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5961-01-469-1973
20 Products
70HFR140
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014691973
NSN
5961-01-469-1973
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
FEATURES PROVIDED: REVERSE POLARITY
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.420 INCHES MINIMUM AND 1.460 INCHES MAXIMUM
OVERALL WIDTH: 0.680 INCHES NOMINAL
THREAD QUANTITY PER INCH: 28
THREAD SERIES DESIGNATOR: UNF
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TRANSISTOR
NSN, MFG P/N
5961014691975
NSN
5961-01-469-1975
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
SPECIAL FEATURES: SURFACE MOUNT; DYNAMIC DV/DT RATING;175 DEG C OPERATING TEMP; FAST SWITCHING
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014691976
NSN
5961-01-469-1976
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
FEATURES PROVIDED: HIGH FREQUENCY
FUNCTION FOR WHICH DESIGNED: SWITCHING
OVERALL HEIGHT: 0.094 INCHES MAXIMUM
OVERALL LENGTH: 0.235 INCHES MINIMUM AND 0.245 INCHES MAXIMUM
OVERALL WIDTH: 0.252 INCHES MINIMUM AND 0.264 INCHES MAXIMUM
SPECIAL FEATURES: 6.6 AMP; D-PAK OUTLINE; CENTER TAP CONFIGURATION; SMALL FOOT PRINT, SURFACE MOUNTABLE; LOW FORWARD VOLTAGE DROP; HIGH FREQ OPERATION; GUARD RING FOR ENHANCED RUGGEDNESS AND LONG TERM RELIABILITY
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TRANSISTOR
NSN, MFG P/N
5961014692378
NSN
5961-01-469-2378
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: AMPLIFIER AND SWITCHING
SPECIAL FEATURES: CERAMIC EYELETS; ELECTRICALLY ISOLATED; 200 VOLT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL DRAIN SUPPLY VOLTAGE
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TRANSISTOR,AIRCRAFT
NSN, MFG P/N
5961014692964
NSN
5961-01-469-2964
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
TRANSISTOR,AIRCRAFT
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014696070
NSN
5961-01-469-6070
4989B REFERENCE DM1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014696070
NSN
5961-01-469-6070
MFG
W & H NELSON LTD
Description
SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014696070
NSN
5961-01-469-6070
9-1772-00-100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014696070
NSN
5961-01-469-6070
MFG
BASLER ELECTRIC COMPANY
Description
SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014696071
NSN
5961-01-469-6071
4989B REFERENCE DM2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014696071
NSN
5961-01-469-6071
MFG
W & H NELSON LTD
Description
SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014696071
NSN
5961-01-469-6071
9-1772-00-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014696071
NSN
5961-01-469-6071
MFG
BASLER ELECTRIC COMPANY
Description
SEMICONDUCTOR DEVICE,DIODE
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12281179
TRANSISTOR
NSN, MFG P/N
5961014697311
NSN
5961-01-469-7311
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 19200
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 200.0 DEG CELSIUS CASE
MFR SOURCE CONTROLLING REFERENCE: 12903208
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 0.962 INCHES MAXIMUM
OVERALL WIDTH: 0.840 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 35.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HCI
TERMINAL LENGTH: 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 75.0 MAXIMUM WORKING PEAK OFF-STATE VOLTAGE
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TRANSISTOR
NSN, MFG P/N
5961014697311
NSN
5961-01-469-7311
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 19200
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 200.0 DEG CELSIUS CASE
MFR SOURCE CONTROLLING REFERENCE: 12903208
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 0.962 INCHES MAXIMUM
OVERALL WIDTH: 0.840 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 35.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HCI
TERMINAL LENGTH: 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 75.0 MAXIMUM WORKING PEAK OFF-STATE VOLTAGE
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TRANSISTOR
NSN, MFG P/N
5961014697311
NSN
5961-01-469-7311
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 19200
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 200.0 DEG CELSIUS CASE
MFR SOURCE CONTROLLING REFERENCE: 12903208
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 0.962 INCHES MAXIMUM
OVERALL WIDTH: 0.840 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 35.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HCI
TERMINAL LENGTH: 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 75.0 MAXIMUM WORKING PEAK OFF-STATE VOLTAGE
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TRANSISTOR
NSN, MFG P/N
5961014697316
NSN
5961-01-469-7316
MFG
DYTRO CORP
Description
III END ITEM IDENTIFICATION: AIRCRAFT,STARLIFTER C-141
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014697957
NSN
5961-01-469-7957
MFG
U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM
Description
III END ITEM IDENTIFICATION: FAMILY OF MEDIUM TACTICAL VEHICLES
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014697957
NSN
5961-01-469-7957
MFG
DIGI-KEY CORPORATION
Description
III END ITEM IDENTIFICATION: FAMILY OF MEDIUM TACTICAL VEHICLES
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014697966
NSN
5961-01-469-7966
MFG
U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM
Description
III END ITEM IDENTIFICATION: FAMILY OF MEDIUM TACTICAL VEHICLES
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014697966
NSN
5961-01-469-7966
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014697966
NSN
5961-01-469-7966
MFG
BAE SYSTEMS TACTICAL VEHICLE SYSTEMS LP
Description
III END ITEM IDENTIFICATION: FAMILY OF MEDIUM TACTICAL VEHICLES
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014697966
NSN
5961-01-469-7966
1N4001GICT-ND
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014697966
NSN
5961-01-469-7966
MFG
DIGI-KEY CORPORATION
Description
III END ITEM IDENTIFICATION: FAMILY OF MEDIUM TACTICAL VEHICLES
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12422238-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014697972
NSN
5961-01-469-7972
12422238-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014697972
NSN
5961-01-469-7972
MFG
BAE SYSTEMS TACTICAL VEHICLE SYSTEMS LP
Description
III END ITEM IDENTIFICATION: FAMILY OF MEDIUD TACTICAL VEHICLES
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014697972
NSN
5961-01-469-7972
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014697972
NSN
5961-01-469-7972
MFG
DIGI-KEY CORPORATION
Description
III END ITEM IDENTIFICATION: FAMILY OF MEDIUD TACTICAL VEHICLES