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5961-00-072-9409
20 Products
400-2367-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000729409
NSN
5961-00-072-9409
400-2367-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000729409
NSN
5961-00-072-9409
MFG
EASTMAN KODAK CO COMMERCIAL & GOVERNMENT SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
656076
TRANSISTOR
NSN, MFG P/N
5961000729718
NSN
5961-00-072-9718
MFG
RAYTHEON TECHNICAL SERVICES COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 0.40 AMPERES MAXIMUM BASE CURRENT, DC AND 0.40 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.375 INCHES MAXIMUM
OVERALL LENGTH: 0.330 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 2.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 375.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
TRSP3505S
TRANSISTOR
NSN, MFG P/N
5961000729718
NSN
5961-00-072-9718
MFG
INDUSTRO TRANSISTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 0.40 AMPERES MAXIMUM BASE CURRENT, DC AND 0.40 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.375 INCHES MAXIMUM
OVERALL LENGTH: 0.330 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 2.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 375.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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BUC71307-501
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000729788
NSN
5961-00-072-9788
BUC71307-501
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000729788
NSN
5961-00-072-9788
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN MISSION SYSTEMS
Description
MAJOR COMPONENTS: PRINTED WIRING BOARD 1; DIODE 2
Related Searches:
22512
TRANSISTOR
NSN, MFG P/N
5961000730568
NSN
5961-00-073-0568
MFG
WHITTAKER CORP WHITTAKER ELECTRONIC SYSTEMS DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1988228ITEM1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000730603
NSN
5961-00-073-0603
1988228ITEM1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000730603
NSN
5961-00-073-0603
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
DESIGN CONTROL REFERENCE: 1988228ITEM1
MAJOR COMPONENTS: DIODE 2; PLATE 1
MANUFACTURERS CODE: 10001
THE MANUFACTURERS DATA:
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771069-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000730603
NSN
5961-00-073-0603
771069-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000730603
NSN
5961-00-073-0603
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
DESIGN CONTROL REFERENCE: 1988228ITEM1
MAJOR COMPONENTS: DIODE 2; PLATE 1
MANUFACTURERS CODE: 10001
THE MANUFACTURERS DATA:
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SV5080
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961000733641
NSN
5961-00-073-3641
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
Related Searches:
1085743
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000733736
NSN
5961-00-073-3736
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM BREAKDOWN VOLTAGE, DC
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1901-0075
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000733736
NSN
5961-00-073-3736
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
2105669
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000733736
NSN
5961-00-073-3736
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
174PM70038-01
TRANSISTOR
NSN, MFG P/N
5961000737658
NSN
5961-00-073-7658
MFG
GTE COMMUNICATION SYSTEMS CORP
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
232MT049G003
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000737950
NSN
5961-00-073-7950
232MT049G003
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000737950
NSN
5961-00-073-7950
MFG
RAYTHEON CO RAYTHEON SYSTEMS CO
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
OPERATING TEMP RANGE: -54.0 TO 95.0 DEG CELSIUS
OVERALL HEIGHT: 1.250 INCHES NOMINAL
OVERALL LENGTH: 0.656 INCHES NOMINAL
OVERALL WIDTH: 0.781 INCHES NOMINAL
SPECIAL FEATURES: 2 MTG NUTS EMBEDDED IN BOTTOM OF MOLDED CASE
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
232MT049G004
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000737951
NSN
5961-00-073-7951
232MT049G004
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000737951
NSN
5961-00-073-7951
MFG
RAYTHEON CO RAYTHEON SYSTEMS CO
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
OPERATING TEMP RANGE: -54.0 TO 95.0 DEG CELSIUS
OVERALL HEIGHT: 1.250 INCHES NOMINAL
OVERALL LENGTH: 0.656 INCHES NOMINAL
OVERALL WIDTH: 0.781 INCHES NOMINAL
SPECIAL FEATURES: MTG CONFIG,2 NUTS EMBEDDED IN BOTTOM OF MOLDED CASE
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
940595-1
TRANSISTOR
NSN, MFG P/N
5961000738892
NSN
5961-00-073-8892
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.312 INCHES NOMINAL
OVERALL LENGTH: 0.230 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
USN2N1613
TRANSISTOR
NSN, MFG P/N
5961000738892
NSN
5961-00-073-8892
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.312 INCHES NOMINAL
OVERALL LENGTH: 0.230 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
1N3518
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000739019
NSN
5961-00-073-9019
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4198 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
343-213-038
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000740349
NSN
5961-00-074-0349
343-213-038
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000740349
NSN
5961-00-074-0349
MFG
INTERSTATE ELECTRONICS CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 5000.00 MILLIAMPERES MAXIMUM PEAK POINT CURRENT AND 625.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 2.400 INCHES MAXIMUM
OVERALL HEIGHT: 0.219 INCHES MINIMUM AND 0.249 INCHES MAXIMUM
OVERALL LENGTH: 7.900 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS AND 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
ST12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000740349
NSN
5961-00-074-0349
MFG
ST-SEMICON INC
Description
CURRENT RATING PER CHARACTERISTIC: 5000.00 MILLIAMPERES MAXIMUM PEAK POINT CURRENT AND 625.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 2.400 INCHES MAXIMUM
OVERALL HEIGHT: 0.219 INCHES MINIMUM AND 0.249 INCHES MAXIMUM
OVERALL LENGTH: 7.900 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS AND 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
317-1001-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000741294
NSN
5961-00-074-1294
317-1001-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000741294
NSN
5961-00-074-1294
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
