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5961-01-364-5317
20 Products
90001A1977
TRANSISTOR
NSN, MFG P/N
5961013645317
NSN
5961-01-364-5317
MFG
MARINE CORPS LOGISTICS COMMAND TECHNICAL DATA REPOSITORY CUSTOMER SERVICE-MICC LOGISTICS OPERATIONS CENTER
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 13.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.795 INCHES NOMINAL
OVERALL LENGTH: 0.545 INCHES NOMINAL
OVERALL WIDTH: 0.255 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
162994
TRANSISTOR
NSN, MFG P/N
5961013642648
NSN
5961-01-364-2648
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: E3-HAVEQUIKAN
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.150 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.960 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
OVERALL WIDTH: 0.720 INCHES MINIMUM AND 0.730 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 55.0 WATTS MAXIMUM ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.
Related Searches:
MRF136
TRANSISTOR
NSN, MFG P/N
5961013642648
NSN
5961-01-364-2648
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: E3-HAVEQUIKAN
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.150 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.960 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
OVERALL WIDTH: 0.720 INCHES MINIMUM AND 0.730 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 55.0 WATTS MAXIMUM ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.
Related Searches:
Q26-0026-001
TRANSISTOR
NSN, MFG P/N
5961013642648
NSN
5961-01-364-2648
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: E3-HAVEQUIKAN
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.150 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.960 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
OVERALL WIDTH: 0.720 INCHES MINIMUM AND 0.730 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 55.0 WATTS MAXIMUM ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.
Related Searches:
13-1332017-1
TRANSISTOR
NSN, MFG P/N
5961013642649
NSN
5961-01-364-2649
MFG
OGDEN AIR LOGISTICS CENTER
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 38.00 AMPERES MAXIMUM OFF-STATE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND RADIATION HARDENED
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.563 INCHES MAXIMUM
OVERALL WIDTH: 0.820 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 0.406 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
NH13-1332017-1
TRANSISTOR
NSN, MFG P/N
5961013642649
NSN
5961-01-364-2649
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 38.00 AMPERES MAXIMUM OFF-STATE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND RADIATION HARDENED
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.563 INCHES MAXIMUM
OVERALL WIDTH: 0.820 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 0.406 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
22318-25146
TRANSISTOR
NSN, MFG P/N
5961013644452
NSN
5961-01-364-4452
MFG
NEUTRIK INSTRUMENTATION INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL GATE CURRENT AND 5.00 MILLIAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 30.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 8.8 MILLIMETERS MAXIMUM
OVERALL LENGTH: 9.5 MILLIMETERS MAXIMUM
OVERALL WIDTH: 6.4 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 10.5 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 NOMINAL GATE SUPPLY VOLTAGE AND 30.0 NOMINAL DRAIN TO GATE VOLTAGE
Related Searches:
85HFL60S02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013644453
NSN
5961-01-364-4453
85HFL60S02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013644453
NSN
5961-01-364-4453
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 85.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-5
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.420 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.690 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.420 INCHES NOMINAL AND 0.570 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
8734026
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013644453
NSN
5961-01-364-4453
MFG
SACRAMENTO AIR LOGISTICS CENTER SM-ALC/LIIL
Description
CURRENT RATING PER CHARACTERISTIC: 85.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-5
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.420 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.690 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.420 INCHES NOMINAL AND 0.570 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
850-40904-40
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013644454
NSN
5961-01-364-4454
850-40904-40
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013644454
NSN
5961-01-364-4454
MFG
KATO ENGINEERING INC.
Description
CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 6.880 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL FORWARD VOLTAGE, AVERAGE
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SKR135F12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013644454
NSN
5961-01-364-4454
MFG
MICROSEMI CORP-COLORADO
Description
CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 6.880 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL FORWARD VOLTAGE, AVERAGE
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90025-03TX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013644751
NSN
5961-01-364-4751
90025-03TX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013644751
NSN
5961-01-364-4751
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP STANDARDIZATION UNIT
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 90025-03TX
FEATURES PROVIDED: BURN IN
MANUFACTURERS CODE: 037Z3
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 PIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
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9002503TB
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013644751
NSN
5961-01-364-4751
9002503TB
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013644751
NSN
5961-01-364-4751
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 90025-03TX
FEATURES PROVIDED: BURN IN
MANUFACTURERS CODE: 037Z3
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 PIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
PIC627
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013644751
NSN
5961-01-364-4751
PIC627
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013644751
NSN
5961-01-364-4751
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 90025-03TX
FEATURES PROVIDED: BURN IN
MANUFACTURERS CODE: 037Z3
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 PIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
G406981-1
TRANSISTOR
NSN, MFG P/N
5961013644908
NSN
5961-01-364-4908
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: G406981-1
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 3B150
THE MANUFACTURERS DATA:
Related Searches:
IXGM1207
TRANSISTOR
NSN, MFG P/N
5961013644908
NSN
5961-01-364-4908
MFG
IXYS CORPORATION
Description
DESIGN CONTROL REFERENCE: G406981-1
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 3B150
THE MANUFACTURERS DATA:
Related Searches:
68-7079-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013644909
NSN
5961-01-364-4909
68-7079-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013644909
NSN
5961-01-364-4909
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
DESIGN CONTROL REFERENCE: G554026-1
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 3B150
THE MANUFACTURERS DATA:
Related Searches:
G554026-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013644909
NSN
5961-01-364-4909
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: G554026-1
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 3B150
THE MANUFACTURERS DATA:
Related Searches:
80-7710
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013644910
NSN
5961-01-364-4910
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
DESIGN CONTROL REFERENCE: G490358-1
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 3B150
THE MANUFACTURERS DATA:
Related Searches:
G490358-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013644910
NSN
5961-01-364-4910
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: G490358-1
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 3B150
THE MANUFACTURERS DATA:
