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5961-01-519-0873
20 Products
SM12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015190873
NSN
5961-01-519-0873
MFG
SEMTECH CORPORATION
Description
CAPACITANCE RATING IN PICOFARADS: 120.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.034 INCHES MINIMUM AND 0.040 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.119 INCHES MAXIMUM
OVERALL WIDTH: 0.083 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 WATTS NOMINAL PEAK PULSE OUTPUT POWER
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.00 NOMINAL REVERSE VOLTAGE, DC
Related Searches:
1SMB6.0A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015189354
NSN
5961-01-518-9354
MFG
CENTRAL SEMICONDUCTOR CORP DIV CENTRAL STATE INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL ON-STATE CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 2.2 MILLIMETERS MINIMUM AND 2.5 MILLIMETERS MAXIMUM
OVERALL LENGTH: 5.1 MILLIMETERS MINIMUM AND 5.6 MILLIMETERS MAXIMUM
OVERALL WIDTH: 3.3 MILLIMETERS MINIMUM AND 3.8 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.00 WATTS NOMINAL PEAK OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.7 MINIMUM REGULATOR VOLTAGE, DC AND 7.7 MAXIMUM REGULATOR VOLTAGE, DC
Related Searches:
JANTX1N6642US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015189374
NSN
5961-01-518-9374
JANTX1N6642US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015189374
NSN
5961-01-518-9374
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CAPACITANCE RATING IN PICOFARADS: 5.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES NOMINAL AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 50-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6642US
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
FDN337N
TRANSISTOR
NSN, MFG P/N
5961015189376
NSN
5961-01-518-9376
MFG
FAIRCHILD SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.20 AMPERES NOMINAL DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.940 INCHES NOMINAL
OVERALL LENGTH: 0.560 INCHES NOMINAL
OVERALL WIDTH: 1.400 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.560 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL DRAIN TO SOURCE VOLTAGE
Related Searches:
LCDA05
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015189377
NSN
5961-01-518-9377
MFG
SEMTECH CORPORATION
Description
CAPACITANCE RATING IN PICOFARADS: 5.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES NOMINAL PEAK PULSE CURRENT
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SO-8
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.053 INCHES MINIMUM AND 0.069 INCHES MAXIMUM
OVERALL LENGTH: 0.188 INCHES MINIMUM AND 0.197 INCHES MAXIMUM
OVERALL WIDTH: 0.228 INCHES MINIMUM AND 0.244 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 WATTS NOMINAL PEAK PULSE OUTPUT POWER
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 8 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 NOMINAL WORKING PEAK REVERSE VOLTAGE
Related Searches:
MA4ST409-287T
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015189378
NSN
5961-01-518-9378
MA4ST409-287T
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015189378
NSN
5961-01-518-9378
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CAPACITANCE RATING IN PICOFARADS: 47.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC
FUNCTION FOR WHICH DESIGNED: VARACTOR DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.048 INCHES NOMINAL
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.119 INCHES MAXIMUM
OVERALL WIDTH: 0.047 INCHES MINIMUM AND 0.056 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.024 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 NOMINAL REVERSE VOLTAGE, DC
Related Searches:
JANTX1N6162A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015189803
NSN
5961-01-518-9803
JANTX1N6162A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015189803
NSN
5961-01-518-9803
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 15.40 AMPERES MAXIMUM PEAK PULSE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6162A
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: MMRT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL DIAMETER: 0.135 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS MAXIMUM REPETITIVE PEAK REVERSE TRANSIENT POWER
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 64.6 MINIMUM BREAKDOWN VOLTAGE, DC AND 51.7 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
MMBZ5239B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015189908
NSN
5961-01-518-9908
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 MICROAMPERES NOMINAL REVERSE CURRENT, INSTANTANEOUS AND 10.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ZENER DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL OFF-STATE POWER DISSIPATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.1 NOMINAL REGULATOR VOLTAGE, DC AND 0.9 NOMINAL FORWARD VOLTAGE, DC
Related Searches:
MMBZ5257B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015189909
NSN
5961-01-518-9909
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES NOMINAL REVERSE CURRENT, INSTANTANEOUS AND 10.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ZENER DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL OFF-STATE POWER DISSIPATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 NOMINAL REGULATOR VOLTAGE, DC AND 0.9 NOMINAL FORWARD VOLTAGE, DC
Related Searches:
60MT80KB
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015190152
NSN
5961-01-519-0152
60MT80KB
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015190152
NSN
5961-01-519-0152
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
A-56879
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015190152
NSN
5961-01-519-0152
A-56879
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015190152
NSN
5961-01-519-0152
MFG
BOGUE SYSTEMS INC .
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
2261014
TRANSISTOR
NSN, MFG P/N
5961015190504
NSN
5961-01-519-0504
MFG
HAGENUK MARINEKOMMUNIKATION GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: GERMAN FRIGATE TYPE F 124, RADIO COMMUNICATION EQUIPMENT, TRANSMITTER/RECEIVER, 2261014, HAGENUK MARINEKAMMUNIKATION GMBH
INTERNAL JUNCTION CONFIGURATION: NPN
OVERALL HEIGHT: 0.229 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
OVERALL LENGTH: 0.960 INCHES MINIMUM AND 0.980 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 320.0 WATTS NOMINAL OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
MRF428
TRANSISTOR
NSN, MFG P/N
5961015190504
NSN
5961-01-519-0504
MFG
TYCO ELECTRONICS CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: GERMAN FRIGATE TYPE F 124, RADIO COMMUNICATION EQUIPMENT, TRANSMITTER/RECEIVER, 2261014, HAGENUK MARINEKAMMUNIKATION GMBH
INTERNAL JUNCTION CONFIGURATION: NPN
OVERALL HEIGHT: 0.229 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
OVERALL LENGTH: 0.960 INCHES MINIMUM AND 0.980 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 320.0 WATTS NOMINAL OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
MMBZ5250B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015190514
NSN
5961-01-519-0514
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES NOMINAL REVERSE CURRENT, INSTANTANEOUS AND 10.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ZENER DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL OFF-STATE POWER DISSIPATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL REGULATOR VOLTAGE, DC AND 0.9 NOMINAL FORWARD VOLTAGE, DC
Related Searches:
10603
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015190706
NSN
5961-01-519-0706
MFG
BASLER ELECTRIC COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
III END ITEM IDENTIFICATION: VOLTAGE REGULATOR, 658-EN-1B
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
09942
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961015190708
NSN
5961-01-519-0708
MFG
BASLER ELECTRIC COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES NOMINAL ON-STATE CURRENT, AVERAGE
III END ITEM IDENTIFICATION: VOLTAGE REGULATOR, 658-EN-1B
INCLOSURE MATERIAL: METAL
Related Searches:
9-2521-06-100
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015190712
NSN
5961-01-519-0712
9-2521-06-100
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015190712
NSN
5961-01-519-0712
MFG
BASLER ELECTRIC COMPANY
Description
III END ITEM IDENTIFICATION: VOLTAGE REGULATOR, 658-EN-1B
Related Searches:
10755
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015190715
NSN
5961-01-519-0715
MFG
BASLER ELECTRIC COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
III END ITEM IDENTIFICATION: VOLTAGE REGULATOR, 658-EN-1B
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
19215
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015190719
NSN
5961-01-519-0719
MFG
BASLER ELECTRIC COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
III END ITEM IDENTIFICATION: VOLTAGE REGULATOR, 658-EN-1B
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
10189
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015190723
NSN
5961-01-519-0723
MFG
BASLER ELECTRIC COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
III END ITEM IDENTIFICATION: VOLTAGE REGULATOR, 658-EN-1B
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
