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5961-00-201-5167

20 Products

15367

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961002015167

NSN

5961-00-201-5167

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15367

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961002015167

NSN

5961-00-201-5167

MFG

CESSNA AIRCRAFT CO ARC AVIONICS DIV

Description

ACCOMMODATED EQUIPMENT IDENTIFYING NUMBER: IN23B
COAXIAL CONNECTOR SERIES DESIGNATION: UHF
DESIGN CONTROL REFERENCE: 504-8631-003
III END ITEM IDENTIFICATION: TYPE NO. TN-129B/APR-9
INPUT CONTACT TYPE: FEMALE
INPUT TERMINAL TYPE: COAXIAL CABLE
MANUFACTURERS CODE: 13499
OPERATING FREQUENCY: 10.0 GIGAHERTZ NOMINAL
OUTPUT CONTACT TYPE: MALE
OVERALL HEIGHT: 1.500 INCHES NOMINAL
OVERALL LENGTH: 2.312 INCHES NOMINAL
OVERALL WIDTH: 1.812 INCHES NOMINAL
THE MANUFACTURERS DATA:

JAN2N1913

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961002009333

NSN

5961-00-200-9333

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JAN2N1913

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961002009333

NSN

5961-00-200-9333

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1000.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: TICONDEROGA CLASS CG (47); SUBMARINE ACOUSTIC SONAR SYSTEMS; SHIP, OHIO CLASS SSN (TRIDENT); SONAR, AN/BQQ-5 & 6; STURGEON CLASS SSN (637); LOS ANGELES CLASS SSN (688)
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.125 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.063 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM @MUST COMPLY WITH REQUIREMENTS OF DESC PRODUCTION STD NO. L01041; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY; WEAPON SYSTEM ESSENTIAL

L01041

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961002009333

NSN

5961-00-200-9333

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L01041

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961002009333

NSN

5961-00-200-9333

MFG

DLA LAND AND MARITIME

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1000.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: TICONDEROGA CLASS CG (47); SUBMARINE ACOUSTIC SONAR SYSTEMS; SHIP, OHIO CLASS SSN (TRIDENT); SONAR, AN/BQQ-5 & 6; STURGEON CLASS SSN (637); LOS ANGELES CLASS SSN (688)
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.125 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.063 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM @MUST COMPLY WITH REQUIREMENTS OF DESC PRODUCTION STD NO. L01041; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY; WEAPON SYSTEM ESSENTIAL

05000020

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002009390

NSN

5961-00-200-9390

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05000020

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002009390

NSN

5961-00-200-9390

MFG

DIGITEC CORP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, PEAK

MV833

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002009390

NSN

5961-00-200-9390

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MV833

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002009390

NSN

5961-00-200-9390

MFG

FREESCALE SEMICONDUCTOR INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, PEAK

10000140

TRANSISTOR

NSN, MFG P/N

5961002009392

NSN

5961-00-200-9392

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10000140

TRANSISTOR

NSN, MFG P/N

5961002009392

NSN

5961-00-200-9392

MFG

DIGITEC CORP

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.330 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

2N3567

TRANSISTOR

NSN, MFG P/N

5961002009392

NSN

5961-00-200-9392

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2N3567

TRANSISTOR

NSN, MFG P/N

5961002009392

NSN

5961-00-200-9392

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.330 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

723094-2

TRANSISTOR

NSN, MFG P/N

5961002009651

NSN

5961-00-200-9651

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723094-2

TRANSISTOR

NSN, MFG P/N

5961002009651

NSN

5961-00-200-9651

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 15.0 MAXIMUM GATE TO SOURCE VOLTAGE

SFE250

TRANSISTOR

NSN, MFG P/N

5961002009651

NSN

5961-00-200-9651

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SFE250

TRANSISTOR

NSN, MFG P/N

5961002009651

NSN

5961-00-200-9651

MFG

FREESCALE SEMICONDUCTOR INC.

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 15.0 MAXIMUM GATE TO SOURCE VOLTAGE

2N5197

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961002009750

NSN

5961-00-200-9750

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2N5197

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961002009750

NSN

5961-00-200-9750

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
DESIGN CONTROL REFERENCE: 5003-015
MANUFACTURERS CODE: 03626
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

5003-015

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961002009750

NSN

5961-00-200-9750

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5003-015

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961002009750

NSN

5961-00-200-9750

MFG

KAYPRO CORP

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
DESIGN CONTROL REFERENCE: 5003-015
MANUFACTURERS CODE: 03626
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

MFE3006

TRANSISTOR

NSN, MFG P/N

5961002009756

NSN

5961-00-200-9756

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MFE3006

TRANSISTOR

NSN, MFG P/N

5961002009756

NSN

5961-00-200-9756

MFG

FREESCALE SEMICONDUCTOR INC.

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.050 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 35.0 MAXIMUM GATE VOLTAGE, DC

TCRZS2491

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002011283

NSN

5961-00-201-1283

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TCRZS2491

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002011283

NSN

5961-00-201-1283

MFG

COMTEC INFORMATION SYSTEMS INC DIGITRONICS DIV

TCRZS2493

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002011318

NSN

5961-00-201-1318

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TCRZS2493

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002011318

NSN

5961-00-201-1318

MFG

COMTEC INFORMATION SYSTEMS INC DIGITRONICS DIV

652-1249

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961002015037

NSN

5961-00-201-5037

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652-1249

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961002015037

NSN

5961-00-201-5037

MFG

MICRO USPD INC

Description

III END ITEM IDENTIFICATION: E-2C ACFT
SPECIAL FEATURES: 2900VAC 400 HZ 3 PHASE INPUT VOLTAGE

7534342P0001

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961002015037

NSN

5961-00-201-5037

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7534342P0001

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961002015037

NSN

5961-00-201-5037

MFG

LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS

Description

III END ITEM IDENTIFICATION: E-2C ACFT
SPECIAL FEATURES: 2900VAC 400 HZ 3 PHASE INPUT VOLTAGE

SA2945

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961002015037

NSN

5961-00-201-5037

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SA2945

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961002015037

NSN

5961-00-201-5037

MFG

SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY

Description

III END ITEM IDENTIFICATION: E-2C ACFT
SPECIAL FEATURES: 2900VAC 400 HZ 3 PHASE INPUT VOLTAGE

401-0214-1

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961002015093

NSN

5961-00-201-5093

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401-0214-1

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961002015093

NSN

5961-00-201-5093

MFG

VOGUE INSTRUMENT CORP

TIC45

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961002015093

NSN

5961-00-201-5093

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TIC45

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961002015093

NSN

5961-00-201-5093

MFG

TEXAS INSTRUMENTS INC INFORMATION TECHNOLOGY GROUP

504-8631-003

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961002015167

NSN

5961-00-201-5167

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504-8631-003

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961002015167

NSN

5961-00-201-5167

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

ACCOMMODATED EQUIPMENT IDENTIFYING NUMBER: IN23B
COAXIAL CONNECTOR SERIES DESIGNATION: UHF
DESIGN CONTROL REFERENCE: 504-8631-003
III END ITEM IDENTIFICATION: TYPE NO. TN-129B/APR-9
INPUT CONTACT TYPE: FEMALE
INPUT TERMINAL TYPE: COAXIAL CABLE
MANUFACTURERS CODE: 13499
OPERATING FREQUENCY: 10.0 GIGAHERTZ NOMINAL
OUTPUT CONTACT TYPE: MALE
OVERALL HEIGHT: 1.500 INCHES NOMINAL
OVERALL LENGTH: 2.312 INCHES NOMINAL
OVERALL WIDTH: 1.812 INCHES NOMINAL
THE MANUFACTURERS DATA: