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5961-01-311-5403
20 Products
C126M
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013115403
NSN
5961-01-311-5403
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE AND 8.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
III END ITEM IDENTIFICATION: INTEGRATED UNDERWATER SURVIELANCE SYSTEMS, OLIVER PERRY CLASS FFG, WASP CLASS LHD, TARAWA CLASS LHA, NIMITZ CLASS CVN, SEAWOLF CLASS SSN
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 4.82 MILLIMETERS MAXIMUM
OVERALL LENGTH: 16.51 MILLIMETERS MAXIMUM
OVERALL WIDTH: 10.66 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 14.73 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
67759
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013115403
NSN
5961-01-311-5403
MFG
INTERSIL CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE AND 8.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
III END ITEM IDENTIFICATION: INTEGRATED UNDERWATER SURVIELANCE SYSTEMS, OLIVER PERRY CLASS FFG, WASP CLASS LHD, TARAWA CLASS LHA, NIMITZ CLASS CVN, SEAWOLF CLASS SSN
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 4.82 MILLIMETERS MAXIMUM
OVERALL LENGTH: 16.51 MILLIMETERS MAXIMUM
OVERALL WIDTH: 10.66 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 14.73 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
TR0004801A
TRANSISTOR
NSN, MFG P/N
5961013116796
NSN
5961-01-311-6796
MFG
ARBITER SYSTEMS INCORPORATED
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 0.25 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 2.4 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
VN1304N3
TRANSISTOR
NSN, MFG P/N
5961013116796
NSN
5961-01-311-6796
MFG
SUPERTEX INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 0.25 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 2.4 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
1A20813H01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013117502
NSN
5961-01-311-7502
1A20813H01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013117502
NSN
5961-01-311-7502
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.062 INCHES MAXIMUM
OVERALL LENGTH: 1.110 INCHES MINIMUM AND 1.140 INCHES MAXIMUM
OVERALL WIDTH: 1.110 INCHES MINIMUM AND 1.140 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TAB
Related Searches:
HRSCBA6
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013117502
NSN
5961-01-311-7502
HRSCBA6
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013117502
NSN
5961-01-311-7502
MFG
SEMTECH CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.062 INCHES MAXIMUM
OVERALL LENGTH: 1.110 INCHES MINIMUM AND 1.140 INCHES MAXIMUM
OVERALL WIDTH: 1.110 INCHES MINIMUM AND 1.140 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TAB
Related Searches:
SA10918
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013117502
NSN
5961-01-311-7502
SA10918
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013117502
NSN
5961-01-311-7502
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.062 INCHES MAXIMUM
OVERALL LENGTH: 1.110 INCHES MINIMUM AND 1.140 INCHES MAXIMUM
OVERALL WIDTH: 1.110 INCHES MINIMUM AND 1.140 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TAB
Related Searches:
JANTX2N5415S
TRANSISTOR
NSN, MFG P/N
5961013118076
NSN
5961-01-311-8076
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: -1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N5415S
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/485
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/485 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
TRANSFER RATIO: 3.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 15.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -200.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -200.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
95-0064
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013118077
NSN
5961-01-311-8077
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.330 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 82577-H980108 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
H980108-001B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013118077
NSN
5961-01-311-8077
H980108-001B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013118077
NSN
5961-01-311-8077
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.330 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 82577-H980108 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
PPR1543
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013118077
NSN
5961-01-311-8077
MFG
MICROSEMI PPC INC
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.330 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 82577-H980108 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
MR180
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013118630
NSN
5961-01-311-8630
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
143329001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013119813
NSN
5961-01-311-9813
143329001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013119813
NSN
5961-01-311-9813
MFG
EATON CORPORATION
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
700PE140
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013119813
NSN
5961-01-311-9813
700PE140
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013119813
NSN
5961-01-311-9813
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
C431-1PD
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013119813
NSN
5961-01-311-9813
C431-1PD
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013119813
NSN
5961-01-311-9813
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
N0676YS140
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013119813
NSN
5961-01-311-9813
N0676YS140
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013119813
NSN
5961-01-311-9813
MFG
IXYS LONG BEACH INC.
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
38300006-1001
TRANSISTOR
NSN, MFG P/N
5961013119827
NSN
5961-01-311-9827
MFG
GENICOM CORP
Description
III END ITEM IDENTIFICATION: FLIGHT DATA INPUT OUTPUT, FDIO, CONTRACT FA01-84-C-00002
Related Searches:
BUT11
TRANSISTOR
NSN, MFG P/N
5961013119827
NSN
5961-01-311-9827
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
III END ITEM IDENTIFICATION: FLIGHT DATA INPUT OUTPUT, FDIO, CONTRACT FA01-84-C-00002
Related Searches:
F52003688
TRANSISTOR
NSN, MFG P/N
5961013119827
NSN
5961-01-311-9827
MFG
WESPERCORP FSG INC
Description
III END ITEM IDENTIFICATION: FLIGHT DATA INPUT OUTPUT, FDIO, CONTRACT FA01-84-C-00002
Related Searches:
38200004-1001
TRANSISTOR
NSN, MFG P/N
5961013119828
NSN
5961-01-311-9828
MFG
GENICOM CORP
Description
III END ITEM IDENTIFICATION: FLIGHT DATA INPUT OUTPUT, FDIO, CONTRACT FA01-84-C-00002
