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5961-01-532-7908
20 Products
JANTX2N5153
TRANSISTOR
NSN, MFG P/N
5961015327908
NSN
5961-01-532-7908
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N5153
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-205
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/545
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.740 INCHES MINIMUM AND 1.010 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: USED IN HIGH-SPEED POWER-SWITCHING APPLICATIONS
TERMINAL CIRCLE DIAMETER: 0.016 INCHES MINIMUM AND 0.021 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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MTP30P06V
TRANSISTOR
NSN, MFG P/N
5961015319618
NSN
5961-01-531-9618
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES NOMINAL DRAIN CURRENT
III END ITEM IDENTIFICATION: 4935011360233 SHOP EQUIPMENT, GUIDED MISSILE SYSTEM; WS/MISSILE,PATROIT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.070 INCHES MINIMUM AND 1.182 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS NOMINAL OFF-STATE POWER DISSIPATION
TERMINAL CIRCLE DIAMETER: 0.018 INCHES MINIMUM AND 0.025 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 NOMINAL DRAIN TO SOURCE VOLTAGE
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3671224E396-5
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961015320148
NSN
5961-01-532-0148
MFG
NORTHROP GRUMMAN CORPORATION DBA INTEGRATED SYSTEMS SECTOR DIV INTEGRATED SYSTEMS SECTOR
Description
SEMICONDUCTOR DEVIC
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0N634294-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015321999
NSN
5961-01-532-1999
0N634294-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015321999
NSN
5961-01-532-1999
MFG
NATIONAL SECURITY AGENCY
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: KG-75A ULTRAFASTLANE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE,SCHOTTKY
INCLOSURE MATERIAL: PLASTIC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CRITICAL APPLICATION,70V,1MA,.1W
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HSMS-2800
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015321999
NSN
5961-01-532-1999
MFG
AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: KG-75A ULTRAFASTLANE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE,SCHOTTKY
INCLOSURE MATERIAL: PLASTIC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CRITICAL APPLICATION,70V,1MA,.1W
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MMSZ4697T1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015323553
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5961-01-532-3553
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015323553
NSN
5961-01-532-3553
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL FORWARD CURRENT, AVERAGE
III END ITEM IDENTIFICATION: NSN: 4935-01-136-0233; SHOP EQUIPMENT, GUIDED MISSILE SYSTEM; WS: MISSILE, PATRIOT,
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.037 INCHES MINIMUM AND 0.053 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.152 INCHES MAXIMUM
OVERALL WIDTH: 0.055 INCHES MINIMUM AND 0.071 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS NOMINAL AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.5 MINIMUM NOMINAL REGULATOR VOLTAGE AND 10.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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MTP12P10
TRANSISTOR
NSN, MFG P/N
5961015323573
NSN
5961-01-532-3573
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM DRAIN CURRENT
FUNCTION FOR WHICH DESIGNED: SWITCHING
III END ITEM IDENTIFICATION: NSN 4935-01-136-0233; SHOP EQUIPMENT, GUIDED MISSILE SYSTEM; W/S; MISSILE, PATRIOT
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 1.070 INCHES MINIMUM AND 1.182 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: POWER MOSFET, 12 AMPS, 100 VOLTS; P-CHANNEL TO -220
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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MTP50P03HDL
TRANSISTOR
NSN, MFG P/N
5961015323576
NSN
5961-01-532-3576
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM DRAIN CURRENT
FUNCTION FOR WHICH DESIGNED: SWITCHING
III END ITEM IDENTIFICATION: NSN 4935-01-136-0233; SHOP EQUIPMENT, GUIDED MISSILE SYSTEM; W/S; MISSILE, PATRIOT
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 1.070 INCHES MINIMUM AND 1.182 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: POWER MOSFET, 50 AMPS, 30 VOLTS, LOGIC LEVEL; P-CHANNEL TO -220
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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MAX620CPN
TRANSISTOR
NSN, MFG P/N
5961015324155
NSN
5961-01-532-4155
MFG
DALLAS SEMICONDUCTOR CORPORATION DBA MAXIM DALLAS DIRECT
Description
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
OVERALL LENGTH: 0.084 INCHES NOMINAL
OVERALL WIDTH: 0.113 INCHES NOMINAL
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IRKT162-12
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961015324191
NSN
5961-01-532-4191
IRKT162-12
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961015324191
NSN
5961-01-532-4191
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 160.00 AMPERES NOMINAL ON-STATE CURRENT, AVERAGE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DOUBLER CIRCUIT POSITIVE PHASE CONTROL THYRISTOR/THYRISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 1.004 INCHES NOMINAL
OVERALL LENGTH: 3.700 INCHES NOMINAL
OVERALL WIDTH: 1.348 INCHES NOMINAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
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1N4007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015324530
NSN
5961-01-532-4530
MFG
FAIRCHILD SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
III END ITEM IDENTIFICATION: NSN 4935-01-136-0233; SHOP EQUIPMENT, GUIDED MISSILE SYSTEM; WEAPON SYSTEM: MISSILE, PATRIOT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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13589482
TRANSISTOR
NSN, MFG P/N
5961015324773
NSN
5961-01-532-4773
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES NOMINAL DRAIN CURRENT
FUNCTION FOR WHICH DESIGNED: SWITCHING
III END ITEM IDENTIFICATION: NSN 4935-01-136-0233; SHOP EQUIPMENT, GUIDED MISSILE SYSTEM; W/S; MISSILE, PATRIOT
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 1.130 INCHES NOMINAL
OVERALL WIDTH: 0.039 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TMOS V, POWER FIELD EFFECT TRANSISTOR; P-CHANNEL ENHANCEMENT-MODE SILICON GATE
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 NOMINAL DRAIN TO SOURCE VOLTAGE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015325363
NSN
5961-01-532-5363
MFG
GENERAL SEMICONDUCTOR INC
Description
III END ITEM IDENTIFICATION: AIR TRAFFIC CONTROL BEACON INTERROGATOR 6 (ATCBI6)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: FAST RECTIFIER
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015325363
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5961-01-532-5363
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015325363
NSN
5961-01-532-5363
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
III END ITEM IDENTIFICATION: AIR TRAFFIC CONTROL BEACON INTERROGATOR 6 (ATCBI6)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: FAST RECTIFIER
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SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
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SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015325432
NSN
5961-01-532-5432
MFG
RADIO-HOLLAND U S A INC.
Description
III END ITEM IDENTIFICATION: RECEIVER,NAVTEX 2B (U5942)MSC,TLX-845060
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015325939
NSN
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015325939
NSN
5961-01-532-5939
MFG
NAVAL SEA SYSTEMS COMMAND
Description
III END ITEM IDENTIFICATION: MK49MOD1&3,LAUNCHING SYSTEM,GUIDED MISSILE
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SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015326630
NSN
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13589512
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NSN, MFG P/N
5961015326630
NSN
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U S ARMY AVIATION AND MISSILE COMMAND
Description
III END ITEM IDENTIFICATION: NSN 4935-01-136-0233; SHOP EQUIPMENT, GUIDED MISSILE SYSTEM; W/S: MISSILE, PATROIT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: CCA, ADAPTER, 12V LED
MAJOR COMPONENTS: RESISTOR, 51 OHM; DIODE, SENER, 9.1V
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BZX79C18
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015326787
NSN
5961-01-532-6787
MFG
FAIRCHILD SEMICONDUCTOR CORPORATION
Description
CAPACITANCE RATING IN PICOFARADS: 47.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.8 MINIMUM NOMINAL REGULATOR VOLTAGE AND 19.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
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JANTX1N6463US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015327865
NSN
5961-01-532-7865
JANTX1N6463US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015327865
NSN
5961-01-532-7865
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6463US
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/551
OVERALL DIAMETER: 0.137 INCHES MINIMUM AND 0.148 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.6 NOMINAL BREAKDOWN VOLTAGE, DC AND 12.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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JANTX1N6462US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015327874
NSN
5961-01-532-7874
JANTX1N6462US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015327874
NSN
5961-01-532-7874
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6462US
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/551
OVERALL DIAMETER: 0.137 INCHES MINIMUM AND 0.148 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.5 NOMINAL BREAKDOWN VOLTAGE, DC AND 6.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
