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5961-00-393-8482
20 Products
A10041
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961003938482
NSN
5961-00-393-8482
MFG
API ELECTRONICS INC.
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
Related Searches:
2N5061
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003915636
NSN
5961-00-391-5636
2N5061
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003915636
NSN
5961-00-391-5636
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
A34113
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003915636
NSN
5961-00-391-5636
A34113
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003915636
NSN
5961-00-391-5636
MFG
PARAGON PRECISION INC.
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
368HR7028SZ
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003916991
NSN
5961-00-391-6991
368HR7028SZ
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003916991
NSN
5961-00-391-6991
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
037-321
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003918718
NSN
5961-00-391-8718
037-321
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003918718
NSN
5961-00-391-8718
MFG
MILLER ELECTRIC MFG CO
Description
DESIGN CONTROL REFERENCE: 037-321
MANUFACTURERS CODE: 40608
MATERIAL: SILICON
OVERALL LENGTH: 16.250 INCHES NOMINAL
THE MANUFACTURERS DATA:
Related Searches:
22D1002
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003918721
NSN
5961-00-391-8721
22D1002
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003918721
NSN
5961-00-391-8721
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, PEAK AND 30.00 MILLIAMPERES MAXIMUM OFF-STATE CURRENT, PEAK
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 2.246 INCHES MINIMUM AND 2.250 INCHES MAXIMUM
OVERALL LENGTH: 1.000 INCHES MINIMUM AND 1.065 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1100.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
88-7180
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003918721
NSN
5961-00-391-8721
88-7180
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003918721
NSN
5961-00-391-8721
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, PEAK AND 30.00 MILLIAMPERES MAXIMUM OFF-STATE CURRENT, PEAK
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 2.246 INCHES MINIMUM AND 2.250 INCHES MAXIMUM
OVERALL LENGTH: 1.000 INCHES MINIMUM AND 1.065 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1100.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
C397PX104
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003918721
NSN
5961-00-391-8721
C397PX104
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003918721
NSN
5961-00-391-8721
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, PEAK AND 30.00 MILLIAMPERES MAXIMUM OFF-STATE CURRENT, PEAK
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 2.246 INCHES MINIMUM AND 2.250 INCHES MAXIMUM
OVERALL LENGTH: 1.000 INCHES MINIMUM AND 1.065 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1100.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
T727103524DG
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003918721
NSN
5961-00-391-8721
T727103524DG
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003918721
NSN
5961-00-391-8721
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, PEAK AND 30.00 MILLIAMPERES MAXIMUM OFF-STATE CURRENT, PEAK
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 2.246 INCHES MINIMUM AND 2.250 INCHES MAXIMUM
OVERALL LENGTH: 1.000 INCHES MINIMUM AND 1.065 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1100.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
353-3687-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003924075
NSN
5961-00-392-4075
353-3687-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003924075
NSN
5961-00-392-4075
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 115.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
FDH6234
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003924075
NSN
5961-00-392-4075
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 115.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
PG1438
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003924075
NSN
5961-00-392-4075
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 115.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
352-0661-013
TRANSISTOR
NSN, MFG P/N
5961003924076
NSN
5961-00-392-4076
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.352 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.8 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
48C44293B08
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961003925561
NSN
5961-00-392-5561
48C44293B08
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961003925561
NSN
5961-00-392-5561
MFG
MOTOROLA INC MOTOROLA AUTOMOTIVE ELECTRONICS
Description
MAJOR COMPONENTS: DIODE 3
SPECIAL FEATURES: METAL CASE
Related Searches:
AT27124
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961003925561
NSN
5961-00-392-5561
AT27124
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961003925561
NSN
5961-00-392-5561
MFG
DEERE & CO
Description
MAJOR COMPONENTS: DIODE 3
SPECIAL FEATURES: METAL CASE
Related Searches:
48-010069-01
TRANSISTOR
NSN, MFG P/N
5961003932544
NSN
5961-00-393-2544
MFG
APPLIED TECHNOLOGY DIV OF ANTEKNA INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
NF510
TRANSISTOR
NSN, MFG P/N
5961003932544
NSN
5961-00-393-2544
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
122702-1
TRANSISTOR
NSN, MFG P/N
5961003933693
NSN
5961-00-393-3693
MFG
CUBIC DEFENSE APPLICATIONS INC.
Description
DESIGN CONTROL REFERENCE: 122702-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94987
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
619003-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003933703
NSN
5961-00-393-3703
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 480.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 280.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
6E4810-52-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003937689
NSN
5961-00-393-7689
6E4810-52-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003937689
NSN
5961-00-393-7689
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
DESIGN CONTROL REFERENCE: 6E4810-52-0001
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 73030
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
