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5961-01-249-2656
20 Products
350RA100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012492656
NSN
5961-01-249-2656
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 350.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 4.00 AMPERES MAXIMUM GATE TRIGGER CURRENT, PEAK AND 10000.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
FEATURES PROVIDED: BURN IN
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 3B150
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: G161267-1
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 10.751 INCHES MINIMUM AND 11.323 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.631 INCHES MINIMUM AND 1.750 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 3.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMI
Related Searches:
C350P
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012491039
NSN
5961-01-249-1039
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
(NON-CORE DATA) DUMMY TERMINAL QUANTITY: 1
CURRENT RATING PER CHARACTERISTIC: 180.00 AMPERES MAXIMUM ON-STATE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.650 INCHES MAXIMUM
OVERALL LENGTH: 0.565 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: INTERNAL JUNCTION CONFIGURATION, PNPNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.6 MAXIMUM ON-STATE VOLTAGE, DC
Related Searches:
143328004
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012491873
NSN
5961-01-249-1873
143328004
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012491873
NSN
5961-01-249-1873
MFG
EATON CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-94
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 8.327 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.227 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
81RLB120T62
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012491873
NSN
5961-01-249-1873
81RLB120T62
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012491873
NSN
5961-01-249-1873
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-94
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 8.327 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.227 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
C158PB
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012491873
NSN
5961-01-249-1873
C158PB
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012491873
NSN
5961-01-249-1873
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-94
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 8.327 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.227 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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NL-F158PB
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012491873
NSN
5961-01-249-1873
NL-F158PB
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012491873
NSN
5961-01-249-1873
MFG
NATIONAL ELECTRONICS DIV OF RICHARDSON ELECTRONICS LTD
Description
CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-94
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 8.327 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.227 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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T500148004A1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012491873
NSN
5961-01-249-1873
T500148004A1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012491873
NSN
5961-01-249-1873
MFG
WESTINGHOUSE ELECTRIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-94
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 8.327 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.227 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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29676-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012492392
NSN
5961-01-249-2392
29676-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012492392
NSN
5961-01-249-2392
MFG
L-3 SERVICES INC. DBA LINKABIT DIV LINKABIT
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: DEMOD DECODER
MAJOR COMPONENTS: CONTAINS 26 PIN,CONNECTOR INSERTS; 32 JANTXV1N5806 DIODES AND 16 JANTXV1N6462 DIODES
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
0410-001
TRANSISTOR
NSN, MFG P/N
5961012492469
NSN
5961-01-249-2469
MFG
ASPEN LABS INC SUB OF ZIMMER INC
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 0410-001
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 4W718
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 65.0 DEG CELSIUS CASE AND 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.000 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS NOMINAL OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: USED W/ELECTROSURGICAL APPARATUS,MDL. MF 360A,NSN 6515-00-000-0069
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CLAMP
THE MANUFACTURERS DATA:
TRANSFER RATIO: 30.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
STI-430HV
TRANSISTOR
NSN, MFG P/N
5961012492469
NSN
5961-01-249-2469
MFG
SEMICONDUCTOR TECHNOLOGY INC DBA S T I
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 0410-001
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 4W718
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 65.0 DEG CELSIUS CASE AND 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.000 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS NOMINAL OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: USED W/ELECTROSURGICAL APPARATUS,MDL. MF 360A,NSN 6515-00-000-0069
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CLAMP
THE MANUFACTURERS DATA:
TRANSFER RATIO: 30.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
143117054
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012492652
NSN
5961-01-249-2652
MFG
EATON CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
80-6335
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012492652
NSN
5961-01-249-2652
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
G160637-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012492653
NSN
5961-01-249-2653
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
R5001015XXWA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012492653
NSN
5961-01-249-2653
R5001015XXWA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012492653
NSN
5961-01-249-2653
MFG
POWEREX INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
150KR100A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012492654
NSN
5961-01-249-2654
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
G160637-1R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012492654
NSN
5961-01-249-2654
G160637-1R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012492654
NSN
5961-01-249-2654
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
R5AL1215XXWL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012492654
NSN
5961-01-249-2654
R5AL1215XXWL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012492654
NSN
5961-01-249-2654
MFG
POWEREX INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
301UR100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012492655
NSN
5961-01-249-2655
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
G161266-1R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012492655
NSN
5961-01-249-2655
G161266-1R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012492655
NSN
5961-01-249-2655
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
G161267-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012492656
NSN
5961-01-249-2656
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 350.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 4.00 AMPERES MAXIMUM GATE TRIGGER CURRENT, PEAK AND 10000.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
FEATURES PROVIDED: BURN IN
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 3B150
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: G161267-1
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 10.751 INCHES MINIMUM AND 11.323 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.631 INCHES MINIMUM AND 1.750 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 3.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMI
