Featured Products

My Quote Request

No products added yet

5961-01-485-1987

20 Products

143110006

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014851987

NSN

5961-01-485-1987

View More Info

143110006

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014851987

NSN

5961-01-485-1987

MFG

U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION

Description

III END ITEM IDENTIFICATION: ARTCC CRITICAL AND ESSENTIAL POWER SYSTEM (ACEPS)
SPECIAL FEATURES: 12A, 800V

143110007

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014852003

NSN

5961-01-485-2003

View More Info

143110007

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014852003

NSN

5961-01-485-2003

MFG

U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION

Description

III END ITEM IDENTIFICATION: ARTCC CRITICAL AND ESSENTIAL POWER SYSTEM (ACEPS)
SPECIAL FEATURES: 12A, 800V

143117047

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014852026

NSN

5961-01-485-2026

View More Info

143117047

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014852026

NSN

5961-01-485-2026

MFG

U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION

Description

III END ITEM IDENTIFICATION: ARTCC CRITICAL AND ESSENTIAL POWER SYSTEM (ACEPS)
SPECIAL FEATURES: 70A, 400V

143117054

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014852028

NSN

5961-01-485-2028

View More Info

143117054

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014852028

NSN

5961-01-485-2028

MFG

U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION

Description

III END ITEM IDENTIFICATION: ARTCC CRITICAL AND ESSENTIAL POWER SYSTEM (ACEPS)
SPECIAL FEATURES: 70A, 400V

143126011

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014852032

NSN

5961-01-485-2032

View More Info

143126011

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014852032

NSN

5961-01-485-2032

MFG

EATON CORPORATION

Description

III END ITEM IDENTIFICATION: ARTCC CRITICAL AND ESSENTIAL POWER SYSTEM (ACEPS)
SPECIAL FEATURES: 400A, 800V

11472202-1

TRANSISTOR

NSN, MFG P/N

5961014852430

NSN

5961-01-485-2430

View More Info

11472202-1

TRANSISTOR

NSN, MFG P/N

5961014852430

NSN

5961-01-485-2430

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 15.60 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: PATRIOT MISSILE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.310 INCHES MINIMUM AND 0.495 INCHES MAXIMUM
OVERALL LENGTH: 1.520 INCHES MINIMUM AND 1.540 INCHES MAXIMUM
OVERALL WIDTH: 0.990 INCHES MINIMUM AND 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 1000.0 MAXIMUM DRAIN TO GATE VOLTAGE

HC1047

TRANSISTOR

NSN, MFG P/N

5961014852430

NSN

5961-01-485-2430

View More Info

HC1047

TRANSISTOR

NSN, MFG P/N

5961014852430

NSN

5961-01-485-2430

MFG

MICROSEMI CORP. - POWER PRODUCTS GROUP DBA ADVANCED POWER TECHNOLOGY INC DIV MICROSEMI CORPORATION

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 15.60 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: PATRIOT MISSILE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.310 INCHES MINIMUM AND 0.495 INCHES MAXIMUM
OVERALL LENGTH: 1.520 INCHES MINIMUM AND 1.540 INCHES MAXIMUM
OVERALL WIDTH: 0.990 INCHES MINIMUM AND 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 1000.0 MAXIMUM DRAIN TO GATE VOLTAGE

14338024-001

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014853214

NSN

5961-01-485-3214

View More Info

14338024-001

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014853214

NSN

5961-01-485-3214

MFG

EATON CORPORATION

Description

III END ITEM IDENTIFICATION: ARTCC CRITICAL AND ESSENTIAL POWER SYSTEM (ACEPS)
SPECIAL FEATURES: SILICON CONTROLLED RECTIFIER (SCR),235A, 1500V

143324014

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014853232

NSN

5961-01-485-3232

View More Info

143324014

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014853232

NSN

5961-01-485-3232

MFG

EATON CORPORATION

Description

III END ITEM IDENTIFICATION: ARTCC CRITICAL AND ESSENTIAL POWER SYSTEM (ACEPS)
SPECIAL FEATURES: SILICON-CONTROLLED RECTIFIER (SCR),300A, 110V

124801023

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014853259

NSN

5961-01-485-3259

View More Info

124801023

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014853259

NSN

5961-01-485-3259

MFG

U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION

Description

III END ITEM IDENTIFICATION: ARTCC CRITICAL AND ESSENTIAL POWER SYSTEM (ACEPS)
SPECIAL FEATURES: RC-MOV ASSEMBLY,120V

12965307

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014853481

NSN

5961-01-485-3481

View More Info

12965307

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014853481

NSN

5961-01-485-3481

MFG

U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND

Description

III END ITEM IDENTIFICATION: HOWITZER, TOWED, MEDIUM, 155MM, M198
SPECIAL FEATURES: DIODE ASSEMBLY, HYPAK RELAX BOX

143330012

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014853747

NSN

5961-01-485-3747

View More Info

143330012

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014853747

NSN

5961-01-485-3747

MFG

U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION

Description

III END ITEM IDENTIFICATION: ARTCC CRITICAL AND ESSENTIAL POWER SYSTEM (ACEPS)
SPECIAL FEATURES: SCR,550A, 1100V, 470P

143329003

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014853749

NSN

5961-01-485-3749

View More Info

143329003

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014853749

NSN

5961-01-485-3749

MFG

U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION

Description

III END ITEM IDENTIFICATION: ARTCC CRITICAL AND ESSENTIAL POWER SYSTEM (ACEPS)
SPECIAL FEATURES: SILICON CONTROLLED RECTIFIER (SCR),698A, 700V

143333017

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014853752

NSN

5961-01-485-3752

View More Info

143333017

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014853752

NSN

5961-01-485-3752

MFG

EATON CORPORATION

Description

III END ITEM IDENTIFICATION: ARTCC CRITICAL AND ESSENTIAL POWER SYSTEM (ACEPS)
SPECIAL FEATURES: SCR,900A, 1600V,T920

JANTX2N6437

TRANSISTOR

NSN, MFG P/N

5961014854040

NSN

5961-01-485-4040

View More Info

JANTX2N6437

TRANSISTOR

NSN, MFG P/N

5961014854040

NSN

5961-01-485-4040

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6437
SPEC/STD CONTROLLING DATA:

D50-0006-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014854160

NSN

5961-01-485-4160

View More Info

D50-0006-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014854160

NSN

5961-01-485-4160

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Description

CURRENT RATING PER CHARACTERISTIC: 33.30 AMPERES MAXIMUM PEAK PULSE CURRENT
OVERALL DIAMETER: 0.120 INCHES MINIMUM AND 0.127 INCHES MAXIMUM
OVERALL LENGTH: 2.240 INCHES MINIMUM AND 2.255 INCHES MAXIMUM
SPECIAL FEATURES: NAME ASSIGNED BY MANUFACTURER IS TRANSORB; 8.0V; 500W; BIPOLAR; OPERATING TEMPERATURE MINUS 55 TO PLUS 175 DEGREES C; BREAKDOWN VOLTAGE MINIMUM 8.89 VOLTS MAXIMUM 10.90 VOLTS; MAXIMUM REVERSE LEAKAGE 25.0 MICROAMPS
TERMINAL CIRCLE DIAMETER: 0.030 INCHES MINIMUM AND 0.034 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS

MMBD4148

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014854957

NSN

5961-01-485-4957

View More Info

MMBD4148

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014854957

NSN

5961-01-485-4957

MFG

FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV

Description

COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 600.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES MINIMUM AND 0.043 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES NOMINAL
OVERALL WIDTH: 0.051 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE

VA-70-0595-001

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014854957

NSN

5961-01-485-4957

View More Info

VA-70-0595-001

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014854957

NSN

5961-01-485-4957

MFG

SELEX GALILEO LTD

Description

COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 600.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES MINIMUM AND 0.043 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES NOMINAL
OVERALL WIDTH: 0.051 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE

CR-0403

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014854998

NSN

5961-01-485-4998

View More Info

CR-0403

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014854998

NSN

5961-01-485-4998

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

5905585

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014856444

NSN

5961-01-485-6444

View More Info

5905585

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014856444

NSN

5961-01-485-6444

MFG

NAVAL SEA SYSTEMS COMMAND

Description

ACCOMMODATED ITEM SECURING DEVICE TYPE: THREADED HOLE
MATERIAL: ALUMINUM ALLOY 6061
MOUNTING FACILITY TYPE AND QUANTITY: 3 THREADED HOLE FIRST MOUNTING FACILITY 1 THREADED HOLE SECOND MOUNTING FACILITY
NOMINAL THREAD SIZE: 0.250 INCHES FIRST MOUNTING FACILITY 0.164 INCHES SECOND MOUNTING FACILITY
OVERALL HEIGHT: 0.469 INCHES NOMINAL
STYLE DESIGNATOR: 42B SEMICIRCULAR TAB HOLD DOWN
SURFACE TREATMENT: NICKEL
THREAD CLASS: 2B ALL MOUNTING FACILITIES
THREAD QUANTITY PER INCH: 28 FIRST MOUNTING FACILITY 32 SECOND MOUNTING FACILITY
THREAD SERIES DESIGNATOR: UNF FIRST MOUNTING FACILITY UNC SECOND MOUNTING FACILITY