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5961-01-273-6770
20 Products
2914688-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012736770
NSN
5961-01-273-6770
2914688-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012736770
NSN
5961-01-273-6770
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1300.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 1500.0 NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: 0.0 TO 150.0 DEG CELSIUS
SPECIAL FEATURES: ENVIRONMENTAL PROTECTION:MOISTURE;MAX ABSOLUTE POWER RATING:10.0;TEMP IN DEG CELSIUS,POWER RATING:25.0;INCLOSURE FEATURE:HERMETICALLY SEALED
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD W/TERMINAL LUG AND 3 INSULATED WIRE LEAD W/TERMINAL LUG
Related Searches:
019-005541-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012737183
NSN
5961-01-273-7183
019-005541-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012737183
NSN
5961-01-273-7183
MFG
MONADNOCK COMPANY THE DBA LISI AEROSPACE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
019-005853-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012737183
NSN
5961-01-273-7183
019-005853-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012737183
NSN
5961-01-273-7183
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MV7287
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012737183
NSN
5961-01-273-7183
MFG
MICROSEMI CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1 127 328 003
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012737624
NSN
5961-01-273-7624
1 127 328 003
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012737624
NSN
5961-01-273-7624
MFG
BOSCH ROBERT CORP
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
585R320H03
TRANSISTOR
NSN, MFG P/N
5961012738016
NSN
5961-01-273-8016
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 12.00 AMPERES MAXIMUM EMITTER CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: BRACKET AND UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
7909262-00
TRANSISTOR
NSN, MFG P/N
5961012738016
NSN
5961-01-273-8016
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 12.00 AMPERES MAXIMUM EMITTER CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: BRACKET AND UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
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NSP2103
TRANSISTOR
NSN, MFG P/N
5961012738016
NSN
5961-01-273-8016
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 12.00 AMPERES MAXIMUM EMITTER CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: BRACKET AND UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
PP8281
TRANSISTOR
NSN, MFG P/N
5961012738016
NSN
5961-01-273-8016
MFG
MICROSEMI PPC INC
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 12.00 AMPERES MAXIMUM EMITTER CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: BRACKET AND UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
JANTXV1N6462
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012738019
NSN
5961-01-273-8019
JANTXV1N6462
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012738019
NSN
5961-01-273-8019
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N6462
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/551
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/551 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.5 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
405825
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012738731
NSN
5961-01-273-8731
405825
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012738731
NSN
5961-01-273-8731
MFG
HOBART BROS CO
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
0019195
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012738755
NSN
5961-01-273-8755
MFG
GOOD-ALL ELECTRIC INC DIV OF VALMONT INDUSTRIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
202507
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012738756
NSN
5961-01-273-8756
MFG
WOODWARD GOVERNOR COMPANY DBA INDUSTRIAL PRODUCTS GROUP DIV INDUSTRIAL PRODUCTS GROUP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
800422
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012740915
NSN
5961-01-274-0915
MFG
SONICOR INC.
Description
DESIGN CONTROL REFERENCE: 800422
MANUFACTURERS CODE: 31605
SPECIAL FEATURES: ZENER DIODE; USED W/MOBILE ULTRASONIC CLEANER; MDL. MSC 900T-11/21
THE MANUFACTURERS DATA:
Related Searches:
05P00050-0230
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012741013
NSN
5961-01-274-1013
05P00050-0230
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012741013
NSN
5961-01-274-1013
MFG
MAGNETEK INC INDUSTRIAL CONTROLS GROUP DIV DBA MAGNETEK
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
20-40-X-X-00
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012741013
NSN
5961-01-274-1013
20-40-X-X-00
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012741013
NSN
5961-01-274-1013
MFG
POWEREX INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
05P00050-0308
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012741014
NSN
5961-01-274-1014
05P00050-0308
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012741014
NSN
5961-01-274-1014
MFG
MAGNETEK INC INDUSTRIAL CONTROLS GROUP DIV DBA MAGNETEK
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
120455-00
TRANSISTOR
NSN, MFG P/N
5961012741112
NSN
5961-01-274-1112
MFG
TELEVIDEO SYSTEMS INC
Description
TRANSISTOR
Related Searches:
2N4401
TRANSISTOR
NSN, MFG P/N
5961012741112
NSN
5961-01-274-1112
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
TRANSISTOR
Related Searches:
120475-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012741113
NSN
5961-01-274-1113
MFG
TELEVIDEO SYSTEMS INC
Description
SEMICONDUCTOR DEVICE,DIODE
