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5961-01-311-4478
20 Products
28381-101V
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013114478
NSN
5961-01-311-4478
28381-101V
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013114478
NSN
5961-01-311-4478
MFG
MARCONI ELECTRONICS INC MARCONI INSTRUMENTS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
28381/101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013114478
NSN
5961-01-311-4478
MFG
AEROFLEX WICHITA INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
28381-132G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013114479
NSN
5961-01-311-4479
28381-132G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013114479
NSN
5961-01-311-4479
MFG
MARCONI ELECTRONICS INC MARCONI INSTRUMENTS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
28381/132
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013114479
NSN
5961-01-311-4479
MFG
AEROFLEX WICHITA INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
D11225
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013114480
NSN
5961-01-311-4480
MFG
SIFCO INDUSTRIES INC. DBA SIFCO SELECTIVE PLATING DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
AT55005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013114481
NSN
5961-01-311-4481
MFG
DEERE & CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
28359-189D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013114482
NSN
5961-01-311-4482
28359-189D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013114482
NSN
5961-01-311-4482
MFG
MARCONI ELECTRONICS INC MARCONI INSTRUMENTS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
28359/189
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013114482
NSN
5961-01-311-4482
MFG
AEROFLEX WICHITA INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MJ12002
TRANSISTOR
NSN, MFG P/N
5961013114798
NSN
5961-01-311-4798
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
III END ITEM IDENTIFICATION: 6625-01-146-1554 TEST SET,ELECTRICAL METER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES NOMINAL
OVERALL LENGTH: 1.550 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 55597-TR0001300A MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 750.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAG
Related Searches:
TR0001300
TRANSISTOR
NSN, MFG P/N
5961013114798
NSN
5961-01-311-4798
MFG
ARBITER SYSTEMS INCORPORATED
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
III END ITEM IDENTIFICATION: 6625-01-146-1554 TEST SET,ELECTRICAL METER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES NOMINAL
OVERALL LENGTH: 1.550 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 55597-TR0001300A MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 750.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAG
Related Searches:
IRFF331
TRANSISTOR
NSN, MFG P/N
5961013114799
NSN
5961-01-311-4799
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 3.50 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: 6625-01-146-1554 TEST SET,ELECTRICAL METER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.260 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 55597-TR0000900A MANUFACTURERS SPECIFICATION CONTROL
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 350.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
TR0000900A
TRANSISTOR
NSN, MFG P/N
5961013114799
NSN
5961-01-311-4799
MFG
ARBITER SYSTEMS INCORPORATED
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 3.50 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: 6625-01-146-1554 TEST SET,ELECTRICAL METER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.260 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 55597-TR0000900A MANUFACTURERS SPECIFICATION CONTROL
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 350.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
75Z1091
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013115300
NSN
5961-01-311-5300
75Z1091
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013115300
NSN
5961-01-311-5300
MFG
MORRIS MATERIAL HANDLING INC.
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
38800052
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013115301
NSN
5961-01-311-5301
38800052
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013115301
NSN
5961-01-311-5301
MFG
DELTYME CORPORATION
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
28455-421X
TRANSISTOR
NSN, MFG P/N
5961013115400
NSN
5961-01-311-5400
MFG
AEROFLEX WICHITA INC.
Description
TRANSISTOR
Related Searches:
TR0002201A
TRANSISTOR
NSN, MFG P/N
5961013115401
NSN
5961-01-311-5401
MFG
ARBITER SYSTEMS INCORPORATED
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 2.4 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
VN0104N3
TRANSISTOR
NSN, MFG P/N
5961013115401
NSN
5961-01-311-5401
MFG
SUPERTEX INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 2.4 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
646-6992-012
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013115402
NSN
5961-01-311-5402
646-6992-012
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013115402
NSN
5961-01-311-5402
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
DESIGN CONTROL REFERENCE: 646-6992-012
MANUFACTURERS CODE: 13499
MOUNTING FACILITY QUANTITY: 1 ALL SEMICONDUCTOR
MOUNTING METHOD: THREADED STUD ALL SEMICONDUCTOR
NOMINAL THREAD SIZE: 0.164 INCHES ALL SEMICONDUCTOR
OVERALL LENGTH: 0.600 INCHES NOMINAL ALL SEMICONDUCTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
THE MANUFACTURERS DATA:
THREAD QUANTITY PER INCH: 32 ALL SEMICONDUCTOR
THREAD SERIES DESIGNATOR: UNC ALL SEMICONDUCTOR
Related Searches:
1884-0278
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013115403
NSN
5961-01-311-5403
1884-0278
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013115403
NSN
5961-01-311-5403
MFG
HEWLETT PACKARD CO
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE AND 8.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
III END ITEM IDENTIFICATION: INTEGRATED UNDERWATER SURVIELANCE SYSTEMS, OLIVER PERRY CLASS FFG, WASP CLASS LHD, TARAWA CLASS LHA, NIMITZ CLASS CVN, SEAWOLF CLASS SSN
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 4.82 MILLIMETERS MAXIMUM
OVERALL LENGTH: 16.51 MILLIMETERS MAXIMUM
OVERALL WIDTH: 10.66 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 14.73 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLT
Related Searches:
1884-0302
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013115403
NSN
5961-01-311-5403
1884-0302
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013115403
NSN
5961-01-311-5403
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE AND 8.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
III END ITEM IDENTIFICATION: INTEGRATED UNDERWATER SURVIELANCE SYSTEMS, OLIVER PERRY CLASS FFG, WASP CLASS LHD, TARAWA CLASS LHA, NIMITZ CLASS CVN, SEAWOLF CLASS SSN
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 4.82 MILLIMETERS MAXIMUM
OVERALL LENGTH: 16.51 MILLIMETERS MAXIMUM
OVERALL WIDTH: 10.66 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 14.73 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLT
