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5961-01-437-7384
20 Products
IXTM5N100A
TRANSISTOR
NSN, MFG P/N
5961014377384
NSN
5961-01-437-7384
MFG
IXYS CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM DRAIN CURRENT AND 22.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.495 INCHES MAXIMUM
OVERALL LENGTH: 1.540 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 90536-7920719 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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CM1001
TRANSISTOR
NSN, MFG P/N
5961014377384
NSN
5961-01-437-7384
MFG
MICROSEMI CORP. - POWER PRODUCTS GROUP DBA ADVANCED POWER TECHNOLOGY INC DIV MICROSEMI CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM DRAIN CURRENT AND 22.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.495 INCHES MAXIMUM
OVERALL LENGTH: 1.540 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 90536-7920719 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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IRFAG50
TRANSISTOR
NSN, MFG P/N
5961014377384
NSN
5961-01-437-7384
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM DRAIN CURRENT AND 22.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.495 INCHES MAXIMUM
OVERALL LENGTH: 1.540 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 90536-7920719 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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3N163
TRANSISTOR
NSN, MFG P/N
5961014377386
NSN
5961-01-437-7386
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
TRANSISTOR
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7920823-00
TRANSISTOR
NSN, MFG P/N
5961014377386
NSN
5961-01-437-7386
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
TRANSISTOR
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3N170
TRANSISTOR
NSN, MFG P/N
5961014377393
NSN
5961-01-437-7393
MFG
SOLITRON DEVICES INC.
Description
TRANSISTOR
Related Searches:
7920822-00
TRANSISTOR
NSN, MFG P/N
5961014377393
NSN
5961-01-437-7393
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
TRANSISTOR
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0M1985CSAT
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014377395
NSN
5961-01-437-7395
0M1985CSAT
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014377395
NSN
5961-01-437-7395
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
SEMICONDUCTOR DEVICE,DIODE
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206519-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014377395
NSN
5961-01-437-7395
MFG
TRANSISTOR DEVICES INC FLORIDA DIV
Description
SEMICONDUCTOR DEVICE,DIODE
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DD82F08K
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014377428
NSN
5961-01-437-7428
DD82F08K
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014377428
NSN
5961-01-437-7428
MFG
AEG CORP
Description
SEMICONDUCTOR DEVICES,UNITIZED
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GZ24426S
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014377647
NSN
5961-01-437-7647
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 46.0 GRAMS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS AND METAL
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 1.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 623.0 NOMINAL WORKING PEAK REVERSE VOLTAGE
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PHP440
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014377647
NSN
5961-01-437-7647
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 46.0 GRAMS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS AND METAL
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 1.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 623.0 NOMINAL WORKING PEAK REVERSE VOLTAGE
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019-005513-013
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014377757
NSN
5961-01-437-7757
019-005513-013
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014377757
NSN
5961-01-437-7757
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
Related Searches:
SL303100S
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014377757
NSN
5961-01-437-7757
SL303100S
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014377757
NSN
5961-01-437-7757
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
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958-118-0003
TRANSISTOR
NSN, MFG P/N
5961014378839
NSN
5961-01-437-8839
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS
Description
TRANSISTOR
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1N6279A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014378847
NSN
5961-01-437-8847
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
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KD321408
TRANSISTOR
NSN, MFG P/N
5961014378848
NSN
5961-01-437-8848
MFG
POWEREX INC
Description
TRANSISTOR
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KS625530
TRANSISTOR
NSN, MFG P/N
5961014378872
NSN
5961-01-437-8872
MFG
POWEREX INC
Description
TRANSISTOR
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585R834H04
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014378912
NSN
5961-01-437-8912
585R834H04
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014378912
NSN
5961-01-437-8912
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
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744963
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014378915
NSN
5961-01-437-8915
MFG
SPD ELECTRICAL SYSTEMS INC
Description
SEMICONDUCTOR DEVICE ASSEMBLY
