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5961-01-390-7215
20 Products
SLB361G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013907215
NSN
5961-01-390-7215
MFG
INTER-MARKET INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
922-6523-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013908881
NSN
5961-01-390-8881
922-6523-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013908881
NSN
5961-01-390-8881
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.071 INCHES MAXIMUM
OVERALL LENGTH: 0.095 INCHES MINIMUM AND 0.103 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
BB219
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013908881
NSN
5961-01-390-8881
MFG
PHILIPS CIRCUIT ASSEMBLIES
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.071 INCHES MAXIMUM
OVERALL LENGTH: 0.095 INCHES MINIMUM AND 0.103 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
632015-03/1
TRANSISTOR
NSN, MFG P/N
5961013908913
NSN
5961-01-390-8913
MFG
BAE SYSTEMS CONTROLS INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -0.75 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.400 INCHES MAXIMUM
OVERALL LENGTH: 0.758 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.125 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
94-7075
TRANSISTOR
NSN, MFG P/N
5961013908913
NSN
5961-01-390-8913
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -0.75 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.400 INCHES MAXIMUM
OVERALL LENGTH: 0.758 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.125 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
446061-0002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013910200
NSN
5961-01-391-0200
446061-0002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013910200
NSN
5961-01-391-0200
MFG
THALES ATM INC.
Description
III END ITEM IDENTIFICATION: DISTANCE MEASURING EQUIPMENT, ASII (DME ASII)
Related Searches:
AND8010SALB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013910200
NSN
5961-01-391-0200
AND8010SALB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013910200
NSN
5961-01-391-0200
MFG
PURDY WILLIAM J CO
Description
III END ITEM IDENTIFICATION: DISTANCE MEASURING EQUIPMENT, ASII (DME ASII)
Related Searches:
LA8041R11B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013910200
NSN
5961-01-391-0200
LA8041R11B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013910200
NSN
5961-01-391-0200
MFG
ALTAIR EXCHANGE CORP
Description
III END ITEM IDENTIFICATION: DISTANCE MEASURING EQUIPMENT, ASII (DME ASII)
Related Searches:
046C02-0002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013910214
NSN
5961-01-391-0214
046C02-0002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013910214
NSN
5961-01-391-0214
MFG
THALES ATM INC.
Description
III END ITEM IDENTIFICATION: PORTABLE ILS RECEIVER (PIR)
Related Searches:
MBR330P
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013910214
NSN
5961-01-391-0214
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
III END ITEM IDENTIFICATION: PORTABLE ILS RECEIVER (PIR)
Related Searches:
7-356-000152
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013911076
NSN
5961-01-391-1076
7-356-000152
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013911076
NSN
5961-01-391-1076
MFG
GROVE U.S. L.L.C
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 2 CENTER TAP 1 PHASE
III END ITEM IDENTIFICATION: 2320-01-354-3387
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY: 3 QUICK DISCONNECT, MALE
Related Searches:
SCPA2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013911076
NSN
5961-01-391-1076
MFG
REVLON INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 2 CENTER TAP 1 PHASE
III END ITEM IDENTIFICATION: 2320-01-354-3387
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY: 3 QUICK DISCONNECT, MALE
Related Searches:
100H109PC41
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013911757
NSN
5961-01-391-1757
100H109PC41
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013911757
NSN
5961-01-391-1757
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES POWER CONTROL SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 4A11701H01
MANUFACTURERS CODE: 04804
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
100H121PC111
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013911758
NSN
5961-01-391-1758
100H121PC111
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013911758
NSN
5961-01-391-1758
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES POWER CONTROL SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 4A11701H02
MANUFACTURERS CODE: 04804
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
100H109PC40
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013911765
NSN
5961-01-391-1765
100H109PC40
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013911765
NSN
5961-01-391-1765
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES POWER CONTROL SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 4A11701H03
MANUFACTURERS CODE: 04804
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
LDZ71/6A5T
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013913012
NSN
5961-01-391-3012
LDZ71/6A5T
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013913012
NSN
5961-01-391-3012
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
OVERALL HEIGHT: 0.030 INCHES MINIMUM AND 0.040 INCHES MAXIMUM
OVERALL LENGTH: 0.070 INCHES MINIMUM AND 0.078 INCHES MAXIMUM
OVERALL WIDTH: 0.035 INCHES MINIMUM AND 0.043 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 BONDING PAD
Related Searches:
20-301A
TRANSISTOR
NSN, MFG P/N
5961013913174
NSN
5961-01-391-3174
MFG
WILTRON CO
Description
TRANSISTOR
Related Searches:
50-LM301A
TRANSISTOR
NSN, MFG P/N
5961013913174
NSN
5961-01-391-3174
MFG
ANRITSU COMPANY
Description
TRANSISTOR
Related Searches:
171280-02
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013913735
NSN
5961-01-391-3735
171280-02
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013913735
NSN
5961-01-391-3735
MFG
GE AVIATION SYSTEMS LLC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 400.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL AREAS IAW MIL-STD-2000 PARA. 5.4.17.2 GOLD
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-254AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.560 INCHES MAXIMUM
OVERALL LENGTH: 0.990 INCHES MAXIMUM
OVERALL WIDTH: 0.545 INCHES MAXIMUM
RESPONSE TIME: 35.0 NANOSECONDS MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 35351-171280 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
1N6657LTXV
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013913735
NSN
5961-01-391-3735
1N6657LTXV
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013913735
NSN
5961-01-391-3735
MFG
SOLID STATE DEVICES INC.
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 400.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL AREAS IAW MIL-STD-2000 PARA. 5.4.17.2 GOLD
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-254AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.560 INCHES MAXIMUM
OVERALL LENGTH: 0.990 INCHES MAXIMUM
OVERALL WIDTH: 0.545 INCHES MAXIMUM
RESPONSE TIME: 35.0 NANOSECONDS MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 35351-171280 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
