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5961-01-408-9044
20 Products
1N6642UJTX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014089044
NSN
5961-01-408-9044
1N6642UJTX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014089044
NSN
5961-01-408-9044
MFG
MICRO USPD INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
9141-5013-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014089044
NSN
5961-01-408-9044
9141-5013-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014089044
NSN
5961-01-408-9044
MFG
BAE SYSTEMS INTEGRATED DEFENSE SOLUTIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
CS91-1375-300
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014089044
NSN
5961-01-408-9044
CS91-1375-300
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014089044
NSN
5961-01-408-9044
MFG
BAE SYSTEMS OPERATIONS LTD
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
9102-1301-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014089045
NSN
5961-01-408-9045
9102-1301-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014089045
NSN
5961-01-408-9045
MFG
BAE SYSTEMS INTEGRATED DEFENSE SOLUTIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
8879000098-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014089107
NSN
5961-01-408-9107
8879000098-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014089107
NSN
5961-01-408-9107
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: APN-232 RDR TRANS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
MAJOR COMPONENTS: DIODES 2
MANUFACTURERS CODE: 57057
MFR SOURCE CONTROLLING REFERENCE: 8879000098-1
OVERALL DEPTH: 0.005 INCHES NOMINAL
OVERALL LENGTH: 0.045 INCHES NOMINAL
OVERALL WIDTH: 0.028 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ESD
Related Searches:
DME2051-98
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014089107
NSN
5961-01-408-9107
DME2051-98
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014089107
NSN
5961-01-408-9107
MFG
SKYWORKS SOLUTIONS INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: APN-232 RDR TRANS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
MAJOR COMPONENTS: DIODES 2
MANUFACTURERS CODE: 57057
MFR SOURCE CONTROLLING REFERENCE: 8879000098-1
OVERALL DEPTH: 0.005 INCHES NOMINAL
OVERALL LENGTH: 0.045 INCHES NOMINAL
OVERALL WIDTH: 0.028 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ESD
Related Searches:
232292-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014089158
NSN
5961-01-408-9158
MFG
CUBIC DEFENSE APPLICATIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SDR606TX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014089158
NSN
5961-01-408-9158
MFG
SOLID STATE DEVICES INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
D235A135-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014089159
NSN
5961-01-408-9159
D235A135-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014089159
NSN
5961-01-408-9159
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
D235A134-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014089163
NSN
5961-01-408-9163
D235A134-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014089163
NSN
5961-01-408-9163
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SS7483
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014089163
NSN
5961-01-408-9163
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
UES1105HR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014089163
NSN
5961-01-408-9163
MFG
MICRO USPD INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BUV41
TRANSISTOR
NSN, MFG P/N
5961014090458
NSN
5961-01-409-0458
MFG
ADVANCED SEMICONDUCTOR INC. DBA A S I
Description
TRANSISTOR
Related Searches:
BYT30P800
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014090466
NSN
5961-01-409-0466
MFG
IXYS CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MUR880
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014090470
NSN
5961-01-409-0470
MFG
INTERSIL CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
A239-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014090477
NSN
5961-01-409-0477
MFG
HORIZON AEROSPACE LLC DBA MAGNETICS DIVISION
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: ROYAL AIR FORCE
III END ITEM IDENTIFICATION: INDICATOR,TEMPERATURE, POWER TURBINE INLET
Related Searches:
1KAB60E
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014090605
NSN
5961-01-409-0605
1KAB60E
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014090605
NSN
5961-01-409-0605
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 52.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REPETITIVE PEAK REVERSE VOLTAGE
OPERATING TEMP RANGE: -40.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 10.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 9.7 MILLIMETERS NOMINAL
OVERALL WIDTH: 9.7 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
A3088906-1
TRANSISTOR
NSN, MFG P/N
5961014091932
NSN
5961-01-409-1932
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.310 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 04713-MPS6724 MANUFACTURERS SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 12.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
MPS6724
TRANSISTOR
NSN, MFG P/N
5961014091932
NSN
5961-01-409-1932
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.310 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 04713-MPS6724 MANUFACTURERS SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 12.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
BZX79C11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014091935
NSN
5961-01-409-1935
MFG
NORTH AMERICAN PHILIPS CORP PHILIPS COMPONENTS DISCRETE PRODUCTS DIV
Description
III END ITEM IDENTIFICATION: 6625013636212 E/I CAGE 34280
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 4.25 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.00 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
