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5961-01-255-8752

20 Products

430604

TRANSISTOR

NSN, MFG P/N

5961012558752

NSN

5961-01-255-8752

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430604

TRANSISTOR

NSN, MFG P/N

5961012558752

NSN

5961-01-255-8752

MFG

TELEMECHANICS INC

29034-1

TRANSISTOR

NSN, MFG P/N

5961012558753

NSN

5961-01-255-8753

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29034-1

TRANSISTOR

NSN, MFG P/N

5961012558753

NSN

5961-01-255-8753

MFG

ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.305 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.141 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 750.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMIT

1N6622

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012558975

NSN

5961-01-255-8975

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1N6622

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012558975

NSN

5961-01-255-8975

MFG

MICRO USPD INC

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.102 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 1.3 MAXIMUM FORWARD VOLTAGE, DC

3370010P

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012558975

NSN

5961-01-255-8975

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3370010P

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012558975

NSN

5961-01-255-8975

MFG

PECO II INC.

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.102 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 1.3 MAXIMUM FORWARD VOLTAGE, DC

90001A1946

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012558975

NSN

5961-01-255-8975

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90001A1946

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012558975

NSN

5961-01-255-8975

MFG

MARINE CORPS LOGISTICS COMMAND TECHNICAL DATA REPOSITORY CUSTOMER SERVICE-MICC LOGISTICS OPERATIONS CENTER

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.102 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 1.3 MAXIMUM FORWARD VOLTAGE, DC

BYV26C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012558975

NSN

5961-01-255-8975

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BYV26C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012558975

NSN

5961-01-255-8975

MFG

PHILIPS CIRCUIT ASSEMBLIES

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.102 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 1.3 MAXIMUM FORWARD VOLTAGE, DC

FBL00-223

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012558975

NSN

5961-01-255-8975

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FBL00-223

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012558975

NSN

5961-01-255-8975

MFG

VEECO INSTRUMENTS INC LAMBDA DIV

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.102 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 1.3 MAXIMUM FORWARD VOLTAGE, DC

1N1127R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012558977

NSN

5961-01-255-8977

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1N1127R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012558977

NSN

5961-01-255-8977

MFG

ST-SEMICON INC

31715-ZA0-813

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012560253

NSN

5961-01-256-0253

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31715-ZA0-813

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012560253

NSN

5961-01-256-0253

MFG

DLA LAND AND MARITIME

0N512193-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012561739

NSN

5961-01-256-1739

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0N512193-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012561739

NSN

5961-01-256-1739

MFG

NATIONAL SECURITY AGENCY

2395245G1

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961012562485

NSN

5961-01-256-2485

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2395245G1

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961012562485

NSN

5961-01-256-2485

MFG

ITT CORPORATION

Description

MAJOR COMPONENTS: PRINTED WIRING BOARD 1,TWO 2N2432 TRANSISTORS AND ONE 2N706 TRANSISTOR

1N3494R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012563143

NSN

5961-01-256-3143

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1N3494R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012563143

NSN

5961-01-256-3143

MFG

MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-21
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.640 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.076 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N3661R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012563143

NSN

5961-01-256-3143

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1N3661R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012563143

NSN

5961-01-256-3143

MFG

COOPER INDUSTRIES INC CHAMPION AVIATION PRODUCTS

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-21
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.640 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.076 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N3663R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012563143

NSN

5961-01-256-3143

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1N3663R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012563143

NSN

5961-01-256-3143

MFG

LIMA ELECTRIC CO INC THE

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-21
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.640 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.076 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

78-8477-1044-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012563143

NSN

5961-01-256-3143

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78-8477-1044-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012563143

NSN

5961-01-256-3143

MFG

3M COMPANY DBA 3M DIV GOVERNMENT MARKETS

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-21
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.640 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.076 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

8400504

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012563143

NSN

5961-01-256-3143

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8400504

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012563143

NSN

5961-01-256-3143

MFG

DLA LAND AND MARITIME

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-21
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.640 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.076 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

S6460NF

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012563143

NSN

5961-01-256-3143

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S6460NF

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012563143

NSN

5961-01-256-3143

MFG

ST-SEMICON INC

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-21
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.640 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.076 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

SR1112R4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012563143

NSN

5961-01-256-3143

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SR1112R4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012563143

NSN

5961-01-256-3143

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-21
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.640 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.076 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

JANTX1N6312

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012563144

NSN

5961-01-256-3144

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JANTX1N6312

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012563144

NSN

5961-01-256-3144

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CAPACITANCE RATING IN PICOFARADS: 1650.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 128.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6312
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/533
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/533 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATI

JANTX1N991B-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012563145

NSN

5961-01-256-3145

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JANTX1N991B-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012563145

NSN

5961-01-256-3145

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 2.20 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 2.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N991B-1
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 N