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5961-01-271-7375
20 Products
550837-01
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012717375
NSN
5961-01-271-7375
550837-01
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012717375
NSN
5961-01-271-7375
MFG
ALFA LAVAL INC .
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
78200244-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012717435
NSN
5961-01-271-7435
78200244-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012717435
NSN
5961-01-271-7435
MFG
GETRONICS GOVERNMENT SOLUTIONS LLC
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
78200321-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012717436
NSN
5961-01-271-7436
78200321-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012717436
NSN
5961-01-271-7436
MFG
GETRONICS GOVERNMENT SOLUTIONS LLC
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
G105307-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012718216
NSN
5961-01-271-8216
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
FUNCTION FOR WHICH DESIGNED: RECTIFIER
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
2445-4228
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012718235
NSN
5961-01-271-8235
2445-4228
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012718235
NSN
5961-01-271-8235
MFG
GSE HOLDINGS INC. DBA ITW MILITARY GSE DIV ITW MILITARY GSE
Description
MAJOR COMPONENTS: PRINTED WIRING BOARD 1; CRYSTAL DIODE 22,PLUG 3
MOUNTING CONFIGURATION: FOUR 0.150 IN. DIA MTG HOLES ON 5.000 IN. BY 2.500 IN. MTG CENTERS
OVERALL LENGTH: 5.500 INCHES NOMINAL
OVERALL WIDTH: 3.000 INCHES NOMINAL
Related Searches:
1N4626
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012718531
NSN
5961-01-271-8531
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, PEAK
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-353-3591 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
353-3591-500
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012718531
NSN
5961-01-271-8531
353-3591-500
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012718531
NSN
5961-01-271-8531
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, PEAK
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-353-3591 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
6P005
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961012718634
NSN
5961-01-271-8634
MFG
W. W. GRAINGER INC. DBA GRAINGER DIV GOVERNMENT SALES DIVISION
Description
III PRECIOUS MATERIAL: SILVER
OVERALL LENGTH: 1.813 INCHES NOMINAL
OVERALL WIDTH: 1.313 INCHES NOMINAL
SPECIAL FEATURES: FIXED POSITION MOUNTING; TEMPERATURE RANGE: -40 TO +158 DEG F; MAXIMUM BALLAST AMPS IS 8.3; MAXIMUM WATTS IS 1800; VOLTAGE RATING IS 120 VOLTS; DEPTH IS 13/16IN.; HOUSING CONSTRUCTED OF HIGH IMPACT POLYCARBONATE; COMPONENTS SHALL CONSIST OF A METAL FILM
~1: RESISTOR, DUAL TEMPERATURE COMPENSATING BI-METAL BLADES,SNAP ACTION CONTACT BLADES, CHEMICALLY TREATED/POLYMER ENCAPSULATED CADMIUM SULFIDE PHOTOCELL AND SILVER ALLOY CONTACTS
Related Searches:
K4021
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961012718634
NSN
5961-01-271-8634
MFG
INTERMATIC INC
Description
III PRECIOUS MATERIAL: SILVER
OVERALL LENGTH: 1.813 INCHES NOMINAL
OVERALL WIDTH: 1.313 INCHES NOMINAL
SPECIAL FEATURES: FIXED POSITION MOUNTING; TEMPERATURE RANGE: -40 TO +158 DEG F; MAXIMUM BALLAST AMPS IS 8.3; MAXIMUM WATTS IS 1800; VOLTAGE RATING IS 120 VOLTS; DEPTH IS 13/16IN.; HOUSING CONSTRUCTED OF HIGH IMPACT POLYCARBONATE; COMPONENTS SHALL CONSIST OF A METAL FILM
~1: RESISTOR, DUAL TEMPERATURE COMPENSATING BI-METAL BLADES,SNAP ACTION CONTACT BLADES, CHEMICALLY TREATED/POLYMER ENCAPSULATED CADMIUM SULFIDE PHOTOCELL AND SILVER ALLOY CONTACTS
Related Searches:
G195307-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012719917
NSN
5961-01-271-9917
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
FUNCTION FOR WHICH DESIGNED: RECTIFIER
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
TVS360
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012719918
NSN
5961-01-271-9918
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.40 AMPERES MAXIMUM PEAK PULSE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
800630
TRANSISTOR
NSN, MFG P/N
5961012720220
NSN
5961-01-272-0220
MFG
SONICOR INC.
Description
DESIGN CONTROL REFERENCE: 800630
FEATURES PROVIDED: W/HEAT SINK
III END ITEM IDENTIFICATION: 4940-01-180-3217,MOBILE ULTRASONIC CLEANER; MSC-900T11/21
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 31605
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: BRACKET AND UNTHREADED HOLE
SPECIAL FEATURES: TWO REQUIRED
THE MANUFACTURERS DATA:
Related Searches:
2SD1163A
TRANSISTOR
NSN, MFG P/N
5961012720325
NSN
5961-01-272-0325
MFG
MATSUSHITA ELECTRIC CORP OF AMERICA M/S 7H-4
Description
TRANSISTOR
Related Searches:
443-112
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012720326
NSN
5961-01-272-0326
MFG
B.C. SYSTEMS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
J271
TRANSISTOR
NSN, MFG P/N
5961012721243
NSN
5961-01-272-1243
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 6.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.310 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
NF5102
TRANSISTOR
NSN, MFG P/N
5961012721244
NSN
5961-01-272-1244
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
TRANSISTOR
Related Searches:
557845
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012721245
NSN
5961-01-272-1245
MFG
THALES COMMUNICATIONS S.A.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
M02620A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012721245
NSN
5961-01-272-1245
MFG
SKYWORKS SOLUTIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2SC1226A-Q
TRANSISTOR
NSN, MFG P/N
5961012721464
NSN
5961-01-272-1464
MFG
MATSUSHITA ELECTRIC CORP OF AMERICA M/S 7H-4
Description
CURRENT RATING PER CHARACTERISTIC: 0.60 AMPERES MAXIMUM BASE CURRENT, DC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-202
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 10.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 21.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 4.6 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.531 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED
Related Searches:
187696-3
TRANSISTOR
NSN, MFG P/N
5961012721466
NSN
5961-01-272-1466
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.016 INCHES MINIMUM AND 0.019 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS AND 0.8 WATTS MINIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: EXTENDED LEAD LENGTH; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.199 INCHES MINIMUM AND 0.201 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MINIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
