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5961-00-762-3073

20 Products

1N3492

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623073

NSN

5961-00-762-3073

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1N3492

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623073

NSN

5961-00-762-3073

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3397 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.365 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

11065269-001

TRANSISTOR

NSN, MFG P/N

5961007622675

NSN

5961-00-762-2675

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11065269-001

TRANSISTOR

NSN, MFG P/N

5961007622675

NSN

5961-00-762-2675

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 21.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -32.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE, WITH BASE SHORT-CIRCUITED TO EMITTER AND -10.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

2N301

TRANSISTOR

NSN, MFG P/N

5961007622675

NSN

5961-00-762-2675

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2N301

TRANSISTOR

NSN, MFG P/N

5961007622675

NSN

5961-00-762-2675

MFG

ITT SEMICONDUCTORS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 21.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -32.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE, WITH BASE SHORT-CIRCUITED TO EMITTER AND -10.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

11065270-001

TRANSISTOR

NSN, MFG P/N

5961007622676

NSN

5961-00-762-2676

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11065270-001

TRANSISTOR

NSN, MFG P/N

5961007622676

NSN

5961-00-762-2676

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 105.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 50.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

2N398

TRANSISTOR

NSN, MFG P/N

5961007622676

NSN

5961-00-762-2676

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2N398

TRANSISTOR

NSN, MFG P/N

5961007622676

NSN

5961-00-762-2676

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 105.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 50.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

11065331-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007622682

NSN

5961-00-762-2682

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11065331-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007622682

NSN

5961-00-762-2682

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 1.10 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.285 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

HC69

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007622682

NSN

5961-00-762-2682

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HC69

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007622682

NSN

5961-00-762-2682

MFG

SOLITRON DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 1.10 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.285 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

C11U

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623059

NSN

5961-00-762-3059

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C11U

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623059

NSN

5961-00-762-3059

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN

Description

DESIGN CONTROL REFERENCE: C11U
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 09214
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD W/TERMINAL LUG AND 1 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

1901-0343

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623068

NSN

5961-00-762-3068

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1901-0343

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623068

NSN

5961-00-762-3068

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3397 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.365 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N3491R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623068

NSN

5961-00-762-3068

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1N3491R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623068

NSN

5961-00-762-3068

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3397 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.365 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK

5257-132

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623068

NSN

5961-00-762-3068

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5257-132

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623068

NSN

5961-00-762-3068

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3397 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.365 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK

556118-177

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623068

NSN

5961-00-762-3068

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556118-177

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623068

NSN

5961-00-762-3068

MFG

SINGER CO THE INSTRUMENTATION DIV

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3397 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.365 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK

MR322R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623068

NSN

5961-00-762-3068

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MR322R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623068

NSN

5961-00-762-3068

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3397 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.365 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N3493

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623073

NSN

5961-00-762-3073

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1N3493

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623073

NSN

5961-00-762-3073

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3397 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.365 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

204541-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623073

NSN

5961-00-762-3073

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204541-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623073

NSN

5961-00-762-3073

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3397 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.365 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

343-214-017

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623073

NSN

5961-00-762-3073

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343-214-017

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623073

NSN

5961-00-762-3073

MFG

INTERSTATE ELECTRONICS CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3397 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.365 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

52-31

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623073

NSN

5961-00-762-3073

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52-31

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623073

NSN

5961-00-762-3073

MFG

ASSOCIATED EQUIPMENT CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3397 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.365 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

5961007623073

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623073

NSN

5961-00-762-3073

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5961007623073

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623073

NSN

5961-00-762-3073

MFG

E.C.A ETABLISSEMENT CENTRAL DES APPROVISIONNEMENTS DES FORCES ARMEES

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3397 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.365 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

615-004-9003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623073

NSN

5961-00-762-3073

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615-004-9003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623073

NSN

5961-00-762-3073

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - TORRANCE

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3397 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.365 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

7299783

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623073

NSN

5961-00-762-3073

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7299783

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007623073

NSN

5961-00-762-3073

MFG

GENERAL MOTORS CORP DELCO ELECTRONICS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3397 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.365 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK