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5961-01-273-6770

20 Products

2914688-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012736770

NSN

5961-01-273-6770

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2914688-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012736770

NSN

5961-01-273-6770

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1300.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 1500.0 NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: 0.0 TO 150.0 DEG CELSIUS
SPECIAL FEATURES: ENVIRONMENTAL PROTECTION:MOISTURE;MAX ABSOLUTE POWER RATING:10.0;TEMP IN DEG CELSIUS,POWER RATING:25.0;INCLOSURE FEATURE:HERMETICALLY SEALED
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD W/TERMINAL LUG AND 3 INSULATED WIRE LEAD W/TERMINAL LUG

019-005541-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012737183

NSN

5961-01-273-7183

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019-005541-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012737183

NSN

5961-01-273-7183

MFG

MONADNOCK COMPANY THE DBA LISI AEROSPACE

019-005853-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012737183

NSN

5961-01-273-7183

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019-005853-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012737183

NSN

5961-01-273-7183

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE

MV7287

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012737183

NSN

5961-01-273-7183

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MV7287

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012737183

NSN

5961-01-273-7183

MFG

MICROSEMI CORPORATION

1 127 328 003

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961012737624

NSN

5961-01-273-7624

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1 127 328 003

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961012737624

NSN

5961-01-273-7624

MFG

BOSCH ROBERT CORP

585R320H03

TRANSISTOR

NSN, MFG P/N

5961012738016

NSN

5961-01-273-8016

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585R320H03

TRANSISTOR

NSN, MFG P/N

5961012738016

NSN

5961-01-273-8016

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 12.00 AMPERES MAXIMUM EMITTER CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: BRACKET AND UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

7909262-00

TRANSISTOR

NSN, MFG P/N

5961012738016

NSN

5961-01-273-8016

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7909262-00

TRANSISTOR

NSN, MFG P/N

5961012738016

NSN

5961-01-273-8016

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 12.00 AMPERES MAXIMUM EMITTER CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: BRACKET AND UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

NSP2103

TRANSISTOR

NSN, MFG P/N

5961012738016

NSN

5961-01-273-8016

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NSP2103

TRANSISTOR

NSN, MFG P/N

5961012738016

NSN

5961-01-273-8016

MFG

MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 12.00 AMPERES MAXIMUM EMITTER CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: BRACKET AND UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

PP8281

TRANSISTOR

NSN, MFG P/N

5961012738016

NSN

5961-01-273-8016

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PP8281

TRANSISTOR

NSN, MFG P/N

5961012738016

NSN

5961-01-273-8016

MFG

MICROSEMI PPC INC

Description

CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 12.00 AMPERES MAXIMUM EMITTER CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: BRACKET AND UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

JANTXV1N6462

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012738019

NSN

5961-01-273-8019

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JANTXV1N6462

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012738019

NSN

5961-01-273-8019

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N6462
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/551
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/551 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.5 MINIMUM BREAKDOWN VOLTAGE, DC

405825

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961012738731

NSN

5961-01-273-8731

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405825

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961012738731

NSN

5961-01-273-8731

MFG

HOBART BROS CO

0019195

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012738755

NSN

5961-01-273-8755

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0019195

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012738755

NSN

5961-01-273-8755

MFG

GOOD-ALL ELECTRIC INC DIV OF VALMONT INDUSTRIES

202507

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012738756

NSN

5961-01-273-8756

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202507

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012738756

NSN

5961-01-273-8756

MFG

WOODWARD GOVERNOR COMPANY DBA INDUSTRIAL PRODUCTS GROUP DIV INDUSTRIAL PRODUCTS GROUP

800422

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012740915

NSN

5961-01-274-0915

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800422

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012740915

NSN

5961-01-274-0915

MFG

SONICOR INC.

Description

DESIGN CONTROL REFERENCE: 800422
MANUFACTURERS CODE: 31605
SPECIAL FEATURES: ZENER DIODE; USED W/MOBILE ULTRASONIC CLEANER; MDL. MSC 900T-11/21
THE MANUFACTURERS DATA:

05P00050-0230

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012741013

NSN

5961-01-274-1013

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05P00050-0230

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012741013

NSN

5961-01-274-1013

MFG

MAGNETEK INC INDUSTRIAL CONTROLS GROUP DIV DBA MAGNETEK

20-40-X-X-00

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012741013

NSN

5961-01-274-1013

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20-40-X-X-00

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012741013

NSN

5961-01-274-1013

MFG

POWEREX INC

05P00050-0308

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012741014

NSN

5961-01-274-1014

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05P00050-0308

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012741014

NSN

5961-01-274-1014

MFG

MAGNETEK INC INDUSTRIAL CONTROLS GROUP DIV DBA MAGNETEK

120455-00

TRANSISTOR

NSN, MFG P/N

5961012741112

NSN

5961-01-274-1112

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120455-00

TRANSISTOR

NSN, MFG P/N

5961012741112

NSN

5961-01-274-1112

MFG

TELEVIDEO SYSTEMS INC

2N4401

TRANSISTOR

NSN, MFG P/N

5961012741112

NSN

5961-01-274-1112

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2N4401

TRANSISTOR

NSN, MFG P/N

5961012741112

NSN

5961-01-274-1112

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

120475-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012741113

NSN

5961-01-274-1113

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120475-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012741113

NSN

5961-01-274-1113

MFG

TELEVIDEO SYSTEMS INC