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5961-00-785-6094

20 Products

481474-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007856094

NSN

5961-00-785-6094

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481474-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007856094

NSN

5961-00-785-6094

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

DESIGN CONTROL REFERENCE: 481474-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 3B150
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.015 INCHES MAXIMUM
OVERALL LENGTH: 3.515 INCHES MAXIMUM
OVERALL WIDTH: 1.015 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

JAN1N93A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007853219

NSN

5961-00-785-3219

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JAN1N93A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007853219

NSN

5961-00-785-3219

MFG

JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: -175.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS AND 25.00 AMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N93A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 95.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/293
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.725 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/293 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.328 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

SCB136556-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007853219

NSN

5961-00-785-3219

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SCB136556-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007853219

NSN

5961-00-785-3219

MFG

ENTRON INDUSTRIES LIMITED PARTNERSHIP DBA ENTRON INDUSTRIES PROPERTY DIV

Description

CURRENT RATING PER CHARACTERISTIC: -175.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS AND 25.00 AMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N93A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 95.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/293
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.725 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/293 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.328 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

353-1944-00

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007853635

NSN

5961-00-785-3635

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353-1944-00

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007853635

NSN

5961-00-785-3635

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE

353-1944-000

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007853635

NSN

5961-00-785-3635

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353-1944-000

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007853635

NSN

5961-00-785-3635

MFG

ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE

493S300Z2

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007853635

NSN

5961-00-785-3635

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493S300Z2

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007853635

NSN

5961-00-785-3635

MFG

SEMITRONICS CORP

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE

50M150ZB2

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007853635

NSN

5961-00-785-3635

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50M150ZB2

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007853635

NSN

5961-00-785-3635

MFG

FREESCALE SEMICONDUCTOR INC.

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE

DZ880524C

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007853635

NSN

5961-00-785-3635

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DZ880524C

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007853635

NSN

5961-00-785-3635

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE

146473-6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007854735

NSN

5961-00-785-4735

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146473-6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007854735

NSN

5961-00-785-4735

MFG

EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 00752
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 146473-6
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.4 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N3156

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007854735

NSN

5961-00-785-4735

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1N3156

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007854735

NSN

5961-00-785-4735

MFG

TELCOM SEMICONDUCTOR INC

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 00752
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 146473-6
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.4 MAXIMUM NOMINAL REGULATOR VOLTAGE

545-0725-004

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961007855724

NSN

5961-00-785-5724

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545-0725-004

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961007855724

NSN

5961-00-785-5724

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

COAXIAL CONNECTOR SERIES DESIGNATION: ANY ACCEPTABLE
INPUT CONTACT TYPE: FEMALE
INPUT TERMINAL TYPE: COAXIAL CABLE

8-80-021

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961007855724

NSN

5961-00-785-5724

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8-80-021

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961007855724

NSN

5961-00-785-5724

MFG

ARGON ST INC .

Description

COAXIAL CONNECTOR SERIES DESIGNATION: ANY ACCEPTABLE
INPUT CONTACT TYPE: FEMALE
INPUT TERMINAL TYPE: COAXIAL CABLE

7202618G2

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961007855747

NSN

5961-00-785-5747

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7202618G2

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961007855747

NSN

5961-00-785-5747

MFG

CANADIAN GENERAL ELECTRIC CO LTD

Description

INPUT CONTACT TYPE: FEMALE
INPUT TERMINAL TYPE: ELECTRICAL CONTACT
OUTPUT CONTACT TYPE: FEMALE
OUTPUT TERMINAL TYPE: ELECTRICAL CONTACT

1N1200R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007856016

NSN

5961-00-785-6016

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1N1200R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007856016

NSN

5961-00-785-6016

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N1200R
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILE1AMEND2
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.443 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-E-1/1108 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-E-1 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF

2227185

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007856086

NSN

5961-00-785-6086

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2227185

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007856086

NSN

5961-00-785-6086

MFG

ITT CORPORATION

Description

DESIGN CONTROL REFERENCE: RD669
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 07933
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

RD669

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007856086

NSN

5961-00-785-6086

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RD669

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007856086

NSN

5961-00-785-6086

MFG

FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ

Description

DESIGN CONTROL REFERENCE: RD669
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 07933
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

480368-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007856090

NSN

5961-00-785-6090

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480368-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007856090

NSN

5961-00-785-6090

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 49956-480368 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

80-6913

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007856090

NSN

5961-00-785-6090

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80-6913

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007856090

NSN

5961-00-785-6090

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 49956-480368 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

A139P1R2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007856090

NSN

5961-00-785-6090

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A139P1R2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007856090

NSN

5961-00-785-6090

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 49956-480368 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

SES554

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007856090

NSN

5961-00-785-6090

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SES554

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007856090

NSN

5961-00-785-6090

MFG

SEMITRONICS CORP

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 49956-480368 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE