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5961-01-363-5427
20 Products
171-6598
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013635427
NSN
5961-01-363-5427
MFG
RADIOSPARES SAS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
16920-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013635428
NSN
5961-01-363-5428
MFG
SCHRUPP INDUSTRIES INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
171-6611
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013635428
NSN
5961-01-363-5428
MFG
RADIOSPARES SAS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
USD3045C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013635429
NSN
5961-01-363-5429
MFG
MICRO USPD INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
66.3567.132.00-A001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013635430
NSN
5961-01-363-5430
66.3567.132.00-A001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013635430
NSN
5961-01-363-5430
MFG
SELEX COMMUNICATIONS GMBH
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
9491BM
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013635430
NSN
5961-01-363-5430
MFG
CRYSTALONICS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SCSM05
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013635431
NSN
5961-01-363-5431
MFG
BOURNS INSTRUMENTS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
QSRD-4930
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013635432
NSN
5961-01-363-5432
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0561.3710.00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013635433
NSN
5961-01-363-5433
0561.3710.00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013635433
NSN
5961-01-363-5433
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MA4P232
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013635433
NSN
5961-01-363-5433
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
244-9514
TRANSISTOR
NSN, MFG P/N
5961013635740
NSN
5961-01-363-5740
MFG
RADIOSPARES SAS
Description
OVERALL HEIGHT: 0.320 INCHES MAXIMUM
OVERALL LENGTH: 0.238 INCHES MINIMUM AND 0.248 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES NOMINAL
TERMINAL LENGTH: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
Related Searches:
IRFD9110
TRANSISTOR
NSN, MFG P/N
5961013635740
NSN
5961-01-363-5740
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
OVERALL HEIGHT: 0.320 INCHES MAXIMUM
OVERALL LENGTH: 0.238 INCHES MINIMUM AND 0.248 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES NOMINAL
TERMINAL LENGTH: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
Related Searches:
IRFD9120
TRANSISTOR
NSN, MFG P/N
5961013635741
NSN
5961-01-363-5741
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 8.63 MILLIMETERS MAXIMUM
OVERALL LENGTH: 8.26 MILLIMETERS MAXIMUM
OVERALL WIDTH: 5.03 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -40.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
30WF20F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013635742
NSN
5961-01-363-5742
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
OVERALL HEIGHT: 1.015 INCHES MAXIMUM
OVERALL LENGTH: 0.268 INCHES MAXIMUM
TERMINAL LENGTH: 0.106 INCHES MINIMUM AND 0.115 INCHES MAXIMUM
Related Searches:
MV50B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013635743
NSN
5961-01-363-5743
MFG
QUALITY TECHNOLOGIES CORP
Description
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.740 INCHES MINIMUM AND 0.760 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN
Related Searches:
G526697-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013636096
NSN
5961-01-363-6096
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: G526697-1
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 3B150
THE MANUFACTURERS DATA:
Related Searches:
SD10176
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013636096
NSN
5961-01-363-6096
MFG
SOLITRON DEVICES INC.
Description
DESIGN CONTROL REFERENCE: G526697-1
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 3B150
THE MANUFACTURERS DATA:
Related Searches:
G1750
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013636340
NSN
5961-01-363-6340
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
G265528-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013636861
NSN
5961-01-363-6861
G265528-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013636861
NSN
5961-01-363-6861
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 5.50 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
III END ITEM IDENTIFICATION: AN/USC-38(V)1
MATERIAL: SILICON
Related Searches:
SL30380
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013636861
NSN
5961-01-363-6861
SL30380
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013636861
NSN
5961-01-363-6861
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 5.50 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
III END ITEM IDENTIFICATION: AN/USC-38(V)1
MATERIAL: SILICON
