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5961-01-469-1973

20 Products

70HFR140

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014691973

NSN

5961-01-469-1973

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70HFR140

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014691973

NSN

5961-01-469-1973

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

FEATURES PROVIDED: REVERSE POLARITY
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.420 INCHES MINIMUM AND 1.460 INCHES MAXIMUM
OVERALL WIDTH: 0.680 INCHES NOMINAL
THREAD QUANTITY PER INCH: 28
THREAD SERIES DESIGNATOR: UNF

IRF9530S

TRANSISTOR

NSN, MFG P/N

5961014691975

NSN

5961-01-469-1975

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IRF9530S

TRANSISTOR

NSN, MFG P/N

5961014691975

NSN

5961-01-469-1975

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
SPECIAL FEATURES: SURFACE MOUNT; DYNAMIC DV/DT RATING;175 DEG C OPERATING TEMP; FAST SWITCHING

6CWQ06F

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014691976

NSN

5961-01-469-1976

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6CWQ06F

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014691976

NSN

5961-01-469-1976

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

FEATURES PROVIDED: HIGH FREQUENCY
FUNCTION FOR WHICH DESIGNED: SWITCHING
OVERALL HEIGHT: 0.094 INCHES MAXIMUM
OVERALL LENGTH: 0.235 INCHES MINIMUM AND 0.245 INCHES MAXIMUM
OVERALL WIDTH: 0.252 INCHES MINIMUM AND 0.264 INCHES MAXIMUM
SPECIAL FEATURES: 6.6 AMP; D-PAK OUTLINE; CENTER TAP CONFIGURATION; SMALL FOOT PRINT, SURFACE MOUNTABLE; LOW FORWARD VOLTAGE DROP; HIGH FREQ OPERATION; GUARD RING FOR ENHANCED RUGGEDNESS AND LONG TERM RELIABILITY

IRFY240CM

TRANSISTOR

NSN, MFG P/N

5961014692378

NSN

5961-01-469-2378

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IRFY240CM

TRANSISTOR

NSN, MFG P/N

5961014692378

NSN

5961-01-469-2378

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: AMPLIFIER AND SWITCHING
SPECIAL FEATURES: CERAMIC EYELETS; ELECTRICALLY ISOLATED; 200 VOLT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL DRAIN SUPPLY VOLTAGE

JANTXV2N7236

TRANSISTOR,AIRCRAFT

NSN, MFG P/N

5961014692964

NSN

5961-01-469-2964

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JANTXV2N7236

TRANSISTOR,AIRCRAFT

NSN, MFG P/N

5961014692964

NSN

5961-01-469-2964

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

4989B REFERENCE DM1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014696070

NSN

5961-01-469-6070

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4989B REFERENCE DM1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014696070

NSN

5961-01-469-6070

MFG

W & H NELSON LTD

9-1772-00-100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014696070

NSN

5961-01-469-6070

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9-1772-00-100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014696070

NSN

5961-01-469-6070

MFG

BASLER ELECTRIC COMPANY

4989B REFERENCE DM2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014696071

NSN

5961-01-469-6071

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4989B REFERENCE DM2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014696071

NSN

5961-01-469-6071

MFG

W & H NELSON LTD

9-1772-00-101

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014696071

NSN

5961-01-469-6071

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9-1772-00-101

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014696071

NSN

5961-01-469-6071

MFG

BASLER ELECTRIC COMPANY

12281179

TRANSISTOR

NSN, MFG P/N

5961014697311

NSN

5961-01-469-7311

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12281179

TRANSISTOR

NSN, MFG P/N

5961014697311

NSN

5961-01-469-7311

MFG

U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 19200
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 200.0 DEG CELSIUS CASE
MFR SOURCE CONTROLLING REFERENCE: 12903208
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 0.962 INCHES MAXIMUM
OVERALL WIDTH: 0.840 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 35.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HCI
TERMINAL LENGTH: 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 75.0 MAXIMUM WORKING PEAK OFF-STATE VOLTAGE

12903208

TRANSISTOR

NSN, MFG P/N

5961014697311

NSN

5961-01-469-7311

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12903208

TRANSISTOR

NSN, MFG P/N

5961014697311

NSN

5961-01-469-7311

MFG

MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 19200
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 200.0 DEG CELSIUS CASE
MFR SOURCE CONTROLLING REFERENCE: 12903208
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 0.962 INCHES MAXIMUM
OVERALL WIDTH: 0.840 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 35.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HCI
TERMINAL LENGTH: 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 75.0 MAXIMUM WORKING PEAK OFF-STATE VOLTAGE

NH12903208

TRANSISTOR

NSN, MFG P/N

5961014697311

NSN

5961-01-469-7311

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NH12903208

TRANSISTOR

NSN, MFG P/N

5961014697311

NSN

5961-01-469-7311

MFG

DLA LAND AND MARITIME

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 19200
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 200.0 DEG CELSIUS CASE
MFR SOURCE CONTROLLING REFERENCE: 12903208
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 0.962 INCHES MAXIMUM
OVERALL WIDTH: 0.840 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 35.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HCI
TERMINAL LENGTH: 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 75.0 MAXIMUM WORKING PEAK OFF-STATE VOLTAGE

140-909-01

TRANSISTOR

NSN, MFG P/N

5961014697316

NSN

5961-01-469-7316

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140-909-01

TRANSISTOR

NSN, MFG P/N

5961014697316

NSN

5961-01-469-7316

MFG

DYTRO CORP

12422237

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014697957

NSN

5961-01-469-7957

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12422237

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014697957

NSN

5961-01-469-7957

MFG

U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM

Description

III END ITEM IDENTIFICATION: FAMILY OF MEDIUM TACTICAL VEHICLES

1N4742ACT

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014697957

NSN

5961-01-469-7957

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1N4742ACT

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014697957

NSN

5961-01-469-7957

MFG

DIGI-KEY CORPORATION

Description

III END ITEM IDENTIFICATION: FAMILY OF MEDIUM TACTICAL VEHICLES

12422238

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014697966

NSN

5961-01-469-7966

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12422238

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014697966

NSN

5961-01-469-7966

MFG

U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM

Description

III END ITEM IDENTIFICATION: FAMILY OF MEDIUM TACTICAL VEHICLES

12422238-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014697966

NSN

5961-01-469-7966

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12422238-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014697966

NSN

5961-01-469-7966

MFG

BAE SYSTEMS TACTICAL VEHICLE SYSTEMS LP

Description

III END ITEM IDENTIFICATION: FAMILY OF MEDIUM TACTICAL VEHICLES

1N4001GICT-ND

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014697966

NSN

5961-01-469-7966

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1N4001GICT-ND

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014697966

NSN

5961-01-469-7966

MFG

DIGI-KEY CORPORATION

Description

III END ITEM IDENTIFICATION: FAMILY OF MEDIUM TACTICAL VEHICLES

12422238-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014697972

NSN

5961-01-469-7972

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12422238-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014697972

NSN

5961-01-469-7972

MFG

BAE SYSTEMS TACTICAL VEHICLE SYSTEMS LP

Description

III END ITEM IDENTIFICATION: FAMILY OF MEDIUD TACTICAL VEHICLES

G1754CT-ND

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014697972

NSN

5961-01-469-7972

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G1754CT-ND

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014697972

NSN

5961-01-469-7972

MFG

DIGI-KEY CORPORATION

Description

III END ITEM IDENTIFICATION: FAMILY OF MEDIUD TACTICAL VEHICLES