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5961-01-074-2230

20 Products

SJ4694

TRANSISTOR

NSN, MFG P/N

5961010742230

NSN

5961-01-074-2230

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SJ4694

TRANSISTOR

NSN, MFG P/N

5961010742230

NSN

5961-01-074-2230

MFG

FREESCALE SEMICONDUCTOR INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON

FBP-00-013

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010741595

NSN

5961-01-074-1595

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FBP-00-013

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010741595

NSN

5961-01-074-1595

MFG

VEECO INSTRUMENTS INC LAMBDA DIV

Description

CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 2.952 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.049 INCHES MINIMUM AND 1.067 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: INTERNAL JUNCTION CONFIGURATION ARRANGEMENT PNPN
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD AND 1 WIRE HOOK
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MINIMUM REVERSE VOLTAGE, PEAK

586050-6

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010741652

NSN

5961-01-074-1652

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586050-6

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010741652

NSN

5961-01-074-1652

MFG

RAYTHEON COMPANY DBA RAYTHEON

980893-3

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010741652

NSN

5961-01-074-1652

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980893-3

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010741652

NSN

5961-01-074-1652

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

ED5918

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010741652

NSN

5961-01-074-1652

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ED5918

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010741652

NSN

5961-01-074-1652

MFG

L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION

VK647

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010741652

NSN

5961-01-074-1652

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VK647

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010741652

NSN

5961-01-074-1652

MFG

ELECTRONIC DEVICES INC DBA E D I

586462-4

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010741654

NSN

5961-01-074-1654

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586462-4

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010741654

NSN

5961-01-074-1654

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

SPECIAL FEATURES: ENCAPSULATED IN ALUMINUM CASE;2.250 IN. LG;0.344 IN. W;0.375 IN. H

SCPA3F

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010741654

NSN

5961-01-074-1654

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SCPA3F

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010741654

NSN

5961-01-074-1654

MFG

SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY

Description

SPECIAL FEATURES: ENCAPSULATED IN ALUMINUM CASE;2.250 IN. LG;0.344 IN. W;0.375 IN. H

2902746-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010741778

NSN

5961-01-074-1778

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2902746-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010741778

NSN

5961-01-074-1778

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

DESIGN CONTROL REFERENCE: 2902746-3
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 10001
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2902746 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK

5082-3063

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010741778

NSN

5961-01-074-1778

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5082-3063

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010741778

NSN

5961-01-074-1778

MFG

HEWLETT PACKARD CO

Description

DESIGN CONTROL REFERENCE: 2902746-3
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 10001
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2902746 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK

MA47633

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010741778

NSN

5961-01-074-1778

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MA47633

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010741778

NSN

5961-01-074-1778

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

DESIGN CONTROL REFERENCE: 2902746-3
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 10001
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2902746 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N5391

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010741839

NSN

5961-01-074-1839

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1N5391

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010741839

NSN

5961-01-074-1839

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-15
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK

200C02002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010741839

NSN

5961-01-074-1839

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200C02002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010741839

NSN

5961-01-074-1839

MFG

SYKES DATATRONICS INC

Description

CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-15
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK

90346-056

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010741840

NSN

5961-01-074-1840

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90346-056

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010741840

NSN

5961-01-074-1840

MFG

CALCOMP INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON

12402-011

TRANSISTOR

NSN, MFG P/N

5961010742224

NSN

5961-01-074-2224

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12402-011

TRANSISTOR

NSN, MFG P/N

5961010742224

NSN

5961-01-074-2224

MFG

CALCOMP INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON

90326-101

TRANSISTOR

NSN, MFG P/N

5961010742225

NSN

5961-01-074-2225

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90326-101

TRANSISTOR

NSN, MFG P/N

5961010742225

NSN

5961-01-074-2225

MFG

CALCOMP INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON

18702-001

TRANSISTOR

NSN, MFG P/N

5961010742228

NSN

5961-01-074-2228

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18702-001

TRANSISTOR

NSN, MFG P/N

5961010742228

NSN

5961-01-074-2228

MFG

CENTURY DATA SYSTEMS

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON

19086-001

TRANSISTOR

NSN, MFG P/N

5961010742229

NSN

5961-01-074-2229

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19086-001

TRANSISTOR

NSN, MFG P/N

5961010742229

NSN

5961-01-074-2229

MFG

CALCOMP INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON

19012-001

TRANSISTOR

NSN, MFG P/N

5961010742230

NSN

5961-01-074-2230

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19012-001

TRANSISTOR

NSN, MFG P/N

5961010742230

NSN

5961-01-074-2230

MFG

CALCOMP INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON

72160

TRANSISTOR

NSN, MFG P/N

5961010742230

NSN

5961-01-074-2230

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72160

TRANSISTOR

NSN, MFG P/N

5961010742230

NSN

5961-01-074-2230

MFG

INTERSIL CORPORATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON