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5961-01-255-8752
20 Products
430604
TRANSISTOR
NSN, MFG P/N
5961012558752
NSN
5961-01-255-8752
MFG
TELEMECHANICS INC
Description
TRANSISTOR
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29034-1
TRANSISTOR
NSN, MFG P/N
5961012558753
NSN
5961-01-255-8753
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.305 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.141 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 750.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMIT
Related Searches:
1N6622
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012558975
NSN
5961-01-255-8975
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.102 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 1.3 MAXIMUM FORWARD VOLTAGE, DC
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3370010P
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012558975
NSN
5961-01-255-8975
MFG
PECO II INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.102 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 1.3 MAXIMUM FORWARD VOLTAGE, DC
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90001A1946
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012558975
NSN
5961-01-255-8975
90001A1946
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012558975
NSN
5961-01-255-8975
MFG
MARINE CORPS LOGISTICS COMMAND TECHNICAL DATA REPOSITORY CUSTOMER SERVICE-MICC LOGISTICS OPERATIONS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.102 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 1.3 MAXIMUM FORWARD VOLTAGE, DC
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BYV26C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012558975
NSN
5961-01-255-8975
MFG
PHILIPS CIRCUIT ASSEMBLIES
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.102 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 1.3 MAXIMUM FORWARD VOLTAGE, DC
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FBL00-223
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012558975
NSN
5961-01-255-8975
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.102 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 1.3 MAXIMUM FORWARD VOLTAGE, DC
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1N1127R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012558977
NSN
5961-01-255-8977
MFG
ST-SEMICON INC
Description
SEMICONDUCTOR DEVICE,DIODE
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31715-ZA0-813
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012560253
NSN
5961-01-256-0253
31715-ZA0-813
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012560253
NSN
5961-01-256-0253
MFG
DLA LAND AND MARITIME
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
0N512193-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012561739
NSN
5961-01-256-1739
0N512193-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012561739
NSN
5961-01-256-1739
MFG
NATIONAL SECURITY AGENCY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2395245G1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012562485
NSN
5961-01-256-2485
2395245G1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012562485
NSN
5961-01-256-2485
MFG
ITT CORPORATION
Description
MAJOR COMPONENTS: PRINTED WIRING BOARD 1,TWO 2N2432 TRANSISTORS AND ONE 2N706 TRANSISTOR
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1N3494R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012563143
NSN
5961-01-256-3143
MFG
MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-21
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.640 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.076 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
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1N3661R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012563143
NSN
5961-01-256-3143
MFG
COOPER INDUSTRIES INC CHAMPION AVIATION PRODUCTS
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-21
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.640 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.076 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
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1N3663R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012563143
NSN
5961-01-256-3143
MFG
LIMA ELECTRIC CO INC THE
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-21
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.640 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.076 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
78-8477-1044-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012563143
NSN
5961-01-256-3143
78-8477-1044-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012563143
NSN
5961-01-256-3143
MFG
3M COMPANY DBA 3M DIV GOVERNMENT MARKETS
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-21
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.640 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.076 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
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8400504
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012563143
NSN
5961-01-256-3143
MFG
DLA LAND AND MARITIME
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-21
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.640 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.076 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
S6460NF
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012563143
NSN
5961-01-256-3143
MFG
ST-SEMICON INC
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-21
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.640 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.076 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
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SR1112R4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012563143
NSN
5961-01-256-3143
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-21
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.640 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.076 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
JANTX1N6312
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012563144
NSN
5961-01-256-3144
JANTX1N6312
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012563144
NSN
5961-01-256-3144
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CAPACITANCE RATING IN PICOFARADS: 1650.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 128.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6312
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/533
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/533 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATI
Related Searches:
JANTX1N991B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012563145
NSN
5961-01-256-3145
JANTX1N991B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012563145
NSN
5961-01-256-3145
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 2.20 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 2.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N991B-1
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 N