My Quote Request
No products added yet
5961-01-422-8739
20 Products
MMBT3640LT1
TRANSISTOR
NSN, MFG P/N
5961014228739
NSN
5961-01-422-8739
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
MMBT3640
TRANSISTOR
NSN, MFG P/N
5961014228739
NSN
5961-01-422-8739
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
TRANSISTOR
Related Searches:
151-5034-00
TRANSISTOR
NSN, MFG P/N
5961014228742
NSN
5961-01-422-8742
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
Related Searches:
NE73433-T1
TRANSISTOR
NSN, MFG P/N
5961014228742
NSN
5961-01-422-8742
MFG
CALIFORNIA EASTERN LABS
Description
TRANSISTOR
Related Searches:
151-5018-00
TRANSISTOR
NSN, MFG P/N
5961014228743
NSN
5961-01-422-8743
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
Related Searches:
SST441-T1
TRANSISTOR
NSN, MFG P/N
5961014228743
NSN
5961-01-422-8743
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
TRANSISTOR
Related Searches:
MUR105
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014229595
NSN
5961-01-422-9595
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: TEST POD SYSTEM
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
MA4E928B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014230080
NSN
5961-01-423-0080
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
FUNCTION FOR WHICH DESIGNED: DETECTOR
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: VIDEO IMPED. MIN. 2K, Z MAX, OHMS5K;OPERATING TEMPERATURE 150 CENTIFGRADE;THROUGH HOLE MOUNTING
Related Searches:
D235A128-15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014231529
NSN
5961-01-423-1529
D235A128-15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014231529
NSN
5961-01-423-1529
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MLL5245
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014231529
NSN
5961-01-423-1529
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
40211004135
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014231530
NSN
5961-01-423-1530
40211004135
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014231530
NSN
5961-01-423-1530
MFG
TADIRAN LTD
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
CDLL5231B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014231530
NSN
5961-01-423-1530
MFG
COMPENSATED DEVICES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
D235A128-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014231530
NSN
5961-01-423-1530
D235A128-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014231530
NSN
5961-01-423-1530
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MLL5231B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014231530
NSN
5961-01-423-1530
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
6815189
TRANSISTOR
NSN, MFG P/N
5961014231570
NSN
5961-01-423-1570
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SELECTED FOR FORWARD CURRENT TRANSFER RATIO = 60 MIN; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 53711-6815189 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
JANTX2N4150
TRANSISTOR
NSN, MFG P/N
5961014231570
NSN
5961-01-423-1570
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SELECTED FOR FORWARD CURRENT TRANSFER RATIO = 60 MIN; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 53711-6815189 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
5906215
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014234998
NSN
5961-01-423-4998
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 0.60 MILLIAMPERES NOMINAL REPETITIVE PEAK FORWARD CURRENT AND 17.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.136 INCHES
OVERALL LENGTH: 0.800 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 BINDING POST
TEST DATA DOCUMENT: 53711-5902615 DRAWING
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
S6215
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014234998
NSN
5961-01-423-4998
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 0.60 MILLIAMPERES NOMINAL REPETITIVE PEAK FORWARD CURRENT AND 17.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.136 INCHES
OVERALL LENGTH: 0.800 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 BINDING POST
TEST DATA DOCUMENT: 53711-5902615 DRAWING
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
SEN-1165
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014234998
NSN
5961-01-423-4998
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
CURRENT RATING PER CHARACTERISTIC: 0.60 MILLIAMPERES NOMINAL REPETITIVE PEAK FORWARD CURRENT AND 17.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.136 INCHES
OVERALL LENGTH: 0.800 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 BINDING POST
TEST DATA DOCUMENT: 53711-5902615 DRAWING
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
UZ7715V
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014234998
NSN
5961-01-423-4998
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.60 MILLIAMPERES NOMINAL REPETITIVE PEAK FORWARD CURRENT AND 17.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.136 INCHES
OVERALL LENGTH: 0.800 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 BINDING POST
TEST DATA DOCUMENT: 53711-5902615 DRAWING
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
