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5961-01-308-6841
20 Products
2920593-2
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013086841
NSN
5961-01-308-6841
2920593-2
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013086841
NSN
5961-01-308-6841
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
DESIGN CONTROL REFERENCE: 2920593-2
III END ITEM IDENTIFICATION: AN/SPG-55B,MOD10
MANUFACTURERS CODE: 10001
THE MANUFACTURERS DATA:
Related Searches:
A239300008
TRANSISTOR
NSN, MFG P/N
5961013087715
NSN
5961-01-308-7715
MFG
TYCO HEALTHCARE GROUP LP DBA VALLEY LAB DIV VALLEYLAB
Description
DESIGN CONTROL REFERENCE: A239300008
MANUFACTURERS CODE: 52385
SPECIAL FEATURES: POWER; END ITEM APPLICATION 6515-00-000-0069; ELECTRO SURGICAL APPARATUS; CAGE 52385; P/N SURGISTAT
THE MANUFACTURERS DATA:
Related Searches:
62-0410-001
TRANSISTOR
NSN, MFG P/N
5961013087716
NSN
5961-01-308-7716
MFG
ASPEN LABS INC SUB OF ZIMMER INC
Description
DESIGN CONTROL REFERENCE: 62-0410-001
MANUFACTURERS CODE: 4W718
SPECIAL FEATURES: END ITEM APPLICATION 6515-00-000-0069; ELECTROSURGICAL APPARATUS
THE MANUFACTURERS DATA:
Related Searches:
476911
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013087802
NSN
5961-01-308-7802
MFG
FLUKE CORPORATION
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
386-0867-00
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013087892
NSN
5961-01-308-7892
386-0867-00
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013087892
NSN
5961-01-308-7892
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
RETAINER,SEMICONDUCTOR DEVICE
Related Searches:
616147-901
TRANSISTOR
NSN, MFG P/N
5961013087929
NSN
5961-01-308-7929
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
DESIGN CONTROL REFERENCE: 616147-901
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
MANUFACTURERS CODE: 37695
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.219 INCHES MAXIMUM
OVERALL LENGTH: 0.188 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.016 INCHES MINIMUM AND 0.019 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
16105-004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013088620
NSN
5961-01-308-8620
MFG
DYNALEC CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4565A-1
FEATURES PROVIDED: BURN IN AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
III END ITEM IDENTIFICATION: 6625-01-237-4658 TEST SET,ANTENNA DRIVE
III PRECIOUS MATERIAL: SILVER OR GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE SILVER OR TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/452
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDU
Related Searches:
JANTX1N4565A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013088620
NSN
5961-01-308-8620
JANTX1N4565A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013088620
NSN
5961-01-308-8620
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4565A-1
FEATURES PROVIDED: BURN IN AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
III END ITEM IDENTIFICATION: 6625-01-237-4658 TEST SET,ANTENNA DRIVE
III PRECIOUS MATERIAL: SILVER OR GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE SILVER OR TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/452
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDU
Related Searches:
19A115617P2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013088621
NSN
5961-01-308-8621
19A115617P2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013088621
NSN
5961-01-308-8621
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE AND 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND REVERSE POLARITY
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL AND GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.437 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
F3B3R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013088621
NSN
5961-01-308-8621
MFG
EDAL INDUSTRIES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE AND 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND REVERSE POLARITY
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL AND GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.437 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
ECG5140A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013089816
NSN
5961-01-308-9816
MFG
AVOX SYSTEMS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JTX1N4148-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013089817
NSN
5961-01-308-9817
JTX1N4148-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013089817
NSN
5961-01-308-9817
MFG
SIKORSKY AIRCRAFT CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N2537
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013089818
NSN
5961-01-308-9818
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
143201118
TRANSISTOR
NSN, MFG P/N
5961013090056
NSN
5961-01-309-0056
MFG
EATON CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES NOMINAL COLLECTOR CURRENT, DC AND 10.00 AMPERES NOMINAL SOURCE CURRENT
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 NOMINAL EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
FST6035
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013090460
NSN
5961-01-309-0460
FST6035
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013090460
NSN
5961-01-309-0460
MFG
MICROSEMI CORP-COLORADO
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 10.2 MILLIMETERS MAXIMUM
OVERALL LENGTH: 61.2 MILLIMETERS MAXIMUM
OVERALL WIDTH: 25.7 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 12.9 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 9 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
20-01155-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013091127
NSN
5961-01-309-1127
20-01155-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013091127
NSN
5961-01-309-1127
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
A3012708-1
TRANSISTOR
NSN, MFG P/N
5961013091315
NSN
5961-01-309-1315
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 400.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-A3012708 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
SFE1624H
TRANSISTOR
NSN, MFG P/N
5961013091315
NSN
5961-01-309-1315
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 400.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-A3012708 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
V10421
TRANSISTOR
NSN, MFG P/N
5961013091315
NSN
5961-01-309-1315
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 400.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-A3012708 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
7110346-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013091370
NSN
5961-01-309-1370
7110346-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013091370
NSN
5961-01-309-1370
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DESIGN CONTROL REFERENCE: 7110346-001
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 93322
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES NOMINAL
OVERALL LENGTH: 0.357 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 23.1 MAXIMUM BREAKDOWN VOLTAGE, DC
