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5961-01-248-3924
20 Products
10193114-01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012483924
NSN
5961-01-248-3924
10193114-01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012483924
NSN
5961-01-248-3924
MFG
LITTON NETWORK ACCESS SYSTEMS LITTON ACQUIRED BY NORTHROP GRUMMAN FACILITY CLOSED
Description
CURRENT RATING PER CHARACTERISTIC: 180.00 AMPERES MAXIMUM PEAK PULSE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
DESIGN CONTROL REFERENCE: 10193114-01
MANUFACTURERS CODE: 62787
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 2.650 INCHES NOMINAL
OVERALL WIDTH: 1.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 15000.0 WATTS MAXIMUM PEAK PULSE OUTPUT POWER ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG OR 2 TURRET
TEST DATA DOCUMENT: 53711-6190219 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MINIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 200.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE
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199645
RECTIFIER ASSEMBLY
NSN, MFG P/N
5961012480573
NSN
5961-01-248-0573
MFG
CHARLES STARK DRAPER LABORATORY INC THE DBA DRAPER LABORATORY DIV HEADQUARTERS
Description
DESIGN CONTROL REFERENCE: 199645
MANUFACTURERS CODE: 51993
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURE
SPECIAL TEST FEATURES: CRITICAL ITEM FOR SAFETY AND SURVIVAL OF DEEP SUBMERGENCE RESEARCH AND RESCUE VEHICLES
Related Searches:
14421
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012480753
NSN
5961-01-248-0753
MFG
KURZ & ROOT GENERATOR COMPANY LLC
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
16085-25
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012480782
NSN
5961-01-248-0782
MFG
KURZ & ROOT GENERATOR COMPANY LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
16085-14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012480783
NSN
5961-01-248-0783
MFG
KURZ & ROOT GENERATOR COMPANY LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
401606-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012480784
NSN
5961-01-248-0784
401606-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012480784
NSN
5961-01-248-0784
MFG
ENGINEERED ELECTRIC COMPANY DBA DRS FERMONT
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
16085-13
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012480785
NSN
5961-01-248-0785
MFG
KURZ & ROOT GENERATOR COMPANY LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
593735
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012481644
NSN
5961-01-248-1644
MFG
EASTMAN KODAK COMPANY DBA KODAK
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
593734
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012481645
NSN
5961-01-248-1645
MFG
EASTMAN KODAK COMPANY DBA KODAK
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
777079-0A
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012481712
NSN
5961-01-248-1712
777079-0A
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012481712
NSN
5961-01-248-1712
MFG
MARATHON ELECTRIC MANUFACTURING CORPORATION
Description
MAJOR COMPONENTS: MTG PLATE 1; DIODE SR3577 3; DIODE SR3577R 3; SCREW BINDER 3; SCREW HEX HD 2; LOCK WASHER 2; LEAD WIRE 2
Related Searches:
778600-0A
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012481712
NSN
5961-01-248-1712
778600-0A
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012481712
NSN
5961-01-248-1712
MFG
LIMA ELECTRIC CO INC THE
Description
MAJOR COMPONENTS: MTG PLATE 1; DIODE SR3577 3; DIODE SR3577R 3; SCREW BINDER 3; SCREW HEX HD 2; LOCK WASHER 2; LEAD WIRE 2
Related Searches:
2N6800
TRANSISTOR
NSN, MFG P/N
5961012481923
NSN
5961-01-248-1923
MFG
JOINT ELECTRON DEVICE ENGINEERING COUNCIL
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM DRAIN CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6800
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-205AF
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/557
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/557 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
JANTX2N6800
TRANSISTOR
NSN, MFG P/N
5961012481923
NSN
5961-01-248-1923
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM DRAIN CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6800
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-205AF
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/557
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/557 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
JANTXV1N5611
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012481925
NSN
5961-01-248-1925
JANTXV1N5611
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012481925
NSN
5961-01-248-1925
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N5611
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/434
OVERALL DIAMETER: 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/434 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 43.7 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
3326444
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012481926
NSN
5961-01-248-1926
MFG
HONEYWELL INTERNATIONAL INC . DBA HONEYWELL DIV AEROSPACE - TEMPE WEST WARNER ROAD
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6116A
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/516 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTI
Related Searches:
JANTX1N6116A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012481926
NSN
5961-01-248-1926
JANTX1N6116A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012481926
NSN
5961-01-248-1926
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6116A
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/516 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTI
Related Searches:
MV6258
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012481926
NSN
5961-01-248-1926
MFG
MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6116A
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/516 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTI
Related Searches:
3030001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012481928
NSN
5961-01-248-1928
3030001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012481928
NSN
5961-01-248-1928
MFG
M P D TECHNOLOGIES INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
Related Searches:
KBPC35-02
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012481928
NSN
5961-01-248-1928
KBPC35-02
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012481928
NSN
5961-01-248-1928
MFG
GENERAL SEMICONDUCTOR INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
Related Searches:
102369-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012483924
NSN
5961-01-248-3924
102369-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012483924
NSN
5961-01-248-3924
MFG
EDO RECONNAISSANCE AND SURVEILLANCE SYSTEMS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 180.00 AMPERES MAXIMUM PEAK PULSE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
DESIGN CONTROL REFERENCE: 10193114-01
MANUFACTURERS CODE: 62787
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 2.650 INCHES NOMINAL
OVERALL WIDTH: 1.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 15000.0 WATTS MAXIMUM PEAK PULSE OUTPUT POWER ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG OR 2 TURRET
TEST DATA DOCUMENT: 53711-6190219 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MINIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 200.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE
