTM B209 ASSN STD SINGLE MATERIAL RESPONSE OR QQ-A-250/8 FED SPEC SINGLE MATERIAL RESPONSE
PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE MOUNTING BRACKET
SURFACE TREATMENT: CHROMATE
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: MIL-C-5541, CL 1A MIL SPEC SINGLE TREATMENT RESPONSE
Related Searches:
12478942
TRANSISTOR
NSN, MFG P/N
5961015349738
NSN
5961-01-534-9738
MFG
U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM
Description
TRANSISTOR
Related Searches:
JANTX2N6851
TRANSISTOR
NSN, MFG P/N
5961015349738
NSN
5961-01-534-9738
MFG
HARRIS CORP SEMICONDUCTOR SECTOR
Description
TRANSISTOR
Related Searches:
U100355-000
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015350600
NSN
5961-01-535-0600
U100355-000
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015350600
NSN
5961-01-535-0600
MFG
L-3 COMMUNICATIONS CORPORATION DBA L3 COMMUNICATIONS DISPLAY SYSTEMS DIV DISPLAY SYSTEMS
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SCHOTTKY DIODE NETWORK
SPECIAL FEATURES: PDN001 PRE-TINNING REQUIRED
Related Searches:
CXT4033
TRANSISTOR
NSN, MFG P/N
5961015351423
NSN
5961-01-535-1423
MFG
CENTRAL SEMICONDUCTOR CORP DIV CENTRAL STATE INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SURFACE MOUNT PNP SILICON TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
OVERALL HEIGHT: 0.055 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
OVERALL LENGTH: 0.173 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL WIDTH: 0.146 INCHES MINIMUM AND 0.177 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SOT-89 CASE; MANUFACTURED BY THE EPITAXIAL PLANAR PROCESS, EPOXY MOLDED; DESIGNED FOR HIGH CURRENT GENERAL PURPOSE AMPLIFIER APPLICATIONS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
CXT3019
TRANSISTOR
NSN, MFG P/N
5961015351428
NSN
5961-01-535-1428
MFG
CENTRAL SEMICONDUCTOR CORP DIV CENTRAL STATE INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SURFACE MOUNT NPN SILICON TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
OVERALL HEIGHT: 0.055 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
OVERALL LENGTH: 0.173 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL WIDTH: 0.146 INCHES MINIMUM AND 0.177 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SOT-89 CASE; MANUFACTURED BY THE EPITAXIAL PLANAR PROCESS, EPOXY MOLDED; DESIGNED FOR HIGH CURRENT GENERAL PURPOSE AMPLIFIER APPLICATIONS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
OP505D
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961015352194
NSN
5961-01-535-2194
MFG
OPTEK TECHNOLOGY INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.55 MICROAMPERES MINIMUM COLLECTOR CURRENT, DC
III PART NAME ASSIGNED BY CONTROLLING AGENCY: INFRARED SELECTED NPN SILICON PHOOTRANSISTOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER TO COLLECTOR, BASE OPEN
Related Searches:
BR3506
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015352722
NSN
5961-01-535-2722
BR3506
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015352722
NSN
5961-01-535-2722
MFG
EIC SEMICONDUCTOR INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 FORWARD VOLTAGE, AVERAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: BOLT
SPECIAL FEATURES: HIGH CURRENT CAPABILITY; LOW REVERSE CURRENT
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD
Related Searches:
600-42100
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015353566
NSN
5961-01-535-3566
600-42100
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015353566
NSN
5961-01-535-3566
MFG
POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP
Description
III END ITEM IDENTIFICATION: MC-SABT,(SSGN);SABT, STATIC AUTOMATIC BUS TRANSFER
III PART NAME ASSIGNED BY CONTROLLING AGENCY: (INAVY) SCT ASSEMBLY
