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5961-01-451-7460
20 Products
MRF157
TRANSISTOR
NSN, MFG P/N
5961014517460
NSN
5961-01-451-7460
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES MAXIMUM DRAIN CURRENT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: 368-03, STYLE 2
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
JANTX1N5822
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014517897
NSN
5961-01-451-7897
JANTX1N5822
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014517897
NSN
5961-01-451-7897
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5822
III END ITEM IDENTIFICATION: STORAGE UNIT E/I FSCM 81349
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/620B
SPEC/STD CONTROLLING DATA:
Related Searches:
CD860
TRANSISTOR
NSN, MFG P/N
5961014518349
NSN
5961-01-451-8349
MFG
CRYSTALONICS INC.
Description
MOUNTING METHOD: TERMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
44C256833P111
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014519923
NSN
5961-01-451-9923
44C256833P111
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014519923
NSN
5961-01-451-9923
MFG
BAE SYSTEMS CONTROLS INC.
Description
III END ITEM IDENTIFICATION: CIRCUIT CARD, 44C359630G2, LOCKHEED MARTIN CORP
Related Searches:
DB0019
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014520006
NSN
5961-01-452-0006
MFG
GSE HOLDINGS INC. DBA ITW MILITARY GSE DIV ITW MILITARY GSE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
KG0020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014520008
NSN
5961-01-452-0008
MFG
GSE HOLDINGS INC. DBA ITW MILITARY GSE DIV ITW MILITARY GSE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
X349260G61
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014521946
NSN
5961-01-452-1946
X349260G61
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014521946
NSN
5961-01-452-1946
MFG
POWEREX INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
13459030-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014523585
NSN
5961-01-452-3585
13459030-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014523585
NSN
5961-01-452-3585
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
III END ITEM IDENTIFICATION: 1430-01-420-8077 E/I FSCM 18876
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 8.55 MILLIMETERS MINIMUM AND 8.75 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL SEMICONDUCTOR
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CA3046M
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014523585
NSN
5961-01-452-3585
CA3046M
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014523585
NSN
5961-01-452-3585
MFG
INTERSIL CORPORATION
Description
COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
III END ITEM IDENTIFICATION: 1430-01-420-8077 E/I FSCM 18876
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 8.55 MILLIMETERS MINIMUM AND 8.75 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL SEMICONDUCTOR
Related Searches:
T6020103004DN
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014523979
NSN
5961-01-452-3979
T6020103004DN
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014523979
NSN
5961-01-452-3979
MFG
POWEREX INC
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
C137PB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014524200
NSN
5961-01-452-4200
MFG
SOLID STATE INC
Description
III END ITEM IDENTIFICATION: RECEIVER TRAN E/I FSCM 09205
Related Searches:
R6201040
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014524207
NSN
5961-01-452-4207
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES NOMINAL REGULATOR CURRENT
DESIGN CONTROL REFERENCE: R6201040
III END ITEM IDENTIFICATION: CONTROL PANEL, PART NUMBER 4239-20399 ABOARD 420 FT WAGB COAST GUARD VESSELS
MANUFACTURERS CODE: 66844
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL REGULATOR VOLTAGE
Related Searches:
TGL41-15A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014524353
NSN
5961-01-452-4353
MFG
GENERAL SEMICONDUCTOR INC
Description
III END ITEM IDENTIFICATION: SDV MOD1 0AS
Related Searches:
1N4549A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014525021
NSN
5961-01-452-5021
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 3.20 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.9 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
BA483
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014525478
NSN
5961-01-452-5478
MFG
PHILIPS SEMICONDUCTORS INC
Description
III END ITEM IDENTIFICATION: 6625-01-408-8129
Related Searches:
357-0050
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014526369
NSN
5961-01-452-6369
357-0050
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014526369
NSN
5961-01-452-6369
MFG
ONAN CORPORATION DBA CUMMINS POWER GENERATION
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
1906-0334
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014526462
NSN
5961-01-452-6462
1906-0334
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014526462
NSN
5961-01-452-6462
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
III END ITEM IDENTIFICATION: 6625014318251 E/I FSCM 28480
INCLOSURE MATERIAL: PLASTIC
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
3K49
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014526462
NSN
5961-01-452-6462
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
III END ITEM IDENTIFICATION: 6625014318251 E/I FSCM 28480
INCLOSURE MATERIAL: PLASTIC
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
1906-0375
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014526482
NSN
5961-01-452-6482
1906-0375
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014526482
NSN
5961-01-452-6482
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
III END ITEM IDENTIFICATION: 6625014318251 E/I FSCM 28480
INCLOSURE MATERIAL: PLASTIC
Related Searches:
MMAD1107R1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014526482
NSN
5961-01-452-6482
MMAD1107R1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014526482
NSN
5961-01-452-6482
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: 6625014318251 E/I FSCM 28480
INCLOSURE MATERIAL: PLASTIC
