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5961-01-549-4380

20 Products

APT4020SVR

TRANSISTOR

NSN, MFG P/N

5961015494380

NSN

5961-01-549-4380

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APT4020SVR

TRANSISTOR

NSN, MFG P/N

5961015494380

NSN

5961-01-549-4380

MFG

MICROSEMI CORP. - POWER PRODUCTS GROUP DBA ADVANCED POWER TECHNOLOGY INC DIV MICROSEMI CORPORATION

48-13821A07

TRANSISTOR

NSN, MFG P/N

5961015494433

NSN

5961-01-549-4433

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48-13821A07

TRANSISTOR

NSN, MFG P/N

5961015494433

NSN

5961-01-549-4433

MFG

MOTOROLA INC. DIV U.S. FEDERAL GOVERNMENT MARKETS DIVISION

1N2068

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015494622

NSN

5961-01-549-4622

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1N2068

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015494622

NSN

5961-01-549-4622

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
III END ITEM IDENTIFICATION: MISC ELECTRIC PLANT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: 250 AMP AVG POWER SILICON RECTIFIER DIODE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 6.516 INCHES MINIMUM AND 7.181 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.338 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
TERMINAL LENGTH: 0.983 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

1N2068-ND

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015494622

NSN

5961-01-549-4622

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1N2068-ND

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015494622

NSN

5961-01-549-4622

MFG

DIGI-KEY CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
III END ITEM IDENTIFICATION: MISC ELECTRIC PLANT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: 250 AMP AVG POWER SILICON RECTIFIER DIODE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 6.516 INCHES MINIMUM AND 7.181 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.338 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
TERMINAL LENGTH: 0.983 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

324-6386486 FN.117

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015494622

NSN

5961-01-549-4622

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324-6386486 FN.117

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015494622

NSN

5961-01-549-4622

MFG

NAVAL SEA SYSTEMS COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
III END ITEM IDENTIFICATION: MISC ELECTRIC PLANT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: 250 AMP AVG POWER SILICON RECTIFIER DIODE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 6.516 INCHES MINIMUM AND 7.181 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.338 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
TERMINAL LENGTH: 0.983 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

APT5028SVR

TRANSISTOR

NSN, MFG P/N

5961015494865

NSN

5961-01-549-4865

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APT5028SVR

TRANSISTOR

NSN, MFG P/N

5961015494865

NSN

5961-01-549-4865

MFG

MICROSEMI CORP. - POWER PRODUCTS GROUP DBA ADVANCED POWER TECHNOLOGY INC DIV MICROSEMI CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM DRAIN CURRENT
OVERALL HEIGHT: 0.196 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.543 INCHES MINIMUM AND 0.551 INCHES MAXIMUM
OVERALL WIDTH: 0.628 INCHES MINIMUM AND 0.632 INCHES MAXIMUM
SPECIAL FEATURES: D3 PACKAGE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL REGULATOR VOLTAGE

19511

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015496169

NSN

5961-01-549-6169

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19511

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015496169

NSN

5961-01-549-6169

MFG

MAGNUM PRODUCTS LLC

Description

III END ITEM IDENTIFICATION: 6115-01-531-0571, 20KW GENERATOR SET
SPECIAL FEATURES: DIODE, BRIDGE

STPS1545F

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015497278

NSN

5961-01-549-7278

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STPS1545F

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015497278

NSN

5961-01-549-7278

MFG

STMICROELECTRONICS INC

Description

FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
OVERALL HEIGHT: 0.173 INCHES NOMINAL
OVERALL LENGTH: 1.111 INCHES NOMINAL
OVERALL WIDTH: 0.393 INCHES NOMINAL
SPECIAL FEATURES: WEIGHT 2.0 G;RECOMMENDED TORQUE VALUE 0.55 N.M;MAXIMUM TORQUE VALUE 0.7 N.M

MRF1511T1

TRANSISTOR

NSN, MFG P/N

5961015497400

NSN

5961-01-549-7400

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MRF1511T1

TRANSISTOR

NSN, MFG P/N

5961015497400

NSN

5961-01-549-7400

MFG

FREESCALE SEMICONDUCTOR INC.

Description

III PART NAME ASSIGNED BY CONTROLLING AGENCY: RF POWER FIELD EFFECT TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
OVERALL HEIGHT: 0.065 INCHES MINIMUM AND 0.072 INCHES MAXIMUM
OVERALL LENGTH: 0.255 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL WIDTH: 0.245 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: N-CHANNEL ENHANCEMENT; MODE LATERAL MOSFET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -0.5 MINIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM DRAIN TO SOURCE VOLTAGE

12900691

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961015498489

NSN

5961-01-549-8489

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12900691

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961015498489

NSN

5961-01-549-8489

MFG

U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND

QJD0180002

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961015498489

NSN

5961-01-549-8489

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QJD0180002

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961015498489

NSN

5961-01-549-8489

MFG

POWEREX INC

12488459

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015499197

NSN

5961-01-549-9197

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12488459

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015499197

NSN

5961-01-549-9197

MFG

MARVIN LAND SYSTEMS INC.

Description

III END ITEM IDENTIFICATION: 4120-01-516-4715 AIR CONDITIONER
III PART NAME ASSIGNED BY CONTROLLING AGENCY: AUXILIARY POWER UNIT ASSEMBLY

NEWARK06F3329

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015499460

NSN

5961-01-549-9460

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NEWARK06F3329

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015499460

NSN

5961-01-549-9460

MFG

HENSCHEL INC. DBA L-3 HENSCHEL

151-0426-01

TRANSISTOR

NSN, MFG P/N

5961015500455

NSN

5961-01-550-0455

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151-0426-01

TRANSISTOR

NSN, MFG P/N

5961015500455

NSN

5961-01-550-0455

MFG

TEKTRONIX INC. DBA TEKTRONIX

151-1245-00

TRANSISTOR

NSN, MFG P/N

5961015500456

NSN

5961-01-550-0456

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151-1245-00

TRANSISTOR

NSN, MFG P/N

5961015500456

NSN

5961-01-550-0456

MFG

TEKTRONIX INC. DBA TEKTRONIX

SA18CA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015500773

NSN

5961-01-550-0773

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SA18CA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015500773

NSN

5961-01-550-0773

MFG

FREESCALE SEMICONDUCTOR INC.

Description

FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ZENER TRANSIENT VOLTAGE SUPPRESSOR BIDIRECTIONAL
INCLOSURE MATERIAL: PLASTIC
SPECIAL FEATURES: STAND OFF ZENER VOLTAGE RANGE 5 TO 170 V; PEAK POWER 500 W AT 1 MS; MAX CLAMP VOLTAGE AT PEAK PULSE CURRENT; LOW LEAKAGE LESS THAN 1 UA ABOVE 8.5 VOLTS; RESPONSE TIME IS TYPICALLY LESS THAN 1 NS; OPERATING AND STORAGE TEMP RANGE M55.0 TO P175.0 DEG C;
~1: CASE VOID-FREE, TRANSFER-MOLDED, THERMOSETTING PLASTIC; FINISH ALL EXTERNAL SURFACES ARE CORROSION RESISTANT AND LEADS ARE READILY SOLDERABLE; POLARITY CATHODE INDICATED BY POLARITY BAND; WHEN OPERATED IN ZENER MODE, WILL BE POSITIVE WITH RESPECT TO ANODE

SA18C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015500774

NSN

5961-01-550-0774

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SA18C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015500774

NSN

5961-01-550-0774

MFG

FREESCALE SEMICONDUCTOR INC.

Description

FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
SPECIAL FEATURES: REVERSE STAND-OFF VOLTAGE 18.00 VRWM; BREAKDOWN VOLTAGE 20.00 VBR V MIN AT IT; BREAKDOWN VOLTAGE 25.30 VBR V MAX AT IT; TEST CURRENT IT 1 MA; MAX CLAMPING VOLTAGE AT LPP 32.2 VC V; PEAK PULSE CURRENT 1PP 15.5 A; REVERSE LEAKAGE AT VRWM IR 3 UA;
~1: BI-DIRECTIONAL 500 WATT AXIAL LEAD TVS; GLASS PASSIVATED CIP JUNCTION; 500 W PEAK PULSE POWER CAPABILITY; REPETITION RATE, DUTY CYCLE 0.01 PCT; WEIGHT 0.015 OUNCE

SP8160100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015500848

NSN

5961-01-550-0848

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SP8160100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015500848

NSN

5961-01-550-0848

MFG

MICROSEMI POWER MODULE PRODUCTS

Description

III END ITEM IDENTIFICATION: 2350-01-509-3953 CARRIER CARGO
III PART NAME ASSIGNED BY CONTROLLING AGENCY: LEAD IFCS ISOLATED POWER

SPB160100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015500848

NSN

5961-01-550-0848

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SPB160100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015500848

NSN

5961-01-550-0848

MFG

MICROSEMI CORP-COLORADO

Description

III END ITEM IDENTIFICATION: 2350-01-509-3953 CARRIER CARGO
III PART NAME ASSIGNED BY CONTROLLING AGENCY: LEAD IFCS ISOLATED POWER

2035-3002

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015500849

NSN

5961-01-550-0849

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2035-3002

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015500849

NSN

5961-01-550-0849

MFG

NGH RETAIL LLC